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    mmbd1201-1205

    Abstract: 1N4454 mmbd1201
    Text: 1N4454 ta Discrete POW ER & Signa l Technologies National Semiconductor" 1N4454 High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol Value


    OCR Scan     		1N4454 DO-35 MMBD1201-1205 40S3T bSD1130 1N4454 mmbd1201 PDF

    jedec Package do

    Abstract: No abstract text available
    Text: noNm •JEDEC Standard <Absolute maximum ratings> >f s m Part No. V rm V Vr (V) Ifm (mA) to (mA) Ip (mA) 1n 8 (A) P (mW) Tj Topr Tstg CO Cc) Cc) Package 1N4148 1N914 100 75 450 150 200 2 500 200 - 6 5 - + 200 - 6 5 — + 200 DO-35 1N4149 1N916 100 75 450


    OCR Scan     		1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N4154 1N4446 1N4447 1N4448 jedec Package do PDF

    diode SG22

    Abstract: 1N918 1N400 diode 1N5317 1N69B 1N919 1N849 1N673 1N688 1N4141
    Text: 3869720 G E N E R A L D IO D E CORP 86D 0 0 3 3 8 GENERAL DIODE CORP flb T - D E l B û b T O D DD0D33fl 3 1 T àl-à7 SILIC O N D IO D ES . . . cont’d Case Style — DO-7 'il % 9& <h r« yi o ° o TYPE 1N4B2A 1N4S3 1N463A 1N464 1N4B4A Ç90 ïO cl 30 30


    OCR Scan     		DDDD33fl 1N462A 1N463A 1N464 1N482 1N482A 1N482B 1N483 1N483A 1N483B* diode SG22 1N918 1N400 diode 1N5317 1N69B 1N919 1N849 1N673 1N688 1N4141 PDF