1N3888 JANTX Search Results

Contextual Info: 1N3888+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current12 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time200n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.4

Contextual Info: 1N3888+JANTXV Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current12 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time200n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.4

tt 3043

Abstract: cp clare relay hg 1002 sol 4011 be 1N3888 clare mercury-wetted relay 1n3884 1N3890 clare mercury relay z037 1N3885
Contextual Info: MIL SPECS I C J Q C m a i H S OODBTOS 1 | MIL-S-19500/304B AMENDMENT 3 11 Auqust 1987 WOTSTDTfre-AMENDMENT 2 8 July 1985 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST-RECOVERY TYPES 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893,

CP CLARE hg 1004

Abstract: 1N3888 UNF-2B 01903 1N3886 clare mercury-wetted relay hgp1004 1n3880r 1N3884 diode 1n3893
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 November 1999. INCH-POUND MIL-PRF-19500/304D 15 August 1999 SUPERSEDING MIL-S-19500/304C 6 June 1989 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY

1N3888

Abstract: 1N3886 1N3886 JANTX 1n3890 datasheet 1N3885 1N3890 1N3890R 1N3891 1N3891R 1N3893
Contextual Info: This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly different in format due to electronic conversion processes. Actual technical content will be the same. The documentation and process conversion measures

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,