1N47 SERIES Search Results

1N47 series zener diodes

Abstract: 1n47 ZENER 1N47 SERIES 1N47 zener 1N47 series diodes zener diode 1N47 1N47 SERIES 1N4742a Zener 1N4737A diode 1N47
Contextual Info: LESHAN RADIO COMPANY, LTD. 1N47 SERIES ZENER DIODES 1N47 1N47 SERIES ZENER DIODES T A=25°C unless otherwise noted VFMAX=1.2V @ I F =200mA for all types. V Z tolerance: ±5% 10 10 9 9 8 7 5 2 3.5 4 4.5 5 7 8 9 10 14 16 20 22 23 25 35 40 45 50 60 70 80 95

Contextual Info: 1W 1N47 Series Zener Diodes . 1W DO-41 . Zener voltage regulator diodes . Hermetically sealed glass silicon zener diodes . Complete voltage range_3.3 to 100volts . We declare that the material of product compliance with RoHS requirements. ProductCharacteristic

DIODE 1N47

Abstract: 1N47-SERIES DIODE 1N4747 ZENER 1N47 SERIES diode 1n4742 1N47 zener diode 1n4744 zener diode 1N47 CHARACTERISTICS DIODE 1n4732 zener diode numbering system
Contextual Info: 1W , ± 5% ZENER DIODES 1N47-SERIES RoHS Compliant Product A suffix of "-C" specifies halogen-free Device Type 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A 1N4736A 1N4737A 1N4738A 1N4739A 1N4740A 1N4741A 1N4742A 1N4743A 1N4744A 1N4745A 1N4746A

Contextual Info: LESHAN RADIO COMPANY, LTD. 1W 1N47 Series Zener Diodes . 1W DO-41 . Zener voltage regulator diodes . Hermetically sealed glass silicon zener diodes . Complete voltage range_3.3 to 43volts . We declare that the material of product compliance with RoHS requirements.

1N474SA

Contextual Info: OGGGGOb S 24E D R F ELECTRONICS INC DO-41 Features • Silicon Planar diode, double heat sink, • Storage Temperature—65°C~+175°C • Junction Temperature ~175 °C 1N47 Series 1 Watt Glass Zener Diodes In DO-41 Package Device Typ* 1N4728A 1N4729A 1N4730A

1N47 Zener

Contextual Info: 1W 1N47*AM Series Zener Diodes Feature & Dimensions * 1W DO-41 *Zener voltage regulator diodes * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Complete voltage range_24volts * We declare that the material of product compliance with RoHS requirements.

1n4747a 51

Abstract: DIODE 1N47 zener diode 1N47 1N47 ZENER 1N47 SERIES 1N47 Zener 1N4728A 1N4729A 1N4730A 1N4731A
Contextual Info: DETRONTM 1N47 Series Zener Diode DO-41 Glass max. 0.82 Features . Low reverse leakage . Low zener impedance . Maximum power dissipation of 1000 mW . High stability and high reliability min. 27.5 3.0 0.2 5.0 0.2 CATHODE MARK Mechanical Data min. 27.5 Case: DO-41 Glass

1N47 series zener diodes

Abstract: 1N47 series diodes zener diode 1N4742 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A
Contextual Info: 1N47-SERIES ZENER DIODES Zener Voltage:3.3-100V Peak Pulse Power:1.0W FEATURE Low zener impedance Low regulation factor Glass passivated junction High temperature soldering guaranteed: 260 C/10S/9.5mm lead length at 5 lbs tension DO-41 GLASS 1.10(27.9) MIN.

zener diode 1N47

Abstract: 1n47 DIODE 1N47 1N4742A 12 volt zener diode 1N47 Zener 1N47 series zener diodes 1N47 SERIES 1n47 diode 1N47 series diodes FARNELL ZENER DIODE
Contextual Info: 1N47- Series Features: • • • • • • Low profile package. Built-in strain relief. Glass passivated junction. Low inductance. Typical IR less than 5.0µA above 11V. High temperature soldering guaranteed: 260°C/10 seconds at terminals • Plastic package has underwriters laboratory

