1N1188 JANTXV Search Results

1N1184

Abstract: part marking Ht1 DO-203AB Package 1N3768
Contextual Info: 1N1184, 1N1186, 1N1188, 1N1190, 1N3766 and 1N3768 R Available on commercial versions High Reliability Silicon Power Rectifier Qualified per MIL-PRF-19500/297 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This series of silicon power rectifier part numbers are qualified up to the JANTXV level for high

Contextual Info: 1N1188+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)140# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)35 @Temp. (øC) (Test Condition)140

DO-203AB Package

Abstract: 1N1190 1N1184 1N1186 1N1190 JANTXV 1N3768
Contextual Info: 1N1184, 1N1186, 1N1188, 1N1190, 1N3766 and 1N3768 R Available on commercial versions High Reliability Silicon Power Rectifier Qualified per MIL-PRF-19500/297 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This series of silicon power rectifier part numbers are qualified up to the JANTXV level for high

UNF-28

Abstract: 1N1184 JANTXV 1N1186 datasheet 1N1186 1N1190 JANTX diode 1N1188 FED-STD-H28 1N3768 1N1188 1N1188 JANTXV
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SILICON POWER RECTIFIER Qualified per MIL-PRF-19500/297 • Glass Passivated Die • 500 Amps Surge Rating

1N1190 JANTX

Abstract: 1N1184 1N1186 1N3768 1N3766 1N3768 JANTX JANTXV 1N1186 datasheet 1N1184R 1N1186R 1N1188
Contextual Info: A Hi-Reliability Semiconductor Manufacturer Home Distributors Employment Information home | help | email Medium Power Rectifiers 35 Amps Military Product Products Quality Quote Request 1N1184 - 1N1190 / 1N3766 - 1N3768 Value Added E-mail DO203AB DO5 Available in JAN, JANTX and JANTXV

vqe 24 d

Abstract: VQE 24 vqe 24 e JANTXV 1N1186 datasheet VQE 13 diode 1N3766R VQE 12 we vqe 24 d datasheet cd 4011 free 1N1188
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 November 1999. INCH-POUND MIL-PRF-19500/297C 4 August 1999 SUPERSEDING MIL-S-19500/297B 30 Mar 1989 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

1N3768

Contextual Info: Milite ry Silicon Power Rectifier 1N1184—1M1190, 1N 3766-1N3768 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes UL Notes: 1. 1 /4 - 2 8 UNF-3A 2. Full threads within 2 1 /2 threads 3. For Reverse P olarity odd R to P art Number Standard Polarity; Stud is

1N1184

Abstract: 1N1184R 1N1186 1N1186R 1N1188 1N1188R 1N1190 1N1190R 1N3766 1N3766R
Contextual Info: Dim. Inches M illimeter Minimum Maximum Minimum Maximum Notes 1 Jh U r-UJ U, _ L G Ì F > Notes: 1. 1 / 4 - 2 8 UNF-3A 2. Full threads within 2 1 /2 threads 3. Standard Polarity. Stud is Cathode Reverse Polarity: Stud is Anode A B C D E F G H J K M N P 1 .667

21135

Abstract: DO21 ST3010A DO-21 1N3659
Contextual Info: Microsemi Standard Recovery Rectifiers Part Number REC 1N2160 1N1434 1N3659 : 1N1435 1N3660 ST3010 ST3010A 1N1436 i 1N3661 ! ST3020 ST3020A : 1N1437 1N3B63 ST3040 ST3040A 1N1438 ST3060 ! ST3060A ST3080 ST3080A i ST30100 ; ST30100A i 1N1186 1N4525 I R3520PF

1N1184

Abstract: 1N1184R 1N1186 1N1186R 1N1188 1N1188R 1N1190 1N1190R 1N3766 1N3768
Contextual Info: Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 / 4 - 2 8 U N F -3 A 2. Full th re ad s within 2 1 /2 threads 3. Standard Polarity; Stud is Cathode Reverse P olarity: Stud is Anode J_F L Ì A B C D E F G H J K M N P 1 .667 -.422

DIODE 1N3768-R

Abstract: diode 1N1188 1N1184 1N1184R 1N1186 1N1186R 1N1188 1N1188R 1N1190 1N3766
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 2007. INCH-POUND MIL-PRF-19500/297G 25 July 2007 SUPERSEDING MIL-PRF-19500/297F 19 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

1N3766-1N3768

Abstract: 1N1184 1N1184R 1N1186R 1N1188 1N1188R 1N1190 1N1190R INI186
Contextual Info: Military Silicon Power Rectifier 1N1184-1N1190, 1N3766— 1N3768 Dim. In ch e s Millim eter M inim um M a xim u m M inim um M axim u m N o te s Notes: 1. 1 / 4 - 2 8 U N F - 3 A 2. Full t h re a d s within 2 1 / 2 th re a d s 3* For R e v e rse P o larity add F

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no