Untitled
Abstract: No abstract text available
Text: 1N1190+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)140# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)35 @Temp. (øC) (Test Condition)140
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1N1190
Current35
Voltage600
Current10m
StyleDO-203AB
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Untitled
Abstract: No abstract text available
Text: 1N1190+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)140# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)35 @Temp. (øC) (Test Condition)140
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1N1190
Current35
Voltage600
Current10m
StyleDO-203AB
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Untitled
Abstract: No abstract text available
Text: 1N1190+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)140# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)35 @Temp. (øC) (Test Condition)140
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1N1190
Current35
Voltage600
Current10m
StyleDO-203AB
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1N3768
Abstract: No abstract text available
Text: 1N1183 R THRU 1N3768(R) DACO SEMICONDUCTOR CO., LTD. STANDARD RECOVERY DIODES STUD TYPE 35A Features High Surge Capability 35Amp Rectifier 50-1000 Volts Types up to 1000V V RRM DO-5 Maximum Ratings Operating Temperature: -65 C to +190 B Storage Temperature: -65 C to +175
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1N1183
1N3768
35Amp
1N1184
1N1186
1N1187
1N1188
1N1189
1N1190
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1N1183(R)
Abstract: 1N3768
Text: 1N1183 R T HR U 1N3768(R) DACO SEMICONDUCTOR CO., LTD. STANDARD RECOVERY DIODE STUD TYPES Features 35Amp Rectifier 50-1000 Volts High Surge Capability Types Up to 1000V V RRM DO-5 Maximum Ratings Operating Temperature: Storage Temperature: Part Number 1N1183(R)
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1N1183
1N3768
35Amp
1N1184
1N1186
1N1188
1N1189
1N1190
1N3765
1N1183(R)
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diode 1N1188
Abstract: 1N1189 1N1190 diode 1N1188 1N1190
Text: 1N1188 thru 1N1190R Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 35 A Features • High Surge Capability • Types up to 1000 V VRRM DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol "R" devices have leads reversed
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1N1188
1N1190R
1N1188
1N1189
1N1190
diode 1N1188
1N1189
1N1190 diode
1N1190
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Untitled
Abstract: No abstract text available
Text: 1N1188 thru 1N1190R Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 35 A Features • High Surge Capability • Types up to 1000 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.
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1N1188
1N1190R
1N1188
1N1189
1N1190
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Untitled
Abstract: No abstract text available
Text: 1N1188 thru 1N1190R Silicon Standard Recovery Diode VRRM = 400 V - 600 V IF = 35 A Features • High Surge Capability • Types from 400 to 600 V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.
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1N1188
1N1190R
1N1188
1N1189
1N1190
DO-203AB)
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Untitled
Abstract: No abstract text available
Text: 1N1188 thru 1N1190R Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 35 A Features • High Surge Capability • Types up to 1000 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.
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1N1188
1N1190R
1N1188
1N1189
1N1190
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vqe 24 d
Abstract: VQE 24 vqe 24 e JANTXV 1N1186 datasheet VQE 13 diode 1N3766R VQE 12 we vqe 24 d datasheet cd 4011 free 1N1188
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 November 1999. INCH-POUND MIL-PRF-19500/297C 4 August 1999 SUPERSEDING MIL-S-19500/297B 30 Mar 1989 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
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MIL-PRF-19500/297C
MIL-S-19500/297B
1N1184,
1N1186,
1N1188,
1N1190,
1N3766,
1N3768,
1N1184R,
1N1186R,
vqe 24 d
VQE 24
vqe 24 e
JANTXV 1N1186 datasheet
VQE 13
diode 1N3766R
VQE 12
we vqe 24 d
datasheet cd 4011 free
1N1188
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25F80
Abstract: DO-203AA 1N1189 DO-203AB 12F120 diode 12F80 diode 6F20 6F40 diode 12F10 12F20
Text: Elite Semiconductor Products | Standard Recovory Rectifiers Data Sheets and Samples Available Upon Request CLICK HERE Home | Contact Us | Bridge Rectifiers | Diodes | Fast recovery Diodes | Rectifiers Schottky Rectifiers | Standard Recovery Diodes | Thyristors | Transient Voltage | Suppressors | Triacs
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6F100
6F120
DO-203AA
12F10
12F20
12F40
12F60
12F80
12F100
12F120
25F80
DO-203AA
1N1189
DO-203AB
12F120 diode
12F80 diode
6F20
6F40 diode
12F10
12F20
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DIODE 1N3768-R
Abstract: diode 1N1188 1N1184 1N1184R 1N1186 1N1186R 1N1188 1N1188R 1N1190 1N3766
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 2007. INCH-POUND MIL-PRF-19500/297G 25 July 2007 SUPERSEDING MIL-PRF-19500/297F 19 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
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MIL-PRF-19500/297G
MIL-PRF-19500/297F
1N1184,
1N1186,
1N1188,
1N1190,
1N3766,
1N3768,
1N1184R,
1N1186R,
DIODE 1N3768-R
diode 1N1188
1N1184
1N1184R
1N1186
1N1186R
1N1188
1N1188R
1N1190
1N3766
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DO203AA
Abstract: 16CTU04 DO-203AA DO-203AA Package D2PAK-6 package 16FR60 D2PAK-6 high power fast recovery diodes 30CPH03
Text: 2013-2012:QuarkCatalogTempNew 9/20/12 4:40 PM Page 2013 25 Diodes RoHS TO-220AC TO-247AC 200 V Stock No. Mfr.’s Type @ TC °C IF(AV) (A) IR (µA) IRRM DU (µA) RTHJC DU (°C/W) trr DU (ns) VFM (V) 70079004 70079006 70079007 70079008 MUR1520PBF MUR3020WTPBF
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O-220AC
O-247AC
MUR1520PBF
MUR3020WTPBF
MUR820PBF
MURB820PBF
O-247AC
15ETH03PBF
DO203AA
16CTU04
DO-203AA
DO-203AA Package
D2PAK-6 package
16FR60
D2PAK-6
high power fast recovery diodes
30CPH03
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1N1183
Abstract: 1N1183A 1N1184A 1N1185A 1N1186A 1N2128A 1N3765 DO-203AB 1N1186RA
Text: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series RoHS • Good surge current capability up to 1000 A COMPLIANT • Can be supplied to meet stringent military, aerospace and
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1N1183,
1N3765,
1N1183A,
1N2128A
DO-203AB
1N1183A
1N2128A
1N3765
1N1183
1N1183
1N1183A
1N1184A
1N1185A
1N1186A
1N3765
DO-203AB
1N1186RA
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6AO5
Abstract: diode A14A diode a15a DO-203AB 6F40 diode al5N 85hf120 1N4004 or 1N5404 25F80 A14F
Text: Elite Semiconductor Products | Standard Recovory Diodes & Rectifiers Data Sheets and Samples Available Upon Request CLICK HERE Home | Contact Us | Bridge Rectifiers | Diodes | Fast recovery Diodes | Rectifiers Schottky Rectifiers | Standard Recovery Diodes | Thyristors | Transient Voltage | Suppressors | Triacs
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1N1183A
1N1184A
1N1185A
1N1186A
1N1187A
1N1188A
1N1189A
1N1190A
DO-203AB
1N2128A
6AO5
diode A14A
diode a15a
DO-203AB
6F40 diode
al5N
85hf120
1N4004 or 1N5404
25F80
A14F
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1N2155
Abstract: 1N249B 1N3785 1N1184 1N3786 1N3899 1N4529 1N1183A 1N1191A 1N1195A
Text: DIODE TRANSISTOR CQ,1HIC. | RECTIFIERS 20 TO 40A AMPERES JEOEC 1N248B50B 1N 1195A - 1N2154* I N 5332 1N4529* 1N1183A- 30 90A 1N38993903 1N3909* 13 1N320814 98A 60 20 25 35 35 40 20 30 20 150 145 140 115 150 100 100 110 S P E C IF IC A T IO N S IFM AV Max. average forward
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515TQR
1N248B-
1N1195A-
1N2154-
1N4529-
1N1183A-
1N3899-
1N3909-
1N3208-
1N248B
1N2155
1N249B
1N3785
1N1184
1N3786
1N3899
1N4529
1N1183A
1N1191A
1N1195A
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transistor 123
Abstract: IN376 diode 1N1188 1N249B diode 1N1184 1N248B 1N5332 1N1184 A65 DIODE 1N1191A
Text: DIODE TRANSISTOR CO INC SflMfl35E D D Q D l ^ j l D1QDE TRàni515TQR CQ.il\IC. RECTIFIERS 20 TO 40A AMPERES JEDEC 1N248B50B 1N 1195A- 1 N 2 1 5 4 - } £ ¡3 7 6 5 -6 8 1 N 4 5 2 9 - IFM AV Max. average forward current (1 phase opera tion) (A) @TC =(*C )
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1N248B-SOB
1N1195A-
1N2154.
iN3765-68
1N3S99-
1N3909
1N5332
1N3208-14
1N248B
1N1191A
transistor 123
IN376
diode 1N1188
1N249B
diode 1N1184
1N5332
1N1184
A65 DIODE
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IN1183A
Abstract: IN1183 1N1183A Series peak inverse voltage in3766 BYS50 1N2130A in3768 1N1187 byss0 BY550-1000
Text: I C SEMICONDUCTOR T 0 0 2 M 7 T O O O O O l l 013 • INC kflE D EICS Silicon rectifier diodes. 5 Amps, to 60 Amps. V A V 3 t T C ^RRM V rm (V) (A) VsM (A) M ax. F orw ard V oltage D rop at T a = 25 °C V F at 1F(AV) (V) (A) 60 60 60 60 60 60 60 300 300
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T002M7T
DO-201AD.