1N47 series zener diodes

Abstract: 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A 1N47
Contextual Info: 1N47-SERIES ZENER DIODES Zener Voltage:3.3-100 V Peak Pulse Po wer: 1.0W FEATURE ♦ Low zener impedance ♦ Low regulation factor ♦ Glass passivated junction ♦ High temperature soldering guaranteed: 260°C/1 OS/9.5mm lead length at 5 lbs tension _ M E C H A N IC A L DATA_

1n47

Contextual Info: 1N47 SERIES 稳压（齐纳）二极管 Zener Diodes •特征 Features ■外形尺寸和印记 ●Ptot 1.0W ●Vz 3.3V-100V Outline Dimensions and Mark DO-41 .177 4.50 MAX 1.02(26.0) MIN 1.02(26.0) MIN ■用途 Applications ●稳定电压用 Stabilizing Voltage

Contextual Info: SIYU R 1N47 Series 特征 Features DO-41 Glass max. 0.82 ・反向漏电流小。 Low reverse leakage ・齐纳击穿阻抗低。 Low zener impedance ・最大功率耗散1000mW。 Maximum power dissipation of 1000 mW min. 27.5 ・高稳定性和可靠性。 High stability and high reliability

Contextual Info: SIYU R 1N47 Series 特征 Features DO-41 Glass max. 0.82 •反向漏电流小。 Low reverse leakage ·齐纳击穿阻抗低。 Low zener impedance ·最大功率耗散1000mW。 Maximum power dissipation of 1000 mW min. 27.5 ·高稳定性和可靠性。 High stability and high reliability

Contextual Info: SIYU R 1N47 Series 特征 Features Outline Dimensions ● 反向漏电流小 Low reverse leakage ● 齐纳击穿阻抗低。 Low zener impedance ● 最大功率耗散1000mW。 Maximum power dissipation of 1000 mW ● 高稳定性和可靠性。 High stability and high reliability

1N48

Contextual Info: 3 Channel-DC-Bias IC for CRT Displays CORPORATION Preliminary Data Sheet CVA4501 FEATURES • • • • • GENERAL DESCRIPTION R, G, B Cut-Off and Brightness . . . . . . . . . . . DC Control Cut-Off Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

Contextual Info: 3 Channel-DC-Bias 1C for CRTDisplays calocflc C O R P O R A T IO N V Preliminary Data Sheet CVA4501 FEATURES GENERAL DESCRIPTION • • • • • The CVA4501 is a 3 Channel Video Output Bias Circuit designed to replace most of the discrete circuitry required to

3025

Abstract: CVA4501T
Contextual Info: 3 Channel-DC-Bias 1C for CRT Displays W U IO Q IW CORPORATION V Preliminary Data Sheet CVA4501 FEATURES GENERAL DESCRIPTION • • • • • The CVA4501 is a 3 Channel Video Output Bias Circuit designed to replace most of the discrete circuitry required to

ptc s6

Abstract: 1N400R
Contextual Info: ‘ 6 T Ï 5 9 5 U MI CR O SE MI 02 iE | tllS IS O CORP/POWER 0 2E 0 0 4 8 6 GGDGMflb 1 J - 2- / PTC 872 PTC 874 PTC 876 '-ui TECHNOLOGY T - 0 2 - D Î '4 Power Technology Components ¡¿is. •HIGH VOLTAGE FAST RECOVERY POWER RECTIFIERS 50 AMPERES 200-600 VOLTS •

Contextual Info: _| o _ 3 Channel-DOBias 1C for CRT Displays CQIOQ 1C CORPORATION Preliminary Data Sheet CVA4501 FEATURES GENERAL DESCRIPTION • • • • • The CVA4501 is a 3 Channel Video Output Bias Circuit designed to replace most of the discrete circuitry required to

2x062h

Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1

2N7002 NXP MARKING

Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
Contextual Info: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered