1N5811 E Search Results

1N5811

Contextual Info: 1N5811 a s ii SILICON RECTIFIER-VERY FAST SWITCHING DESCRIPTION: PACKAGE STYLE ASI- 420 The 1N5811 is Designed for General Purpose Very Fast Switching Applications. MAXIMUM RATINGS Io If = 6.0 A avg @ —l = 75 °C/ L = 3/8" ^ Rwm 150 V Tj -65 0C to +175 0C

Contextual Info: 1N5811 asi SILICON RECTIFIER-VERY FAST SWITCHING DESCRIPTION: PACKAGE STYLE A S I-420 The 1N5811 is Designed for General Purpose Very Fast Switching Applications. f 1 0 MIN - 2 5 .4 tao <4.6!. .m «.si MAXIMUM RATINGS lo If - 6.0 A (avg) @ Tl = 75 °C/ L = 3/8"

JANTXV1N5811US

Abstract: JANS1N5811US JANTX1N5811US JANS1N5811 SS5811US 1N5811US JANS sensitron jan1n58 1N5809 equivalent jan1n5811 1N5809US
Contextual Info: 1N5807/US, 1N5809/US, 1N5811/US Standard ULTRAFAST RECOVERY RECTIFIERS TECHNICAL DATA A VAILABLE AS DATA SHEET 127, REV. H.4 JAN JANTX JANTXV JAN S JAN EQUIVALENT: SJ58xx/US*

in5806

Abstract: 1N5815 Diode IN5809 IN5802 1N5812 diode
Contextual Info: RECTIFIERS 1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 High Efficiency, ESP, 2.5 Amp to 20 Amp FEATURES • Exceptional Efficiency • Low Forward Voltage • Extremely Fast Reverse Recovery Time • Extremely Fast Forward Recovery Time • High Surge • Small Size

Contextual Info: 1N5807 thru 1N5811 Microsemi Corp. f The Otode ex p els SANTA ANA, CA ^☆JANSÍ SCOTTSDALE, A Z For more inform ation call: 714 979-8220 ULTRA FAST RECTIFIERS FEA TU R ES • M ICRO M INIATURE PACKAGE • VO IDLESS HERMETICALLY SEALED GLASS PACKAGE • TRIPLE LAYER PASSIVATION

1N5807

Abstract: 1N5809 1N5811 JANTX 1N5811
Contextual Info: 1N5807 / US 1N5809 / US 1N5811 / US SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 127, REV G JAN JANTX JANTXV SJ SX SV HIGH EFFICIENCY AXIAL LEAD RECTIFIERS DESCRIPTION: 50 / 100 / 150 VOLT, 3.0 AMP, 30 NANOSECOND RECTIFIER MAX. RATINGS / ELECTRICAL CHARACTERISTICS

Contextual Info: Rectifier Diode Chips Ultrafast Recovery CD5807, CD5809, CD5811 Features • Available as JANHCE and JANKCE per MIL-PRF-19500/477 • Electrically equivalent to 1N5807, 1N5809 and 1N5811 • Passivated junction • Compatible with all wire bonding and die attaché techniques

5807

Abstract: 1N5807
Contextual Info: 1N5807/US, 1N5809/US, 1N5811/US Standard ULTRAFAST RECOVERY RECTIFIERS TECHNICAL DATA DATA SHEET 127, REV. H.5 AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT *

1N5811US JANS sensitron

Abstract: SS5811US 1N5811 jan1n5811 1N5811 power rating
Contextual Info: 1N5807/US, 1N5809/US, 1N5811/US Standard ULTRAFAST RECOVERY RECTIFIERS TECHNICAL DATA DATA SHEET 127, REV. H.4 AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT *

Contextual Info: ] | ^ / 71i = - p r s r = a n n ll J v y ü T r L ^ l S L r n J RECTIFIER, up to 150V,6A,30ns January 7, 1998 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com A X IA L LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE * 1N5807 1N5809 1N5811

Contextual Info: Rectifier Diode Chips Ultrafast Recovery CD5807, CD5809, CD5811 Features • Available as JANHCE and JANKCE per MIL-PRF-19500/477 • Electrically equivalent to 1N5807, 1N5809 and 1N5811 • Passivated junction • Compatible with all wire bonding and die attach techniques

Contextual Info: DIGITRON SEMICONDUCTORS 1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 RECTIFIERS HIGH EFFICIENCY 2.5 AMP TO 20 AMP MAXIMUM RATINGS Peak Inverse Voltage 2.5 Amp Series 6 Amps Series 20 Amp Series 50V 1N5802 1N5807 1N5812 75V 1N5803 1N5808 1N5813 100V 1N5804 1N5809

BKC Semiconductors

Contextual Info: 6 Amp Voidless Fast Switching Rectifiers 1N5807 thru 1N5811 Applications Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where performance, surge and small footprint are important. These rectifiers are ideal for use in aircraft or satellite power supplies.

