1N4153 SILICON DIODES Search Results

1N4009

Abstract: BKC666 1N4938 1N625 1N914 1N914A BAW75 BAW76 BKC600 BKC900
Contextual Info: B K C INTERNATIONAL 3 Silicon Switching !Diodes for Computer Applications in DO-35 Package I Type BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N625 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N41S4 1N4446

DO-35 PACKAGE

Abstract: DSAIH000251
Contextual Info: B K C INTERNATIONAL 3 Silicon Switching !Diodes for Computer Applications in DO-35 Package I Type BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N625 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N41S4 1N4446

Switching

Abstract: 1N3065 1n914 equivalent 1N3605 1N4151 equivalent 1N3062 1N4153 silicon diodes 1N4863 datasheets diode 1n3064 1N3063
Contextual Info: Silicon Diodes DO-35 Case Switching Diodes TYPE NO. 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605 1N4148 1N4150 1N4151 1N4152 1N4153 1N4154 1N4444 1N4446 1N4447 1N4448 1N4449 1N4454 1N4863 1N4864 VRRM V MAX 100 100 75 75 75 75 50 40 75 100

JX4153

Abstract: JV4153 1N4153-1 1N4153UR-1 1N4534 J-1N4148 diode MARKING CODE jx 337K
Contextual Info: INCH-POUND MIL-PRF-19500/337K w/AMENDMENT 2 15 July 2010 SUPERSEDING MIL-PRF-19500/337K w/AMENDMENT 1 25 January 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N4153-1, 1N4153UR-1, 1N4153UB, 1N4153UBCA, 1N4153UBCC, 1N4153UBD,

Contextual Info: 1N4150 1N4151 1N4153 b b S B ' m D02b^03 202 H A P X N AUER PHILIPS/DISCRETE b^E D _X' V ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in subminiature DO-35 envelopes. The IN4150 is primarily intended for general purpose use in computer and industrial applications.

in4151

Abstract: IN4150 IN4153 IN4153 diode N4150 1N4150 1N4151 1N4153 IEC134
Contextual Info: • bbSB'm N AUER 202 ooab^oa 1N4150 1N4151 1N4153 hapx PHILIPS/DISCRETE bTE D ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.

in4151

Abstract: IN4150 IN4153 diode IN4153 N4150 1N4151 1N4153 1N4150 IEC134 colourcoded diodes
Contextual Info: • bbSB'm 1N4150 1N4151 1N4153 OOEb'îOB 202 H A P X N APIER P HILI PS/D ISCR ETE b^E » ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.

1N4153

Abstract: LM390
Contextual Info: 1N4153 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N4153 Availability Online Store

1N4153 silicon diodes

Abstract: 1N4151 1N4152 1N4153 1N4154 D0-35
Contextual Info: 1N4151 THRU 1N4l 5A Central Semiconductor Corp. Central Semiconductor Corp. SILICON SWITCHING DIODE JEDEC DO-35 CASE 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 1N4151 Series types are Hermetically Sealed Silicon Diodes

JANTX 1N916

Abstract: diode 1n4446 DA-Series 1n4148 D035 1N4532 1N916 JANTX general electric 1n4727 1N4148.1N4448 1N4148 1N4151
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25 20

DIODO 1N4148

Abstract: diodo 1N914 1N4532 2 935 diodo in4727 1N4727 1N4148 1N4149 DZ806 1N4152
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N 914 1N 914A 1N 9 1 4 B BV @ 100/1A Min. V I r @ 25°C Max. (ri A) @ V r (V) V f Max. (V) @ I f (m A) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Num ber 100 100 25 30 1.00 10 4 25 20 1.00

1N5426

Abstract: 1N5208 AMERICAN POWER DEVICES 1n914
Contextual Info: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current

1N4151f

Abstract: 1N4152 ditty 1N4151 1N4153 1N4154 J103 1N4151-1N4152-1N4153-1N4154
Contextual Info: 1775470 C O D I SEMICONDUCTOR IN C -L U ,-— TO 90D 0 0 5 7 9 D y_ — // DE | l 7 7 S 4 7 D □ □□□57ci 5 äliiä CODI Semiconductor, Inc. 1N 4151-1N 4152-1N 4153-1N 4154 HIGH SPEED DIODES • SILICON PLANAR EPITAXIAL D O -35 OUTLINE • C .4 p F MAX

in4151

Abstract: 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A 1N914B 1N916
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N 914A 1N 914B BV @ 100/1A Min. V I r @ 2 5 °C Max. (ri A) @ V r (V ) V f Max. (V ) @ I f (m A ) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Number 100 100 25 30 1.00 10 4 25 20 1.00

