1N3612 JANTX Search Results

JANTX1N5618

Abstract: JANTX1N5616 1N4004 GS1G jantxV1n4247 JANTX1N4246 JANS1N5618 JAN1N3613 1-N3612
Contextual Info: Standard Recovery Rectifiers REC Part Number Microsemi Division- Package Outline Type UR125 1N3612 1N4004 1N4004GP 1N4246 1N5616 1N5616US DL4004 GS1G JAN1N3612 JAN1N4246 JAN1N5616 JAN1N5616US JANS1N5616 JANS1N5616US Watertown Santa Ana Chatsworth Chatsworth

avalanche 1n3613

Abstract: 1N3612 JANTX 1N3613 1N3957 1N3611 1N3612 1N3614 1N3613 JANTX diode power JANTX 1N3613
Contextual Info: 1N3611, 1N3612, 1N3613, 1N3614, 1N3957 Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data VR = IO = trr = V = F ‹ ‹ ‹ ‹ ‹ 200 - 1000 V 1.0A 2µS 1.1V Low reverse leakage current

Contextual Info: 1N3612+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current2.0 @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)750m @Temp. (øC) (Test Condition)25

1N3613

Contextual Info: RECTIFIERS JAN & JANTX1N3611-1N3614 Military Approved, 1 Amp, General Purpose FEATURES • Qualified to MIL-S-19500/228 • Continuous Rating: 1A • Surge Rating: 30A • PIV: to 800V DESCRIPTION This series of M IL approved JAN and JANTX general purpose la m p rectifiers are

IN3613

Abstract: IN3611 JAN IN3613 JANTX1N3611-1N3614 H258C in3612 JANTX1N3611 JAN 1N3613 1N3613 JANTX 200a liu
Contextual Info: RECTIFIERS JAN & JANTX1N3611-1N3614 Military Approved, 1 Amp, General Purpose D ESCRIPTION This series of M IL approved JAN and JANTX general purpose la m p rectifiers are useful in many high rel applications. FEATURES • Qualified to MIL-S-19500/228 • Continuous Rating: 1A

1N3613

Abstract: 1N3611 JANTX JANTX1N3611 1N3613 JANTX 1N3612 PIV RATING 14 V DIODE JANTX1N3612 1N3611 1N3614 720V
Contextual Info: RECTIFIERS JAN & JA N TX 1N3611-1N3614 Military Approved, 1 Amp, General Purpose FEATU RES DESCRIPTIO N • Q u a lifie d to MIL-S-19500/228 T h is s e rie s o f M I L a p p ro v e d J A N and • Continuous Rating: 1A • Surge Rating: 30A • PIV: to 800V

1N3613

Abstract: 1N3611 1N3612 1N3614 1N3957 1N5614 1N5616 1N5618 1N5620 JANTX 1N3613
Contextual Info: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 17 May 2010. MIL-PRF-19500/228N 16 February 2010 SUPERSEDING MIL-PRF-19500/228M 31 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER,

1N3611

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 July 2013. INCH-POUND MIL-PRF-19500/228R 26 April 2013 SUPERSEDING MIL-PRF-19500/228P 26 October 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER,

JANTX, JX, JAN

Abstract: 1N3957 JANTX1N3611 JANTX 1N3613 1N3957 JANTX 1N3611 1N3612 1N3613 1N3614 DO-204AL
Contextual Info: JAN and JANTX 1N3611 thru 1N3614 and 1N3957 Vishay Semiconductors Patented* formerly Glass Passivated Rectifiers 1.0 25.4 MIN. Features • Qualified to MIL-PRF-19500/228 • Class 1 high temperature metallurgically bonded construction brazed > 600°C • 1.0 ampere operation at TA = 55°C with no thermal runaway

JANTX, JX, JAN

Abstract: 1N3613 1N3611 1N3611EG1 1N3612 1N3614EG1 1N3957EG1 DO-204AL RY 228
Contextual Info: JAN and JANTX 1N3611EG1 thru 1N3614EG1 and 1N3957EG1 Vishay Semiconductors Patented* formerly Glass Passivated Rectifiers 1.0 25.4 MIN. Features • Qualified to MIL-PRF-19500/228 • Class 1 high temperature metallurgically bonded construction brazed > 600°C

