1N270 Search Results

Contextual Info: C INTERNATIONAL 30E D • UT'HflB D0D0327 b ■ ' T :Ol-0'7 HI# 1-nil 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 BKC International Electronics Inc, Telephone 617 681-0392 • TeleFax (617) 681-9135 ♦ Telex 928377 Ty. í— ' TYPE FEATURES 1N270 Low forward voltage drop

Contextual Info: 1N2705 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)25’

diodes 1n270

Abstract: 1n270
Contextual Info: 1N270 Optimized for Radio Frequency Response 1.50 Diodes Germanium and Selenium . Page 1 of 1 Enter Your Part # Home Part Number: 1N270 Online Store 1N270 Diodes Optimized for Radio Frequency Response Transistors Enter code INTER3 at checkout.* Integrated Circuits

xl 1507

Abstract: IN270 1N270 JAN part marking lvb diode germanium 1n270 GE 141L gold bonded germanium diode 1N270 1N270 diode equivalent xl 4016 1N270
Contextual Info: ., i_ I TNcR=mml MI L-S- 195001200B 9 JUNE 1989 u lNG MIL-s-19500/2ooA 19 April 1968 MILITARY SPECIFICATION SEMICONDUCTOR OEVICE, OIOOE, GERMANIUM TYPE 1N270 JAN, JANTX, ANO JANTXV This specification is ments and Agencies 1. approved of the for use by all DepartDepartment

DIODE 1N649

Abstract: 1n41481 zener diode diode 1N645 1N4148-1 JAN 1N5619 JAN 1N270 JAN diode 1n4454
Contextual Info: M ilitary Q ualifications Q u a l i f i e d Par ts Part Number Qual Level Page Part Number Qual Level Page 1N270 JAN, JAN TX, JAN TX V 32 1N4454/1N4454-1 JAN, JA N TX , JA N TX V 11 1N276 JAN, JAN TX, JAN TX V 32 1N 4464 thru 1N4496 JAN, JA N TX , JA N TX V

Contextual Info: 1N270+JAN Diodes Germanium Diode Military/High-RelY I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage100“ I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500m V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)200m I(RM) Max.(A) Reverse Current100u @V(R) (V)(Test Condition)50

Contextual Info: 1N277 asi GERMANIUM DIODE DESCRIPTION: PACKAGE STYLE DO-7 The 1N270 is Designed for General Purpose Small Signal, and Switching Applications. MAXIMUM RATINGS 500 mA p e a k If Vr 110 V P diss 80 mW @ Tc = 25 °C Tj -65 °C to +85 °C T stg -65 °C to +85 °C

1n270

Contextual Info: Gold Bonded 1N270 Germanium Diodes Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Applications DO-7 Glass Package AM/FM detectors Ratio detectors 0.018-0.022" FM discriminators 0.458-.558 mm

Contextual Info: 1989963 C E N T R A L S E M I C O N D U C T O R _ 92D 00408 f \ DESCRIPTION The CENTRAL SEMICONDUCTOR 1N100A, 1N270, 1N277, 1N281, 1N283 types are Gold Bonded Germanium Diodes mounted in a hermetically sealed glass case, designed for general purpose applications.

Germanium diode

Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Contextual Info: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes

diode germanium 1n270

Abstract: 1N270 diode 1N270 "Germanium Diode" Germanium Diode 1n270
Contextual Info: 1N270 asii GERMANIUM DIODE DESCRIPTION: PACKAGE STYLE DO-7 The 1N270 is Designed for General Purpose Small Signal, and Switching Applications. MAXIMUM RATINGS 200 mA If p e a k Vr 100 V Pd is s 80 mW @ Te # 25 °C Tj -65 0C to +85 0C Ts t g -65 0C to +85 0C

1N34A do-35

Abstract: 1N34A reverse recovery OA47 AA118 AA143 oa90 AA143 OA90 AA218 1N60 LL 34 1N3467
Contextual Info: B IC C I N T E R N A T I O N A L 30E D • H7nfl3 00003Q0 6 ■ 'T-01-0“7 Q erm anium d i o d e s B B B 3 Type AA117 AA118 AA121 M 123 M 130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 AAZ13 AAZ15 AAZ17 AA218 OA47 OA90 OA180 1N34A 1N55B 1N60 1N87 1N98A 1N100A 1N270

Contextual Info: 1N2708 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)25’

1n270

Abstract: diode germanium 1n270 diodes 1n270 diodes 1N100A 1N283 1N100A 1N277 1N281
Contextual Info: 1989963 CENTRAL SEMICONDUCTOR 92D 00406 r \ DESCRIPTION The CENTRAL S E M I C O N D U C T O R 1N100A, 1N270, 1N277, 1N281, 1N283 types are Gold Bonded Germanium Diodes m ounted in a h e r m e t i c a l l y sealed glass case, designed for general purpose applications,

1N270

Abstract: 1N270 equivalent diode germanium 1n270 1N270 diode equivalent 1N270 diode germanium diode diode 1n270 diode piv 100 500ma "Germanium Diode"
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1N270 Features • • • Germanium Diode 100 Volt Low Leakage Current Flat Junction Capacitance High Mechanical Strength Maximum Ratings

Germanium DO-35 DIODE

Abstract: Germanium Schottky diode 1N270 CDSH270 diode germanium 1n270 DIODE marking 16 schottky diode 1N270 germanium
Contextual Info: CDSH270 SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDSH270 silicon Schottky diode is designed to replace the 1N270 Germanium diode. Some advantages over the 1N270 are lower forward voltage, lower leakage current, faster

1N270

Abstract: diode germanium 1n270 "Germanium Diode"
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1N270 Features • • • Germanium Diode 100 Volt Low Leakage Current Flat Junction Capacitance High Mechanical Strength

1N91 DATASHEET

Abstract: DO-7 1N34A Diode Equivalent 1N34A 1N92 1N91 1N91 diode 1N270 1N295 1N60
Contextual Info: Germanium Diodes DO-1 and DO-7 Cases DO-1 TYPE NO. CASE 1N34A 1N60 1N67A 1N87A 1N91 1N92 1N93 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 1N3666 1N4502 CN695 CN695A DO-7 DO-7 DO-7 DO-7 DO-1 DO-1 DO-1 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7

Contextual Info: 1N2702 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)25’

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-6960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA ; ri f ;•(•;>•;X* i«A MviMfer&stnraK TYPE 1N270 Low forward voltage drop —low power consumption Thirty years of proven reliability

Contextual Info: Gold Bonded 1N270 Germanium Diodes Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Applications DO-7 Glass Package AM/FM detectors Ratio detectors 0.018-0.022" FM discriminators 0.458-.558 mm

diode germanium 1n270

Abstract: 1N270 1N270 diode diode germanium 1n283 diodes 1n270 Germanium Diode 1n270 diode 1N270 1N270 diode germanium 1N277 gold bonded germanium diode 1N270
Contextual Info: Data Sheet 1N270 1N277 1N281 Central' 1N283 GERMANIUM DIODE Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC D0-7 CASE Manufacturers of World Class Discrete Semiconductors The CENTRAL SEMICONDUCTOR INIOOA, 1N270, 1N277, 1N281, 1N283 t y p e s a r e G old Bonded Germaniun

Contextual Info: 1N270 asi GERMANIUM DIODE DESCRIPTION: PACKAGE STYLE DO-7 The 1N270 is Designed for General Purpose Small Signal, and Switching Applications. 0 .1 0 5 [2 . 6 6 7 ] 0 . 0 1 9 -0 .0 2 1 0 . 4 8 3 -0 . 5 3 3 ] 1.000 [2 5 .4 0 ] MAXIMUM RATINGS 200 If mA p e a k

Contextual Info: 1N2700 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current7.2 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.15 V(FM) Max.(V) Forward Voltage2.6 @I(FM) (A) (Test Condition)7.2 @Temp. (øC) (Test Condition)25’