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    1N5719 Search Results

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    1N5719 Price and Stock

    Broadcom Limited 1N5719

    RF DIODE PIN 150V 250MW
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    MACOM 1N5719-54

    Diode PIN Attenuator/Switch 100V 2-Pin ODS-54
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    Verical 1N5719-54 90 3
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    Bristol Electronics 1N5719-54 683
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    Richardson RFPD 1N5719-54 90 1
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    Hewlett Packard Co JANTX1N5719

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    Bristol Electronics JANTX1N5719 246
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    Hewlett Packard Co 1N5719

    PIN DIODE,SINGLE,150V V(BR),AXIAL-4
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    Quest Components 1N5719 1
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    1N5719 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N5719 Advanced Semiconductor Silicon PIN diode Original PDF
    1N5719 Agilent Technologies DIODE PIN ATTENUATOR/SWITCH 150V Original PDF
    1N5719 Avago Technologies Axial lead glass packaged PIN diodes Original PDF
    1N5719 Broadcom Discrete Semiconductor Products - Diodes - RF - DIODE PIN GEN PURP SW 150V AXIAL Original PDF
    1N5719 Hewlett-Packard Diode and Transistor Data Book 1980 Scan PDF
    1N5719 Hewlett-Packard Pin Diodes for RF Switching and Attenuating Scan PDF
    1N5719 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5719 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N5719 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF

    1N5719 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N5719

    Abstract: No abstract text available
    Text: 1N5719 SCHOTTKY DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKA. Page 1 of 1 Enter Your Part # Home Part Number: 1N5719 Online Store 1N5719 Diodes SCHOTTKY DIODE IN HERMETIC CERAMIC SURFACE Transistors MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS Integrated Circuits


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    PDF 1N5719 1N5719 com/1n5719

    1N5719 JANTX

    Abstract: 1N5719 JAN 1N5719 JANTX 1N5719
    Text: NOTICE OF CANCELLATION INCH-POUND MIL-PRF-19500/443B NOTICE 2 11 June 2002 SUPERSEDING NOTICE 1 30 August 2001 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE 1N5719 JAN, JANTX AND JANTXV MIL-PRF-19500/443B, dated 2 July 1999, is hereby canceled. Future acquisition for this material should refer to


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    PDF MIL-PRF-19500/443B 1N5719 MIL-PRF-19500/443B, 1N5719 JANTX 1N5719 JAN 1N5719 JANTX 1N5719

    1N5767

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 U.SA PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features


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    PDF 1N5719, 1N5767, IN5767 1N5767

    1N5767

    Abstract: IN5719 1nxxxx diode 5082-XXXX
    Text: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications Features These general purpose switching diodes are intended for low power switching applications such as RF


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    PDF 1N5719, 1N5767, 1N5712 5082-3xxx T25/1N57xx 1N57xx 5082-3xxx/ 1N57xx 5968-7182EN 1N5767 IN5719 1nxxxx diode 5082-XXXX

    IAM-81008

    Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


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    PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 IAM-81008 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800

    diode 5082-3077

    Abstract: IN5719 1N5767 5082-3039 diode 5082-3080 1N5 diode 1N5719 F 5082 1N5712 RS-296-D
    Text: PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications


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    PDF 1N5719, 1N5767, IN5719 5082-xxxx 5082-xxxx 1N5712 5967-5812E 5968-7182E diode 5082-3077 IN5719 1N5767 5082-3039 diode 5082-3080 1N5 diode 1N5719 F 5082 1N5712 RS-296-D

    1N5719

    Abstract: No abstract text available
    Text: TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 1N5719 PACKAGE STYLE 01 .075(1.9051 .065(1.651) DESCRIPTION: 1.0 MIN (254) 2 PLACES 1N5719 is a Silicon PIN Diode Designed for General Purpose


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    PDF 1N5719 The1N5719 100mA 1N5719

    Untitled

    Abstract: No abstract text available
    Text: 1N5719+JANTX Diodes General Purpose PIN Diode Military/High-RelY Volt Req. V 150 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.1.25 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.250f Carrier Lifetime (S)100n @I(F) (test) (A)50m @I(R) (A) (Test Condition)


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    PDF 1N5719

    1N5719

    Abstract: diode 5082-3077
    Text: PIN Diodes Reliability Data 1N5719 5082-3001 5082-3039 5082-3077 Description For applications requiring component reliability estimation, Hewlett-Packard provides reliability data for all families of devices. Data is initially compiled from reliability tests run prior to


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    PDF 1N5719 MIL-S-19500 DOD-HDBK-1686 1N5719 diode 5082-3077

    5082-3077

    Abstract: 1N5767 2101 5082-3081 glass 1N5719 HPND-0001 HPND-0002 5082-3039 5082-3188
    Text: RF Non-Surface Mount PIN Diodes Glass Axial Lead, Beam Lead, Chip, Stripline Part Number CT Max. pF 5082-3001 5082-3039 1N5719 5082-3077 5082-3188 5082-3080 1N5767 5082-3379 5082-3081 HPND-0001 HPND-0002 0.25 0.25 0.3 0.3 1 0.4 0.4 0.4 0.4 0.2 0.2 RS Max.