JAN1N3613

Contextual Info: POWER SEMICONDUCTOR DIVISION IN S * ! » JAN AND JANTX 1N3611 THRU 1N3614 AND 1N3957 MINIATURE GLASS PASSIVATED JUNCTION SILICON RECTIFIER VOLTAGE - 200 to 1000 Volts FEATURES T 1.50C38.1 1. 0 0 25. 4) .110(2.73) nia rf\ .205(5.21) I .140(3.56) 1.50 (38.1)

1N3957

Abstract: SJ36XX 1N39 diode piv OF 5000 VOLTS
Contextual Info: 1N3611 thru 1N3614 and 1N3957 Standard ST ANDARD RECOVERY RECTIFIERS SENSITRON _ SEMICONDUCTOR TECHNICAL DATA A VAILABLE AS DATA SHEET 128, REV. A.1 JAN JANTX JANTXV JAN EQUIVALENT* :

1N3611

Abstract: 1N3611EG1 1N3612 1N3612EG1 1N3613 1N3613EG1 1N3614 1N3614EG1 1N3957 marking Eg1
Contextual Info: INCH POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 16 September, 2001. MIL-PRF-19500/228J 16 July 2001 SUPERSEDING MIL-PRF-19500/228H 14 September 1997 PERFORMANCE SPECIFICATION SHEET *

Contextual Info: DIGITRON SEMICONDUCTORS 1N3611-1N3614, 1N3957 • • • • • • STANDARD RECOVERY RECTIFIERS Microminiature package Voidless hermetically sealed glass package Triple layer passivation Metallurgically bonded Standard recovery PIV to 1000 Volts MAXIMUM RATINGS

3611

Abstract: 1N3611
Contextual Info: 1N3611 thru 1N3614 and 1N3957 Standard STANDARD RECOVERY RECTIFIERS SENSITRON _ SEMICONDUCTOR TECHNICAL DATA AV AI L AB L E AS DATA SHEET 128, REV. A.1 1 N , J AN , J AN T X , J ANT XV

1N6122A JANTX

Abstract: 1N6121 1N6116A JANTX JANTX1N5626 JANTX 1N4246 JANTX 1N5811 JAN 1N5811 1N5416 JANTX JANTX 1N647-1 "general instrument 1n4946
Contextual Info: GENERAL INSTRUMENT # 1 IN PRICE, # 1 IN SERVICE, # 1 IN MILITARY General Instrument Power Semiconductor Division , is the world’s largest manufacturer of rectifiers and bridges, supplying over 2 billion annually. We’re proud to be number one in quality and reliability as we are

MS27491-20

Abstract: tc 144e 1N3457 MS27491 in3612 1N3613 MIL-S-1950 IN3613 1N3612UR JANTX 1N3611UR
Contextual Info: SPE CS I I I I MME ]> • 0G0G15S DD3SEM3 S « M I L S Th e d o c u m e n t a t i o n a n d p r o c e s s I c o n v e rs io n m easures n e ce s sa ryt o I c o m p ly w i t h t h i s r e v i s i o n s h a l l be I c o m p le t e d by 19 A p r i l 1992_ |

diode 1N4383

Abstract: 1N5618US JANTXV JANTX, JX, JAN 1N5614 1N5614US 1N5616 1N5616US 1N5618 1N5618US 1N5620
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 March 2009. MIL-PRF-19500/427M 18 February 2009 SUPERSEDING MIL-PRF-19500/427L 15 October 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

5d 3kv

Abstract: equivalent components of diode 1N4249 Semtech alpac alpac scba2 SCPA2 single phase half controlled full wave bridge rec semtech kv-pac SI96-01 2PFT2 SCBAR4F
Contextual Info: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage

2KV DIODE

Abstract: semtech alpac three phase full wave uncontrolled rectifier sdhd5k 1N6467 fast recovery diode 1a trr 200ns SCPA2 1N6123 JAN 1N6463 JANTX 73A 552
Contextual Info: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage suppressors and custom assemblies. These are available in a variety of packages. Complete device specifications and typical

he804

Abstract: ati connector HE809 smd diode ED MMSD32032602S-C-xx Microspire MB he807 eurofarad TCN30 MMEE08510804S-C-xx mmfl16016604s-c mmfl16016604s-d
Contextual Info: Edition 1.2. Space- & Military Level Components 2008/08 2 Introduction and Table of Contents If you are working on a program for military, industrial and/or space equipments & need product with extended temperature performance, MSA Components can help. To support the customer needs

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered