1N4007 SILICON Search Results

Dioden

Abstract: 1N4007 diode 1N4007 EM518 EM513 1n4007 diode 1N4007 equivalent 1N4007/1N4007 1N4001 DO-204AL
Contextual Info: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2009-10-16 Nominal current Nennstrom -0.1 5.1-0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07

EM513

Abstract: EM518
Contextual Info: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2013-01-21 Nominal current Nennstrom ±0.1 5.1 -0.1 Type +0.5 62.5 -4.5 Ø 2.6 Ø 0.77±0.07

em516

Contextual Info: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2012-10-30 Nominal current Nennstrom ±0.1 5.1 -0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07

Contextual Info: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2013-01-17 Nominal current Nennstrom ±0.1 5.1 -0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07

threshold voltage 1n4007

Abstract: 1N4007 1n4007 max voltage of 1n4007 1N4007H
Contextual Info: 1N4007 Silicon Rectifier. Case Molded Plastic. Maximum Recurrent Peak Reverse Volta. Page 1 of 1 Enter Your Part # Home Part Number: 1N4007 Online Store 1N4007 Diodes Silicon Rectifier. Case Molded Plastic. Maximum Recurrent Transistors Integrated Circuits

SMD DIODE 513

Contextual Info: 1N4001.1N4007, 1N4007-1300 EM 513, EM 516, EM 518 Silicon Rectifier Silizium Gleichrichter Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse •—nax . ç/ 2-6 X _ — 5 0 .2000 V

Contextual Info: 1N4001 . 1N4007, 1N4007-1300 EM513, EM516, EM518 Silicon Rectifiers Silizium Gleichrichter Version 2004-10-01 Nominal current Nennstrom -0.1 Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…2000 V Plastic case Kunststoffgehäuse 5.1 -0.1

CHARACTERISTICS DIODE 1N4007

Abstract: diode 1N4001 specifications 1N4007 RECTIFIER DIODE DIODE 1N4001 specifications of 1n4007 diode data sheet 1N4007 diode diode 1N4007 specifications diode cross reference 1N4002 1n4007 diode datasheet DIODE 1N4004
Contextual Info: Formosa MS Silicon Rectifier 1N4001 THRU 1N4007 List List. 1 Package outline. 2 Features. 2

Contextual Info: 1N4001 thru 1N4007 Pb Free Plating Product Pb 1N4001 thru 1N4007 1.0 Ampere DO-41 Package Silicon Diode DO-41 Features Unit: inch mm • Low forward voltage drop • High current capability • High surge current capability .034(.86) 1.0(25.4)MIN. .028(.71)

diode 1N4001 specifications

Abstract: CHARACTERISTICS DIODE 1N4007 DIODE 1N4001 characteristics silicon diode 1N4001 specifications OF 1N4001 DIODE Diode Marking 1N4004 surge current DIODE 1N4007 CHARACTERISTICS DIODE 1N4006 1N4007 10A features of DIODE 1N4001
Contextual Info: Formosa MS Silicon Rectifier 1N4001 THRU 1N4007 List List. 1 Package outline. 2 Features. 2

silicon diode 1N4001 specifications

Abstract: 1N4001 rectifier diode 1N4001 specifications
Contextual Info: Silicon Rectifier Formosa MS 1N4001 THRU 1N4007 List List. 1 Package outline. 2 Features. 2

diode cross reference 1N4007

Abstract: diode cross reference 1N4002
Contextual Info: Formosa MS Axial Leaded General Purpose Rectifiers 1N4001 THRU 1N4007 List List. 1 Package outline. 2

DO-41

Abstract: diode 1N4001 specifications 1n4001
Contextual Info: Formosa MS Axial Leaded General Purpose Rectifiers 1N4001 THRU 1N4007 List List. 1 Package outline. 2

Contextual Info: 1N4001 THRU RECTIFIER SPECIALISTS R 1N4007 TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES * * * * Low cost Low leakage Low forward voltage drop High current capability DO-41 MECHANICAL DATA * *

1N4001

Abstract: 1N4007
Contextual Info: 1N4001 THRU 1N4007 GENERAL PURPOSE SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere FEATURES DO-41 The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique

Contextual Info: 1N4001 thru 1N4007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Ampere PLASTIC SILICON RECTIFIERS DO- 41 FEATURES ●Low cost ●Diffused junction ●Low forward voltage drop ●Low reverse leakage current 1.0 25.4 MIN. ●High current capability

1N4001

Abstract: 1N4002 1N4003 1N4004 1N4005 1N4007 RECTRON 1n4004
Contextual Info: 1N4001 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 1N4007 SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * * * * Low cost Low leakage Low forward voltage drop High current capability DO-41 MECHANICAL DATA * * * * * Case: Molded plastic

1N4001

Abstract: 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
Contextual Info: 1N4001 THRU 1N4007 PLASTIC SILICON RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.0 Ampere Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Low forward voltage • High current capability

1N4001

Abstract: 1N4002 1N4003 1N4004 1N4005 1N4007 free 1N4007 ir 9840
Contextual Info: 1 AMP SILICON RECTIFIERS 1N4001 THRU 1N4007 TECHNICAL SPECIFICATION VOLTAGE FEATURES 50 to 1000 Volts Low cost construction utilising void - free moulded plastic technique Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Diffused junction

specifications of 1n4007 diode

Abstract: diode 1N4001 specifications 1N4002 diode download datasheet Diode 1N4001 50V 1.0A DO-41 Rectifier Diode diode 1N4007 specifications diode 1n4001 data sheet diode 1N4007 diode 1n4007 datasheet Diode Equivalent 1N4001 silicon diode 1N4001 specifications
Contextual Info: 1N4001 THRU 1N4007 Elektronische Bauelemente VOLTAGE 50V ~ 1000V 1.0 AMP Silicon Rectifiers A suffix of "-C" indicates halogen-free & RoHS Compliant DO-41 ƔFEATURES .107 2.7 .080(2.0) DIA. . RoHS Compliant Product . Low Forward Voltage Drop . High Current Capability

1N4001

Abstract: 1N4007
Contextual Info: HITANO ENTERPRISE CORP. 1N4001 THRU 1N4007 TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES * * * * Low cost Low leakage Low forward voltage drop High current capability DO-41 MECHANICAL DATA * *

EQUIVALENT OF 1N4001

Abstract: 1N4001 EQUIVALENT 1N 4007 TY
Contextual Info: 1N4001 THRU 1N4007 MINIATURE PLASTIC SILICON RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES ♦ The plastic package carries Underwriters Laboratory Fiammability Classification 94V-0 ♦ Low cost construction utilizing void-free molded plastic technique

1N4001/1n4007 diode datasheet

Abstract: 1N4001-1N4007 diode 1N 4001 1N4001-1N4007 datasheet 4001 1n diode 1n 4007 diode 1n4007 diode 4001 silicon diode 1N 4001 diode 1N4001/1n4007 diode
Contextual Info: 1N4001-1N4007, BY133 Pb 1.0 AMPS. Silicon Rectifiers DO-41 RoHS COMPLIANCE Features High current capability. High efficiency, Low VF. High surge current capability. Low prwer loss Green compound with suffix "G" on packing code and Prefix "G" on date code.

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com 1N4001 - 1N4007 BY133 SILICON RECTIFIER DIODES