Contextual Info: 1N 5807 thru Micro/semi Corp. ^ 1N5811 MV ' Thp d io de ex p erts ☆JANSÍ SANTA A N A, CA F o r m o re in f o r m a ti o n call: 714 9 7 9 -8 2 2 0 ULTRA FAST RECTIFIERS FEATURES • M ICRO MINIATURE PACKAGE • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE

1N5811 power rating

Abstract: IFM40 L0525
Contextual Info: SENSITRON SEMICONDUCTOR 1N5807 / US thru 1N5811 / US TECHNICAL DATA DATA SHEET 127, REV.H JAN JANTX JANTXV SJ SX SV HERMETIC AXIAL / MELF HIGH EFFICIENTCY RECTIFIER • Hermetic, non-cavity glass package • Metallurgically bonded • Physical dimensions: Axial lead similar to E package and surface mount similar to D-5B

Contextual Info: RECTIFIER, up to 150V, 6A, 30ns 3804 WEB:http://www.semtech.com lin MECHANICAL ec om po ne nt s. co m TEL:805-498-2111 FAX:805-498- 1N5807 1N5809 1N5811 on G112 DIM N Dimensions Millimeters Inches Note MIN MAX MIN MAX A 2.92 3.61 .115 0.142 - B 22.9 33.0 0.90

1N5808US

Abstract: JTX 1N5811-US DSAIH0002550
Contextual Info: Square ended SMD 6 Amp Fast Rectifiers 1N5807US thru 1N5811 US Hard GlassTungsten MELF "B" Package Applications For use in hostile environments such as military and aerospace. Used where performance, surge and small footprint are important These rectifiers are ideal for use in aircraft or satellite power supplies.

IN5811

Abstract: IN5810 1N5811 100S 1N5807 1N5808 1N5809 1N5810
Contextual Info: rfHV 1N5807 thru 1N5811 K •1 Microsemi Corp. FEA T U R ES • • • • • • • • RECTIFIERS Microm iniature package. V oid le ss hermetically sealed g la s s package. Triple layer passivation. M e tallu rgical^ bonded. Ultra fast recovery. H igh su rge capability and extrem ely stable characteristics.

1n5811

Abstract: 1N5807 1n5811 e
Contextual Info: RECTIFIER, up to 150V, 6A, 30ns TEL:805-498-2111 FAX:805-498- 1N5807 1N5809 1N5811 3804 WEB:http://www.semtech.com MECHANICAL G112 Dimensions DIM N Millimeters Inches Note MIN MAX MIN MAX A 2.92 3.61 .115 0.142 - B 22.9 33.0 0.90 1.30 - C 3.3 7.62 .130 0.3

1N5811

Abstract: 1N5807 1N5808 1N5809 1N5810
Contextual Info: Micro/semi Corp. 1N5807 thru 1N5811 W M x fm V ^ Thp d'Ode e *p e rís ^JANSÍ SANTA ANA, CA F o r m o re in f o r m a ti o n call: 714 979-8220 ULTRA FAST RECTIFIERS FEATURES • M ICRO MINIATURE PACKAGE • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE • TRIPLE LAYER PASSIVATION

1N5811

Abstract: 1N5811 MICROSEMI 1N5807 JANTXV 1N5807-1N5811 1N5807 1N5807US 1N5809 1N5811US
Contextual Info: 1N5807 thru 1N5811 VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-19500/477 and is ideal for high-reliability applications where a failure cannot be tolerated. These industryrecognized 6.0 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts

1N5606

Abstract: 1N5815 Diode 1N5816 diode IN5803 1N5802-1N5606 1N5815 IN5802 1N5810 diode unitrode 1n5806 1N5802
Contextual Info: 1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 RECTIFIERS High Efficiency, ESP, 2.5 Amp to 20 Amp FEATU RES DESCR IPTIO N • • • • • • • • T h is se rie s o f H igh E ffic ie n cy Power R e c tifie rs a llo w s c ir c u it de sig n e rs to d esig n h ig h cu rren t, h ig h fre q u e n cy s u p ­

1N589

Abstract: IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent
Contextual Info: MIL SPECS 44E » The documentation and proc*»» conversion m w r M necessary to comply with this revision shall be completed by 25 Apr 93. • □□□□155 0032612 7 ■ M I L S 1- 1 IINCH-POUNDj I . — I | j j ML-S-19S00/477B 25 January 1993

v5807

Abstract: mil-prf-19500/477 MIL-S-19500/477 1N5811 1N5807 1N5809 JANHCE1N58011 JANHCE1N5807 JANHCE1N5809 JANKCE1N58011
Contextual Info: 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 JANHCE and JANKCE JANHCF and JANKCF FEATURES: • Chip Outline Dimensions: 68 x 68 mils • Chip Thickness: 8 to 12 mils • Anode Metallization: Aluminum