Contextual Info: Silicon Diodes DO-35 Case p Switching Diodes TYPE NO. Vrrm VF @ If trr Ct V •o (mA) (V) (mA) (ns) (pF) MAX MAX MAX 1N914 100 150 1.0 10 4.0 4.0 1N914B 100 150 1.0 100 4.0 4.0 1N3062 75 75 1.0 20 2.0 1.0 1N3063 75 75 0.85 10 4.0 2.0 1N3064 75 75 1.0 10

Contextual Info: Silicon Diodes DO-35 Case €3 Switching Diodes TYPE NO. V r rm lo VF @ If trr CT V (mA) (V) (mA) (ns) (PF) MAX MAX MAX 1N914 100 150 1.0 10 1N914B 100 150 1.0 1N3062 75 75 1.0 MAX 4.0 4.0 100 4.0 4.0 20 2.0 1.0 1N3063 75 75 0.85 10 4.0 2.0 1N3064 75 75

Contextual Info: Silicon Diodes €3 DO-35 Case Switching Diodes TYPE NO. Vrrm •o VF @ If mA (V) (mA) (V) MAX MAX MAX trr (ns) CT (pF) MAX 1N914 100 150 1.0 10 4.0 4.0 1N914B 100 150 1.0 100 4.0 4.0 1N3062 75 75 1.0 20 2.0 1.0 1N3063 75 75 0.85 10 4.0 2.0 1N3064 75 75

iskra diode

Abstract: BA513 BA531 Iskra by dioda DIODE ISKRA BA519 Iskra BA-518 1N4153 silicon diodes BA517
Contextual Info: IS K R A E L E C T R O N IC S IN C 2SE D • 4 fifiB 4 7 7 Silicijeve planarne signalne diode Silicon planar signal diodes Uf prl/at If I fav *'. Übb : ■ ^trr > ' pri/at pri/at pri/at 1 MHz ¿tOÓ/iA: 25 °C Ùufib —25 °C 25°C Ur Ur=OV Tip/Type mA

Contextual Info: Silicon Diodes DO-35 Case Switching Diodes TYPE NO. Vf V lo (mA) (V) (mA) MAX MAX MAX 1.0 10 4.0 4.0 1.0 100 4.0 4.0 Vrrm IF trr Ct (ns) (PF> MAX 1N914 100 150 1N914B 1G0 150 1N3062 7'5 75 1.0 20 2.0 1.0 1N3063 75 75 0.85 10 4.0 2.0 1N3064 75 75 1.0 10

1N4149

Abstract: 1N4150 1N4152 1N4153 1N4154 1N4447 1N4449 1N4454 1N914 ts65
Contextual Info: 1N914 THRU 1N4454 SILICON EPITAXIAL PLANAR DIODES Features Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. D IM E N S IO N S D IM in c h e s M ax. M in . M ax. -

BA513

Abstract: iskra diode BA523 BA521 BA519 DIODE BA531 BA521 diode BA531 iskra BA533
Contextual Info: ISKRA ELECTRONICS INC SSE D • 4063477 Silicijeve planarne signalne diode Silicon planar signal diodes *'. lien Tip/Type BA 511 BA 513 BA 517 BA 518 BA 519 BA 520 BA 521 BA 523 BA 531 BA 533 BA 543 BA 544 BA 545 BA 546 BA 547 :io o m 1N4148 1N4448 1N4150

Contextual Info: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature

1N3605

Abstract: 1N3065 1N3062 1N3063 1N3064 1N3600 1N3604 1N4148 1N914 1N914B
Contextual Info: Silicon Diodes DO-35 Case • «3 Switching Diodes TYPE NO. Vr r m •o VF @ If trr Ct V (mA) (V) (mA) (ns) (PF) MAX MAX MAX 1N914 100 150 1.0 10 4.0 4.0 1N914B 100 150 1.0 100 4.0 4.0 1N3062 75 75 1.0 20 2.0 1.0 1N3063 75 75 0.85 10 4.0 2.0 MAX 1N3064 75

1n4149

Abstract: 1N4153 silicon diodes 1N4151 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Contextual Info: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature