1N4150 Search Results

1n3600

Abstract: 1N4150 1n3600 chip
Contextual Info: P O M P I JTFR DIODF W I T ,r u 1 L/IV7t/U 200rnA Low Power, Switching 1N3600; JAN, JANTX & JANTXV I N 3600 1N4150; JAN, JANTX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 FEATURES DESCRIPTION • • • • This series of switching diodes is useful in many computer sw itching applications, for

Contextual Info: Silicon Switching Diodes 1N4150, 1N4150-1 & 1N3600 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C

Contextual Info: 1N4150 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diodes FEATURES • Silicon epitaxial planar diode • Low forward voltage drop • AEC-Q101 qualified • High forward current capability • Material categorization: For definitions of compliance please see

1N4148.1N4448

Abstract: BYV37-BYV38 byg20
Contextual Info: Temic Semiconductors Selector Guide - Alphanumeric Index 1N4148.1N4448 1N4150 1N4151 1N4154 1N4728A.1N4761A 1N5221B.1N5267B 1N5417.1N5418 BA1282.BA1283 BA282.BA283 BA479G.BA479S BA604 BA679.BA679S BA682.BA683 BA779.BA779S BA779 - 2 BA979.BA979S BA982.BA983

Contextual Info: 1N4150_ Vishay Telefun ken Silicon Epitaxial Planar Diode Features • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings

Contextual Info: Diodes High–speed switching diode 1N4148 / 1N4150 / 1N4448 / 1N914B ✻This product is available only outside of Japan. FJEDEC Standard Product The following 1N series diodes are available to support the JEDEC standard. FExternal dimensions Units: mm FAbsolute maximum ratings (Ta = 25°C)

Contextual Info: 1N4150W Small-Signal Diode SOD-123 .022 0.55 Mounting Pad Layout Top View 0.094 (2.40) 0.055 (1.40) 0.055 (1.40) .112 (2.85) .100 (2.55) .152 (3.85) .140 (3.55) Cathode Band .006 (0.15) max. .053 (1.35) max. .067 (1.70) .055 (1.40) .004 (0.1) max. Dimensions in inches

DIODE WITH SOD CASE

Abstract: DIODE MARK 35 max 083 1N4150 1N4150W LL4150
Contextual Info: 1N4150 Small Signal Diodes FEATURES ♦ Silicon Epitaxial Planar Diode min. 1.083 27.5 ♦ For general purpose and switching. max. ∅.079 (2.0) ♦ This diode is also available in other Cathode Mark min. 1.083 (27.5) max. .150 (3.8) DO-35 case styles including: the SOD-123 case

fairchild 1n4150

Abstract: FAIRCHILD DIODE ultra fast diode 1N4150
Contextual Info: 1N4150 / FDLL4150 COLOR BAND MARKING 1ST BAND 2ND BAND DEVICE FDLL4150 BLACK ORANGE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics.

Contextual Info: VfSMAY _ LS4150 ▼ Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4150 • Q uadra M elf package Applications High speed sw itch and general purpose use in co m ­

1N4150

Abstract: MM4150 Rectron Semiconductor glass mini melf diode
Contextual Info: RECTRON SEMICONDUCTOR MM4150 TECHNICAL SPECIFICATION 1N4150 mini-MELF SIGNAL DIODE Absolute Maximum Ratings Ta=25°C Items Symbol Ratings Reverse Voltage VR 50 Reverse Recovery trr 4 Time Power Dissipation Ptot 500 Forward Current Junction Temp. Storage Temp.

1N3600

Abstract: 1N4150 1N4150-1 JTXV1N3600
Contextual Info: COMPUTER DIODE JAN, JANTX & JANTXV 1N3600 JAN, JANTX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 200mA Low Power, Switching FEATURES DESCRIPTION • • • • • This series of switching diodes is useful in many computer sw itching applications, for both m ilitary and comm ercial systems.

1N4150

Abstract: 1N4150-TAP 1N4150-TR DO35 1n4150 vishay
Contextual Info: 1N4150 Vishay Semiconductors Small Signal Fast Switching Diodes Features • • • • • Silicon Epitaxial Planar Diode Low forward voltage drop e2 High forward current capability Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

DSAIH0002550

Contextual Info: Square ended SMD Fvv Silicon switching diodes 1N6638US 1N6642US 1N6643US Applications High Rel. Voidless MELF "D" General purpose fast diodes with rugged voidless hard glass tungsten design. Able to replace lower power types like 1N4148UR-1 and 1N4150UR-1.

Contextual Info: wmmt ▼ LS4150 _ Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4150 • Quadra Melt package Applications High speed switch and general purpose use in com­ puter and industrial applications

00 marking SOD-123

Abstract: A4 marking diode Code sod-123 on semiconductor diode marking a4 marking a4 1N4150 1N4150W LL4150 A4 marking diode SOD 123 sod-123 DIODE marking code D3
Contextual Info: 1N4150W Small Signal Diode SOD-123 .022 0.55 Pad Layout SOD-123 Top View 0.094 (2.40) 0.055 (1.40) 0.055 (1.40) .112 (2.85) .100 (2.55) .152 (3.85) .140 (3.55) Cathode Band .006 (0.15) max. .053 (1.35) max. .067 (1.70) .055 (1.40) .004 (0.1) max. Dimensions in inches

in4151

Abstract: IN4150 IN4153 IN4153 diode N4150 1N4150 1N4151 1N4153 IEC134
Contextual Info: • bbSB'm N AUER 202 ooab^oa 1N4150 1N4151 1N4153 hapx PHILIPS/DISCRETE bTE D ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.

in3600

Abstract: IN4150 1N3600 MIL-PRF-19500/231 1N4150 1N4150-1 D0-35
Contextual Info: • 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N4150 and 1N4150-1 and 1N3600 • DOUBLE PLUG CONSTRUCTION

Diode 1N4150

Abstract: BY100 JR100 marking 1n3 diode R-1 ROHM 1N3600
Contextual Info: • DOOfiTbD 2bl ■ R H M ROHVn 1N4150/1N3600 DIODE ROHM STANDARD ABSOLUTE MAXIMUM RATINGS: Ta=25’C Peak Reverse Voltage Reverse Voltage DC Peak Forward Current Forward Current DC Peak Forward Surge Current Total Power Dissipation Junction Temperature

Switching diode 50V 200mA

Abstract: 1N4150
Contextual Info: 1N4150 SILICON EPITAXIAL PLANAR DIODE Features • Fast Switching Speed • High Reliability • High Conductance • For General Purpose Switching Applications Mechanical Data • Terminals: Solderable per MIL-STD-202, • Method 208 • Marking: Type Number

1N4150

Contextual Info: tfiBS 1N4150 FAST SWITCHING DIODE y LITEM ZI POWER SEMICONDUCTOR Features • • • Ideal for Fast Logic Applications Ultra Fast Switching High Reliability I Mechanical Data_ • • • • • DO-35 Case: DO-35, Plastic Leads: Solderable per M IL-STD-202,

Contextual Info: 1N4150 Small Signal Switching Diodes VOLTAGE RANGE: 50 V CURRENT: 150 m A DO - 35 Features ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation Mechanical Data ◇ Case: DO-35,glass case ◇ Polarity: Color band denotes cathode

Contextual Info: Silicon Switching Diodes 1N4150UR, 1N4150UR-1 & 1N3600UR Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65 °C to +175 °C

Contextual Info: 1N4150 VISHAY Vishay Semiconductors Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications