1N4153-1 JANTXV Search Results

in4153

Abstract: c 337 25 1N4153 1N4153-1 D0-35
Contextual Info: • 1N4153 and 1N4153-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/337 1N4153 and 1N4153-1 • SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C

IN4153

Contextual Info: • 1N4153 and 1N4153-1 AVAILABLE IN JAN, JANTX, AND JANTXV 1N4153 and 1N4153-1 PER MIL-PRF-19500/337 • SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C

IN4153

Abstract: 1N4153 1N4153-1 IN4153-1
Contextual Info: JAN, JANTX, •1N4153 and 1N4153-1 AVAILABLE IN AND JANTXV 1N4153 and 1N4153-1 PER MlL-PRF-19500/337 'SW ITCHING DIODES 'H E R M ETIC A LLY SEALED ' METALLURGICALLY BONDED ' DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Ju n ctio n T e m p e ra tu re : -6 5°C to + 17 5°C

Contextual Info: FEATURES 1N4153-1 • 1N4153-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/337 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:

smd 2U 75 diode

Abstract: SMD DIODE 2U smd 2U diode DSAIH0002551
Contextual Info: Silicon Switchina Diode Applications 1N4153, 1N4153-1 k_1I DO-35 Glass Package Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Lead D ia

1N4153

Abstract: 337 SMD 1N4153-1
Contextual Info: Silicon Switching Diode Applications 1N4153, 1N4153-1 DO-35 Glass Package Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Six sigma quality Metallurgically bonded

Contextual Info: 1N4153, Silicon Switching Diode 1N4150 Applications DO-35 Glass Package 1N4153-1 Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Six sigma quality

1N4153-1

Abstract: 337 SMD 1N4150 1N4153
Contextual Info: 1N4153, Silicon Switching Diode 1N4150 Applications DO-35 Glass Package 1N4153-1 Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Six sigma quality

smd 2U 75 diode

Abstract: SMD DIODE 2U
Contextual Info: Silicon Switching Diode Applications 1N4153, 1N4153-1 i DO-35 Glass Package Used in general purpose applications,w here a low current controlled forward characteristic and fast switching speed are important. Features • • • • • • • Six sigm a quality

GE 7252

Abstract: JANTXV1N4532 JAN1N4153-1 JANTX1N4150-1
Contextual Info: Signal/General Purpose Diodes PartNum ber SIG JANTXV1N4532 1N4153 JAN1N4153 JAN1N4153-1 JAN1N4153-1 JANTX1N4153 JANTX1N4153-1 JANTX1N4153-1 JANTX1N4153UR-1 JANTXV1N4153 1N4153-1 JANTXV1N4153-1 JANTXV1N4153UR-1 1N4154 BAV70 BAW5S 1N3600 1N4151 MLL4150-1

JX4153

Abstract: JV4153 1N4153-1 1N4153UR-1 1N4534 J-1N4148 diode MARKING CODE jx 337K
Contextual Info: INCH-POUND MIL-PRF-19500/337K w/AMENDMENT 2 15 July 2010 SUPERSEDING MIL-PRF-19500/337K w/AMENDMENT 1 25 January 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N4153-1, 1N4153UR-1, 1N4153UB, 1N4153UBCA, 1N4153UBCC, 1N4153UBD,

RAW MATERIAL INSPECTION procedure

Abstract: 1N4153 1N4534 1N4453
Contextual Info: C O M P U T E R n iO D F 1N4153, JAN, JANTX & JANTXV 1N4153 1N4534, JAN, JANTX & JANTXV 1N4534 r 150mA Switching Diode FEATURES • Metallurgical Bond • Qualified to MIL-S-19500/337 • Planar Passivated Chip • DO-34 or DO-35 Package DESCRIPTION This device is particularly suited to

Contextual Info: COMPUTER DIODE V r-i 1N4153, JAN, JANTX & JANTXV 1N4153 1N4534, JAN, JANTX & JANTXV 1N4534 a 150mA Switching Diode FEATURES DESCRIPTION • • • • This device is particularly suited to applications where tightly controlled forward characteristics and fast recovery

75V 150mA Diode

Contextual Info: COMPUTER DIODE 1c i r 150mA Switching Diode vy i" 1N4153, JAN, JANTX & JANTXV I N 4153 1N4534, JAN, JANTX & JANTXV 1N4534 FEATURES • • • • DESCRIPTION This device is particularly suited to applications where tightly controlled forward characteristics and fast recovery

diode smd ED 84

Abstract: DSAIH00025343 SMD 437 diode
Contextual Info: Silicon Switching Diode 1N4153 DO-35 Glass Package Applications Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. Features DO-35 Glass Package nominal dimensions Six sigma quality

Contextual Info: Silicon Switching Diode i 1N4153 • fe0-35 Glass Package Applications Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. Features • • • • • • DO-35 Glass Package nominal dimensions

1N4153

Abstract: JANTXV1N4153 ADE 617
Contextual Info: COMPUTER DIODE JAN, JANTX & JANTXV 1N4153 150mA Switching Diode FEATURES • • • • • DESCR IPTIO N M etallurgical Bond Qualified to MIL-S-19500/337 Planar Passivated C h ip DO-35 Package Non-JAN Available This device is particularly suited to applications where tigh tly controlled

1N4532

Abstract: 1n4631 IN643 1n662 jantx 1N3064 1N4151 1N4154 1N4534 1N643 1N662
Contextual Info: 1N643; JAN 1N643 1N662; JAN 1N662 1N663; JAN 1N663 COMPUTER DIODE Switching FEATU RES DESCRIPTION • M etallurgical Bond T h is device is particularly suited to a pp licatio ns where m ediu m speed sw itching is required. M oisture free stability is ensured through herm etic

D0-213AA

Abstract: Scans-0016000 1N4153-1 JANTXV 1N4153 1N4153-1 1N4153UR-1 1N4534 337F
Contextual Info: MIL 414E S PE C S IThe documentation and process Iconversion measures necessary to ¡comply with this revision shall be Icompleted by 4 January 1994_ J> m 0DDD1S5 □ □ 3 3 cltjS 4 H MILS | | | [ ! INCH POUND j MIL-S-19500/337F 4 October 1993 SUPERSEDING

Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 15 June 2013. INCH-POUND MIL-PRF-19500/337L 15 March 2013 SUPERSEDING MIL-PRF-19500/337K AMENDMENT 3 3 June 2011 PERFORMANCE SPECIFICATION SHEET

E421 fet

Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
Contextual Info: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.

100414DC

Abstract: 5401DM Fairchild dtl catalog fsa2719m 4727BPC FCM7010 FCM7004 937DMQB fairchild rtl FSA2501
Contextual Info: FAIRMONT ELECTRONICS PTY. LTD. TE L.48-6421 4 8 -6 4 8 1 /2 /4 C AB LES ' FAIRTRONICS' C R A IG H A L L T E L E X 8-3227 S A . P O .BOX 41102, C R A IG H A LL 2024. I ouani v-ox 39! 262Bramley 2018 FAIRCHILD 464 Ellis Street, M ountain View, C alifornia 94042

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the