1N25 DIODE Search Results

1N25 DIODE Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
CUZ24V		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 24 V, USC
XCUZ13V		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 13.0 V, USC
XCUZ36V		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 36.0 V, USC
CUZ12V		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, USC
MUZ5V6		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 5.6 V, USM

1N25 DIODE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
1N25 diode Abstract: GENERAL PURPOSE UHF MW MIXER DIODE 1N25 Text: 1N25 General Purpose UHF/MW Mixer Diode 69.00 Diodes UHF/Microwave Mixer Dio. Page 1 of 1 Enter Your Part # Home Part Number: 1N25 Online Store 1N25 Diodes General Purpose UH F/MW Mixer Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits	Original	PDF	DO-22 com/1n25 1N25 diode GENERAL PURPOSE UHF MW MIXER DIODE 1N25
Untitled Abstract: No abstract text available Text: HOME \| CATALOG \| CART \|EXPRESS CHECKOUT \| PARTS WATCH \| NEW ITEMS \|RFQ\| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s	Original	PDF	DO-22
1N21B Abstract: 1n23 cv102 Text: ueti, Line, ^s-mi-donductoi TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Microwave Diodes b Notn L C — Conversion Lots MR -NoiK Ratio P R F - M*x. RF Paww V B - Breakdown Voltage - Overall NoiM Fictor	Original	PDF	500/1000mA 1N21C 1N23A 1N21B 1N21B 1n23 cv102
MIL-STD-750E Abstract: 1N21B diode cc 3053 MIL-PRF-680 D65019 rectifier 2037-1 TT 2076 SAE-ARP-743 1N21B diode 1N21* Diode Detector Holder Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2007 INCH - POUND MIL-STD-750E 20 November 2006 SUPERSEDING MIL-STD-750D 28 FEBRUARY 1995 DEPARTMENT OF DEFENSE TEST METHOD STANDARD TEST METHODS FOR SEMICONDUCTOR DEVICES	Original	PDF	MIL-STD-750E MIL-STD-750D MIL-STD-750E 1N21B diode cc 3053 MIL-PRF-680 D65019 rectifier 2037-1 TT 2076 SAE-ARP-743 1N21B diode 1N21* Diode Detector Holder
systron Donner 410 Abstract: MIL-STD-750E Ultrasonic Atomizing Transducer systron donner accelerometer substitute diode PH 33D fastest finger first indicator synopsis emerson three phase dc motor driver service note tektronix 576 curve tracer MIL-STD-750E 1071 proximity detector sensor Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2007 INCH - POUND MIL-STD-750E 20 November 2006 SUPERSEDING MIL-STD-750D 28 FEBRUARY 1995 DEPARTMENT OF DEFENSE TEST METHOD STANDARD TEST METHODS FOR SEMICONDUCTOR DEVICES	Original	PDF	MIL-STD-750E MIL-STD-750D systron Donner 410 MIL-STD-750E Ultrasonic Atomizing Transducer systron donner accelerometer substitute diode PH 33D fastest finger first indicator synopsis emerson three phase dc motor driver service note tektronix 576 curve tracer MIL-STD-750E 1071 proximity detector sensor
1N23C diode Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR Text: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure	OCR Scan	PDF	DO-22, DO-23 DO-37 ardN21H 1N21HR 1N150 1N160 1N150R 1N160R 1N23C 1N23C diode DIODE ku 1490 1N25 diode 1N26A diode 1N415C 1N4294 1N4603R 1N26BR
1N21B Abstract: 1n23b 1N21B diode 1N23 1N25 diode CS34B 1N23CR 1N25 1N23A CS36A Text: 46 Electronic Valves Z& I Aero Services Ltd London England 1972-73 'Tm ìiX G E R M A N IU M J U N C T IO N S T U D M O U N T E D H A L F W A V E R E C T IF IE R S GJ3M, 200 p.i.v. GJ5M, 300 p.i.v. GJ6M, 150 p.i.v. GJ7M, 80 p.i.v. Note 400/800 m A D C . 400/800 m A DC	OCR Scan	PDF	SZT19 1N23C CV111 1N23CR* CV112 1N23E CV291 1N23WEE CV2226 CV2258 1N21B 1n23b 1N21B diode 1N23 1N25 diode CS34B 1N23CR 1N25 1N23A CS36A
in23c Abstract: IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416 Text: SILICONPOINTCONTACTMIXERDIODES They feature high burnout resistance, low ASI Point Contact Mixer Diodes are designed for applications from UHF through noise figure and are hermetically sealed. They are available in DO-7, DO-22, DO-23 26 GHz. and DO-37 package styles which make	OCR Scan	PDF	DO-22, DO-23 DO-37 26GHz. 1N26B DO-37 1N26C 30MHz, 1000Hz in23c IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416
1N263 JAN Abstract: 1N23B diode 1N23B 1N21B diode 1N263 1N21B 1N25 1N23CR DIODE 1N-23b GENERAL SEMICONDUCTOR diodes marking code rq Text: KIL-S-19500/19U U Jaauary 1Q6A OTPKRaZDIHQ^ MIL-3-19500/¿91 28. March 1961 ISUTJUII SpKCIFIQITTOS SEMTOORDUCrOR DEVICE, DIODE, QEHKAKTOH, MUSH TIPS JAH-1I263 Tble specification hag been approved by the Pepartaent of Defense and in aftndfttorr fqf Uie ta^ne IwpartacptB of	OCR Scan	PDF	KIL-S-19500/19U SDPKR38DIHQ KIL-S-19500A91 JAH-1I263 300FE 1673-7l4-e66/3Â 1N263 JAN 1N23B diode 1N23B 1N21B diode 1N263 1N21B 1N25 1N23CR DIODE 1N-23b GENERAL SEMICONDUCTOR diodes marking code rq
IN3492 Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r Text: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90	OCR Scan	PDF	3E120 450E120R 450F05 450F05R 450F10 450F10R 450F20 450F20R 450F30 450F30R IN3492 sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r