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    PDF 1N5719 1N5767 HPND-0001 HPND-0002 5082-3077 1N5767 2101 5082-3081 glass 1N5719 HPND-0001 HPND-0002 5082-3039 5082-3188

    5082-2830

    Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


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    PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 5082-2830 IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870

    1N5767

    Abstract: DIODE T25 in5719 1nxxxx diode 1N5712 1N5719 RS-296-D digital phase shifters 1N5 diode 5082-XXXX
    Text: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications These general purpose switch­ing diodes are intended for low power switching applications such as RF ­duplexers,


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    PDF 1N5719, 1N5767, 1N5712 5082-3xxx T25/1N57xx 1N57xx 5082-3xxx/ 1N57xx 5989-3339EN 1N5767 DIODE T25 in5719 1nxxxx diode 1N5712 1N5719 RS-296-D digital phase shifters 1N5 diode 5082-XXXX

    in5719

    Abstract: DIODE T25 5082-XXXX 5082-3001 1N5719 diode 5082-3077 diode 5082- 3039 5082-3080 1N57xx 1Nxx
    Text: Agilent 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Features • Low Harmonic Distortion • Large Dynamic Range Description/Applications These general purpose switching


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    PDF 1N5719, 1N5767, 5082-3xxx/ 1N57xx 5968-7182E 5989-3339EN in5719 DIODE T25 5082-XXXX 5082-3001 1N5719 diode 5082-3077 diode 5082- 3039 5082-3080 1N57xx 1Nxx

    1N5719

    Abstract: pin diode
    Text: 1N5719 SILICON PIN DIODE PACKAGE STYLE 01 DESCRIPTION: 1N5719 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz. MAXIMUM RATINGS IF 100 mA VR 150 V PDISS 250 mW @ TA = 25 C TJ -65 C to +200 C


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    PDF 1N5719 The1N5719 1N5719 pin diode

    Untitled

    Abstract: No abstract text available
    Text: 1N5719+JAN Diodes General Purpose PIN Diode Military/High-RelY Volt Req. V 150 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.1.25 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.250f Carrier Lifetime (S)100n @I(F) (test) (A)50m @I(R) (A) (Test Condition)


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    PDF 1N5719

    AT-41486

    Abstract: 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


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    PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 AT-41486 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862

    Untitled

    Abstract: No abstract text available
    Text: 1N5719 asi SILICON PIN DIODE PACKAGE STYLE 01 DESCRIPTION: T he1N 5719 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz. MAXIMUM RATINGS If 100 mA Vr 150 V P diss 250 mW @ Ta = 25 °C Tj -65 to +200 °C


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    PDF 1N5719

    JANTX1N5719

    Abstract: Diode LT 443 1N5719 1N5719 JAN 1N5719 JANTX
    Text: HEWLETT g PIN SWITCHING DIODE MILITARY APPROVED MIL-S-19500/443 PACK ARD COMPONENTS JAN 1N5719 1N5719 Features PRODUCTS LARGE DYNAMIC RANGE LOW HARMONIC DISTORTION Maximum Ratings at The JAN Series 1N5719 is a planar passivated silicon PIN diode designed fo r use in RF sw itching circuits. These


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    PDF MIL-S-19500/443 1N5719 JANTX1N5719 MlL-S-19500/443) 1071E lo-70mAdc, 70mAdc, -120V MIL-STD-202, JANTX1N5719 Diode LT 443 1N5719 JAN 1N5719 JANTX

    Untitled

    Abstract: No abstract text available
    Text: 1N5719 asii SILICON PIN DIODE PACKAGE STYLE 01 DESCRIPTION: The 1N5719 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz. MAXIMUM RATINGS If 1OO mA Vr 15O V Pd i s s 25O mW @ Ta = 25 °C Tj -65 to +2OO 0C


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    PDF 1N5719 1N5719 70C/mW

    Untitled

    Abstract: No abstract text available
    Text: Whpl H E W LE T T mL'rtà PA C K A R D PIN Diodes Reliability Data 1N5719 5082-3001 5082-3002 5082-3039 5082-3077 HPND-4165 HPND-4166 Description Applications For applications requiring component reliability estima­ tion, Hewlett-Packard provides reliability data for all families of


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    PDF 1N5719 HPND-4165 HPND-4166 MIL-S19500

    HP 5082-3081

    Abstract: diode 5082-3168 HPND-4165 HP 5082-3168 vhf antenna mtbf hp 3042 1N5767 5082-3168 diode 5082-3001 5082-3042
    Text: H E W L E T T P A CK A RD COMPONENTS 5082 3001/02 HPND-4165/66 5082-3039 1N5719 5082-3042/43 5082-3077 5082-3080 (1N5767) 5082-3081 5082-3168/88 PIN DIODES FOR RF SWITCHING AND ATTENUATING Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE


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    PDF HPND-4165/66Â 1N5719) 1N5767) curr080, IN5719 HP 5082-3081 diode 5082-3168 HPND-4165 HP 5082-3168 vhf antenna mtbf hp 3042 1N5767 5082-3168 diode 5082-3001 5082-3042

    IN5767

    Abstract: HP 5082-3081 HPND-4165 EN 4165 5082-3042 1N5719 1N5767 HPND-4166 IN5719 RS-296-D
    Text: PIN DIODES FOR RF SWITCHING AND ATTENUATING 1N5719 IN5767 5082-3001/02 5082-3039 5082-3042/43 5082-3077 5082-3080 5082-3081 5082-3168/88 5082-3379 HPNO-4165/66 Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE LOW CAPACITANCE LOW TEMPERATURE COEFFICIENT


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    PDF 1N5719 1N5767 HPND-4165/66 HPND-4166. IN5767 HP 5082-3081 HPND-4165 EN 4165 5082-3042 HPND-4166 IN5719 RS-296-D

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    I-3080

    Abstract: No abstract text available
    Text: GLASS PACKAGED PIN DIODES FOR RF SWITCHING AND ATTENUATING metelics CORPORATION 1 FEATURES • Low Series Resistance • Low C apacitance • Fast Switching and Current Controlled Attenuator Types • Controlled Resistance Curves M AXIM UM RATINGS Total Power Dissipation . . . . 2 5 0 m W a t + 2 5 ° C


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    PDF MPN-4166 I-3080