1N5395 DIODE Search Results

1n5395

Contextual Info: 1N5395 Silicon Rectifier. Case Molded Plastic. Maximum Recurrent Peak Reverse Volta. Page 1 of 1 Enter Your Part # Home Part Number: 1N5395 Online Store 1N5395 Diodes Silicon Transistors Rectifier. Case Molded Plastic. Maximum Integrated Circuits Recurrent Peak R everse Voltage 400 V. Maximum Average

1N4007 sma

Abstract: 1N5819 SMA 1N4007 SMB 1N5822 SMA 1N4004 SMA 1N4004 SMB 1n4000 sERIES DIODES ES2D B3 1N5822 SMB 1N5819 SMB
Contextual Info: § BRIDGE RECTIFIERS & DIODES General Purpose Diodes Series Voltage l(AV 50 200 100 300 400 500 600 1N4004 800 Outline 1000 1N4000 1 1N4001 1N4002 1N4003 1N4005 1N4006 1N4007 DO-41 1N5391 1.5 1N5391 1N5392 1N5393 1M5394 1N5395 1N5396 1N5397 1N5398 1N5399

1N5391-1N5399

Abstract: 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399
Contextual Info: LESHAN RADIO COMPANY, LTD. 1N5391– 1N5399 1.5A 1.5A GENERAL DIODES TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz PRV I O@ T L V PK 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 50 100

Contextual Info: LESHAN RADIO COMPANY, LTD. 1N5391– 1N5399 1.5A 1.5A GENERAL DIODES TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz PRV I O@ T L V PK 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 50 100

1N5395 diode

Abstract: 1N5395
Contextual Info: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s

1n5397

Abstract: 1n5399 1n5392 1n5395 1N5391 AV300 1n5397 DC 1N5393 1N5394 1N5396
Contextual Info: 1N5391 thru 1N5399 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 1.5 A VRRM 50 V to 1000 V IFSM 25 A VF 1.4 V IR 5.0 A Tj max. 150 °C DO-204AL (DO-41) Features Mechanical Data • • • • Case: DO-204AL, molded epoxy body

1N5393

Abstract: 1N5391 1N5392 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399
Contextual Info: 1N5391 thru 1N5399 Vishay General Semiconductor General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 1.5 A VRRM 50 V to 1000 V IFSM 50 A VF 1.4 V IR 5.0 A Tj max. 150 °C DO-204AL (DO-41) Features Mechanical Data • • • • Case: DO-204AL, molded epoxy body

1N5399

Abstract: 1N5397 1N5392 1N5398 1N5394 1N5391 DO-204AL JESD22-B102 J-STD-002 1N5393
Contextual Info: 1N5391 thru 1N5399 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

DO-15

Contextual Info: Formosa MS Axial Leaded General Purpose Rectifiers 1N5391 THRU 1N5399 List List. 1 Package outline. 2

1N5394

Abstract: 1n5393
Contextual Info: 1N5391 thru 1N5399 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC

1N5392

Abstract: 1N5393 1N5391 1N5399 DO-204AL JESD22-B102D J-STD-002B 1N5394 1N5396 1N5397
Contextual Info: 1N5391 thru 1N5399 Vishay General Semiconductor General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 1.5 A VRRM 50 V to 1000 V IFSM 50 A VF 1.4 V IR 5.0 A Tj max. 150 °C DO-204AL (DO-41) Features Mechanical Data • • • • Case: DO-204AL, molded epoxy body

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

88514

Abstract: 1N5397 1N5391 1N5399 DO-204AL JESD22-B102 J-STD-002 1N5392 1N5393 1N5394
Contextual Info: 1N5391 thru 1N5399 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Contextual Info: 1N5391 thru 1N5399 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

1N5394

Contextual Info: 1N5391 thru 1N5399 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds DO-204AL DO-41 • Component in accordance to RoHS 2002/95/EC

Contextual Info: Formosa MS Silicon Rectifier 1N5391 THRU 1N5399 List List. 1 Package outline. 2 Features. 2

diode 1n5392

Contextual Info: Formosa MS Axial Leaded General Purpose Rectifiers 1N5391 THRU 1N5399 List List. 1 Package outline. 2

1n5397

Abstract: 1N5391 1N5399 DO-204AL J-STD-002 88514 1N5392 1N5393 1N5394 1N5395
Contextual Info: 1N5391 thru 1N5399 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in

Contextual Info: 1N5391 thru 1N5399 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in

Contextual Info: Silicon Rectifier Formosa MS 1N5391 THRU 1N5399 List List. 1 Package outline. 2 Features. 2

Contextual Info: 1N5391 thru 1N5399 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in

DIODES BY250

Abstract: BY250 by250 diode N4001 diode n4005 n4007 diode IN5396 1N4001 diodes 1N4001 1N4005
Contextual Info: S E M I C O N D U C T O R S INC DTE D | fllBbbSG □ □ □ □ 2 5 3 ñ | • f - ô t - f S ' Silicon Rectifier Diodes The plastic material carries U/L recognition 94V-0. OPERATING AN D STORAGE TEMPERATURE - 5 0 to +175 °C BY250 Series: - 5 0 to +150°C

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPDP-151-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310)767-7958 1 1.5 AMP GENERAL PURPOSE SILICON DIODES MECHANICAL SPECIFICATION FEATURES SERIES 1N5391 - 1N5399 ACTUAL SIZE OF DO-15 PACKAGE

1N5390

Abstract: 1N4000 1n4004 1n4002 1N4000 silicon diodes 1N4007F 1N4005F 1n4000 a 1n4007 1n4000 sERIES DIODES RF2007 1N4006 FAGOR 2rf2001
Contextual Info: FAGOR ? Silicon rectifier diodes 1 Amp. to 2 Amps. The plastic material carries U L recognition 94V-0. A verage Rectified Current Type V AV (A) Peak Inverse Voltage at T a (°C) Repetitive Peak Forward Current Surge Forward Current Max. Forward Voltage Drop