BY550-50
BY550-100
BYS50-200
BYS50-400
BY550-600
BY550-800
BY550-1000
183/1N3765
IN1183A
IN1183
1N1183A Series peak inverse voltage
in3766
BYS50
1N2130A
in3768
1N1187
byss0
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cecc 50000
Abstract: BYX61-200 byw88200 RECTIFIER DIODES SGS diodes byt BYX61-100 ESM244-600R BYX65-400 BYX61-400R ESM244-600
Text: /IT SGS-THOMSON * 7# GENERAL PURPOSE & INDUSTRIAL M » [i[L II g r a « § RECTIFIER DIODES «SUPERSWITCH 2» ULTRA-FAST RECOVERY RECTIFIER DIODES < 100 A I V rp m = 200, 300, 400 V Type •r W r r m Tj = 100°C trrfl t|RM Tj = 100°C >RM Tj = 100°C max
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100-C
08P-200
08P-300
08P-400
08PI-200
08PI-300
08PI-400
BYX61-100
BYX61-200
BYX61-400
cecc 50000
byw88200
RECTIFIER DIODES SGS
diodes byt
ESM244-600R
BYX65-400
BYX61-400R
ESM244-600
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1N1182
Abstract: diode 1N1188 1N1111 1N1130 1N1119 1N1184 1n1194 1N1118 1N1120 1N1124
Text: 3869720 G E N E R A L DIODE CORP 86D 00323 GENERAL DIODE CORP flb D T~ DE~ 3fiLT720 □□□□323 1 STUD MOUNTED SILICON POWER RECTIFIERS . . . cont’d i\\ \ l l\1 TYPE \ 1N1118 1N1124 ÍN1124A 400 500 600 200 200 1N1125 1N1125A ' 1N112S 1N1126A 1N1127
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1N1118
1N1119
1N1120
1N1124
N1124A
1N1125
1N1125A
1N112S
1N1126A
1N1127
1N1182
diode 1N1188
1N1111
1N1130
1N1184
1n1194
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BYV 200
Abstract: BYV 200v FZJ 101 BYX61-200 BYW 200 BYX61-400 99P-200 77P-200 BYX65-400 BYV 35 C
Text: SGS-THOMSON ^/^7#7 raoœmimMogs GENERAL PURPOSE & INDUSTRIAL RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Continued VR R M = 50,100,150, 200 V Type t rr max 35.80 ns ' r /v r r m Tj 100°C max (mA) *rr (1) max (ns) Package 1 35 TO 220
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BYW77P-
77P-100
77P-150
77P-200
77PI-150
77PI-200
BYW99P-
99P-100
99P-150ng
BYX61-100
BYV 200
BYV 200v
FZJ 101
BYX61-200
BYW 200
BYX61-400
99P-200
BYX65-400
BYV 35 C
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1N1184
Abstract: 1N1614 Diodes 1N1124A 1N1126A 1N1128A 1N1199A 1N1200A 1N1614 1N1615 1N1616
Text: 2848793 T4 » ¥ ^ 2 0 4 0 7 ^ 3 0DDDSÖ2 DIODES INCORPORATED S J~ 94D 00282 D SILICON RECTIFIERS O P E R A T IN G A N D S T O R A G E T E M P E R A T U R E -65°C to +175° C PRV -io @ Tq V PK *F M Sur9e °c aav / Maximum Forward peak Surge Current •
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1N1124A
1N1126A
1N1128A
1N3650
1N16verse
1N1183A
1N1183
1N1184
1N1186
1N1188
1N1614 Diodes
1N1199A
1N1200A
1N1614
1N1615
1N1616
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42HF120
Abstract: of 1N1183 16F120
Text: International SOU R e ctifie r Diodes Standard Recovery 6-40 Amps •FSM 1 Ip(AV) @ TC Part Number Vr r m (V) (A) (°C) 50 Hz (A) 60 Hz (A) Vf m @ t i x If (AV) (V) RthJC DC (°C/W) 6F10 6F20 6F40 6F60 6F80 6F100 6F120 100 200 400 600 800 1000 1200 6 158
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6F100
6F120
12F10
12F20
12F40
12F60
12F80
12F100
12F120
1N1199A
42HF120
of 1N1183
16F120
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Untitled
Abstract: No abstract text available
Text: POWER RECTIFIERS, Stud Package, Standard Recovery ISI Part Num ber Maxim um A verag e R e ctified Current at T* Peak tfl verse Voltage t^ A m p e Ts °C) PIV {Volts) Peak Forward Surge Current @ 8 3ms Supe rim posed Maximum Peak Forward Voltage »t I, „
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1N1202A
1N12Q4A
1N1206A
1N3671A
1N3673A
1N1Z02RA
1284R
1N12G
1N3671RA
1N3673RA
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