Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1N5399 DIODE Search Results

    1N5399 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    1N5399 DIODE Price and Stock

    Diotec Semiconductor AG 1N5399

    Diode - DO-15 - 1000V - 1.5A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5399 28,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0212
    		Buy Now

    NTE Electronics Inc 1N5399

    Diode 1KV 2A 2-Pin DO-15
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5399 1,001
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.1367
    • 10000 $0.0997
    		Buy Now

    1N5399 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N5399

    Abstract: No abstract text available
    Text: 1N5391 . 1N5399 1N5391 . 1N5399 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2012-10-02 Nominal current Nennstrom ± 0.05 6.3 ±0 .1 Type 6 2.5 ±0.5 Ø3 Ø 0.8 ± 0.05 Dimensions - Maße [mm] 1.5 A Repetitive peak reverse voltage


    Original     		PDF 1N5391 1N5399 DO-15 DO-204AC UL94V-0 1N5391 1N5392 1N5393 1N5399

    1N5391

    Abstract: 1N5392 1N5393 1N5394 1N5395 1N5399 DO-204AC
    Text: 1N5391 . 1N5399 1N5391 . 1N5399 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2009-04-16 Nominal current Nennstrom 6.3±0.1 Type 62.5±0.5 Ø 3±0.05 Ø 0.8±0.05 Dimensions - Maße [mm] 1.5 A Repetitive peak reverse voltage Periodische Spitzensperrspannung


    Original     		PDF 1N5391 1N5399 DO-15 DO-204AC UL94V-0 1N5391 1N5392 1N5393 1N5394 1N5395 1N5399 DO-204AC

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 1N5391– 1N5399 1.5A 1.5A GENERAL DIODES TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz PRV I O@ T L V PK 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 50 100


    Original     		PDF 1N5391â 1N5399 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398

    1N5391-1N5399

    Abstract: 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399
    Text: LESHAN RADIO COMPANY, LTD. 1N5391– 1N5399 1.5A 1.5A GENERAL DIODES TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz PRV I O@ T L V PK 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 50 100


    Original     		PDF 1N5391­ 1N5399 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5391-1N5399 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399

    Untitled

    Abstract: No abstract text available
    Text: Silicon Rectifier Formosa MS 1N5391 THRU 1N5399 List List. 1 Package outline. 2 Features. 2


    Original     		PDF 1N5391 1N5399 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs.

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Silicon Rectifier 1N5391 THRU 1N5399 List List. 1 Package outline. 2 Features. 2


    Original     		PDF 1N5391 1N5399 1000hrs. MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2

    cross reference

    Abstract: 1N5393 1N5399 1N5391 1N5392 50V-1000V
    Text: Formosa MS Silicon Rectifier 1N5391 THRU 1N5399 List List. 1 Package outline. 2 Features. 2


    Original     		PDF 1N5391 1N5399 MIL-STD-750D METHOD-1051 125oC METHOD-1056 METHOD-4066-2 1000hrs. cross reference 1N5393 1N5399 1N5392 50V-1000V

    DO-15

    Abstract: No abstract text available
    Text: Formosa MS Axial Leaded General Purpose Rectifiers 1N5391 THRU 1N5399 List List. 1 Package outline. 2


    Original     		PDF 1N5391 1N5399 MIL-STD-750D METHOD-1036 JESD22-A102 METHOD-1051 METHOD-4066-2 1000hrs. DO-15

    diode 1n5392

    Abstract: No abstract text available
    Text: Formosa MS Axial Leaded General Purpose Rectifiers 1N5391 THRU 1N5399 List List. 1 Package outline. 2


    Original     		PDF 1N5391 1N5399 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. diode 1n5392

    diode IN 5397

    Abstract: 1N 5392 DIODE diode in 5392 T3 marking 1N 4000 diode diode 1n5392 diode 1n5397 1N5392-T3 1N5392-TB 1N5399
    Text: 1N5391 – 1N5399 WTE POWER SEMICONDUCTORS Pb 1.5A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-15, Molded Plastic


    Original     		PDF 1N5391 1N5399 DO-15, MIL-STD-202, DO-15 diode IN 5397 1N 5392 DIODE diode in 5392 T3 marking 1N 4000 diode diode 1n5392 diode 1n5397 1N5392-T3 1N5392-TB 1N5399

    diode in 5395

    Abstract: 1N5391 1N5399
    Text: Certificate TH97/10561QM 1N5391 - 1N5399 SILICON RECTIFIER DIODES DO - 41 PRV : 50 - 1000 Volts Io : 1.5 Amperes FEATURES : * * * * * * Certificate TW00/17276EM High current capability High surge current capability High reliability Low reverse current Low forward voltage drop


    Original     		PDF TH97/10561QM 1N5391 1N5399 TW00/17276EM DO-41 UL94V-O MIL-STD-202, diode in 5395 1N5399

    Untitled

    Abstract: No abstract text available
    Text: TH97/2478 1N5391 - 1N5399 SILICON RECTIFIER DIODES DO - 41 PRV : 50 - 1000 Volts Io : 1.5 Amperes FEATURES : * * * * * * IATF 0113686 SGS TH07/1033 TH09/2479 High current capability High surge current capability High reliability Low reverse current Low forward voltage drop


    Original     		PDF TH97/2478 1N5391 1N5399 TH07/1033 TH09/2479 DO-41 UL94V-O MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: 1N5391 – 1N5399 1.5A STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data       


    Original     		PDF 1N5391 1N5399 DO-15, MIL-STD-202, DO-15

    1N5391

    Abstract: 1N5399 A-405
    Text: LESHAN RADIO COMPANY, LTD. 1N5391 thru 1N5399 General Purpose Plastic Rectifiers 1.FEATURES * Plastic package has Underwriters Laboratories Reverse Voltage 50 to 1000V Forward Current 1.5A Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique


    Original     		PDF 1N5391 1N5399 DO-15, MIL-STD-750, DO-201AD DO-41 DO-15 26/tape 1N5399 A-405

    1n5399

    Abstract: CHARACTERISTICS DIODE 1N5399 diode 1n5397 1N5399 diode diode 1n5392 1N5391 diode 1N5399
    Text: 1N5391~1N5399 1.5A Rectifier Features 1. High current capability 2. Low reverse leakage current 3. Low forward voltage drop 4. Plastic material – UL recognition flammability classification 94V – 0 Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions


    Original     		PDF 1N5391 1N5399 1N5392 1N5393 1N5395 1N5397 1N5398 1N5399 1-Jan-2006 CHARACTERISTICS DIODE 1N5399 diode 1n5397 1N5399 diode diode 1n5392 diode 1N5399

    do-204al

    Abstract: 1N5391 1N5399 JESD22-B102D J-STD-002B 1N5392 1N5393 1N5394 1N5396 1N5398
    Text: 1N5391 thru 1N5399 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC


    Original     		PDF 1N5391 1N5399 2002/95/EC 2002/96/EC DO-204AL DO-41) DO-204AL, 08-Apr-05 do-204al 1N5399 JESD22-B102D J-STD-002B 1N5392 1N5393 1N5394 1N5396 1N5398

    1N5399 diode

    Abstract: 1n5399 diode 1n5397 diode 1N5399 1N5391 CHARACTERISTICS DIODE 1N5399
    Text: 1N5391~1N5399 1.5A Rectifier Features 1. High current capability 2. Low reverse leakage current 3. Low forward voltage drop 4. Plastic material – UL recognition flammability classification 94V – 0 Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions


    Original     		PDF 1N5391 1N5399 1N5392 1N5393 1N5395 1N5397 1N5398 1N5399 1-Jan-2006 1N5399 diode diode 1n5397 diode 1N5399 CHARACTERISTICS DIODE 1N5399

    1N5390

    Abstract: diode in 5392 1N5391 1N5399
    Text: 1N5391 . 1N5399 1.5 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1000 V. Current 1.5 A. at 70°C. 6.35 ± 0.2 58.5 min. • Low cost Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.


    Original     		PDF 1N5391 1N5399 DO-15 1N5390 1N5390 diode in 5392 1N5391 1N5399

    1N5394

    Abstract: 1n5393
    Text: 1N5391 thru 1N5399 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC


    Original     		PDF 1N5391 1N5399 DO-204AL DO-41) 2002/95/EC 2002/96/EC DO-204AL, 08-Apr-05 1N5394 1n5393

    diode 1n5397

    Abstract: 1N5392
    Text: 1N5391 – 1N5399 WTE POWER SEMICONDUCTORS Pb 1.5A STANDARD DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: DO-15, Molded Plastic


    Original     		PDF 1N5391 1N5399 DO-15, MIL-STD-202, DO-15 diode 1n5397 1N5392

    BAI59

    Abstract: B40 35-10 IN5345B Diodes In4007 HVR062 IN4007F RF2007 B40C3700-2200 b40c2000 rf2001
    Text: FAGOR ^ NUMERICAL INDEX TRANSIENT VOLTAGE SUPPRESSOR DIODES RECTIFIER DIODES Plastic Case IN4007F. 1N4001F. IN4007 . 1N4001 . P513 . BY 133 . 1N5399 . 1N5391 . RF2007 . RF2001 . BY255 .


    OCR Scan     		PDF IN4007F. 1N4001F. IN4007 1N4001 1N5399 1N5391 RF2007 RF2001 BY255 BY251 BAI59 B40 35-10 IN5345B Diodes In4007 HVR062 IN4007F RF2007 B40C3700-2200 b40c2000 rf2001

    1N4007 sma

    Abstract: 1N5819 SMA 1N4007 SMB 1N5822 SMA 1N4004 SMA 1N4004 SMB 1n4000 sERIES DIODES ES2D B3 1N5822 SMB 1N5819 SMB
    Text: § BRIDGE RECTIFIERS & DIODES General Purpose Diodes Series Voltage l(AV 50 200 100 300 400 500 600 1N4004 800 Outline 1000 1N4000 1 1N4001 1N4002 1N4003 1N4005 1N4006 1N4007 DO-41 1N5391 1.5 1N5391 1N5392 1N5393 1M5394 1N5395 1N5396 1N5397 1N5398 1N5399


    OCR Scan     		PDF 1N4000 1N5391 1N5400 1N4001 PX6A01 1N4002 1N5392 1N5401 1N4007 sma 1N5819 SMA 1N4007 SMB 1N5822 SMA 1N4004 SMA 1N4004 SMB 1n4000 sERIES DIODES ES2D B3 1N5822 SMB 1N5819 SMB

    Untitled

    Abstract: No abstract text available
    Text: DIOTEC ELECTRONICS CORP. Data Sheet No. GPDP-151-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310)767-7958 1 1.5 AMP GENERAL PURPOSE SILICON DIODES MECHANICAL SPECIFICATION FEATURES SERIES 1N5391 - 1N5399 ACTUAL SIZE OF DO-15 PACKAGE


    OCR Scan     		PDF GPDP-151-1B DO-15 1N5391 1N5399 1N5393 1N5395 1N5397 1N5398

    IN5391

    Abstract: 1N5390
    Text: 1N5391 . 1N5399 FAGOR ^ 1.5 Amp. Silicon Rectifier Diodes Dimensions in mm. sf DO-15 Plastic o« a ill_— 6,-35 ±0.2 5 8 .5 Voltage 50 to 1.000 V. Current 1.5 A. at 70°C. 11- 0.5 Mounting instructions 1 . Min. distance from body to soldering point,


    OCR Scan     		PDF 1N5391 1N5399 DO-15 1N5390 IN5391