1N5817 EQUIVALENT Search Results

FULL WAVE RECTIFIER CIRCUITS

Abstract: 1N5818 1N5817 1N5819
Contextual Info: MOTOROLA Order this document by 1N5817/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifiers 1N5817 1N5818 1N5819 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,

1n5819 equivalent

Abstract: 1n5819
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1n5819 equivalent

Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5817

Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

datasheets diode 1n5818

Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5817

Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1n5819 equivalent

Abstract: 1N5817-19 1N5817 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5817

Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

"Power Diode"

Abstract: 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS 10 Ampere Schottky bridge 1N5817 diode FULL WAVE RECTIFIER CIRCUITS Full wave rectifier datasheet 1N5818RLG 1N5819 1N5817 1N5817G
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5817

Abstract: 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG 1N5819 Equivalent for 1N5819
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

Contextual Info: 1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Avalanche capability specified A K DO-41 Description Axial Power Schottky rectifier suited for Switch

1n5819

Contextual Info: 1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Avalanche capability specified A K DO-41 Description Axial Power Schottky rectifier suited for Switch

MBR130P

Abstract: MBR120P
Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA 1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P AXIAL LEAD RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-toconsr"jction with oxide passivation and metal overlap contact.

1N5822 SS34

Abstract: equivalent sb560 sb140 equivalent sb360 equivalent sb550 equivalent SS16 SMB T0263AB 1N5822 SMB 1n5822 do 214ab SB160 equivalent
Contextual Info: SCHOTTKY RECTIFIERS 10 A 0.6 CASE TY P E MPG06 i.a DO-5!04AL DO-213AB M ELF DO-214AC SMA 2.0 3.0 DO-214AA SMB DO-201 AD f I 1 \ 1 i • V rrm (VOLTS) 20 SB020 SB120 1N5817 SGL41-20 l!lBYM13-20 SS 12 SU 2 SS22 SL22 SB320 30 SB030 SB130 1N5818 SGL41-30 :iBYM13-30

MBR140P

Abstract: BR115P MBR130P MBR120P mbr115
Contextual Info: MOTOROLA SC -CDIODES/OPTO> 15E D 1 b3b75SS D07T573 1 T -0 3 MBR115P 1N5817 1N5818 MBR120P 1N5819 MBR130P MBR140P MOTOROLA SEM ICONDUCTOR TECHNICAL DATA A X I A L L E A D R E C T IF IE R S . . . employing the S ch o ttky Barrier principle in a large area metal-tosilicon power diode. State-of-the-art geometry features epitaxial

max489 regulator

Abstract: MAX490 equivalent 4N25 PHILIPS 213CT050 213CT050-3B7 74HC04 NOT GATE datasheet 74HC04 12v center tap transformer MAX253 MAX253CSA
Contextual Info: 19-0226; Rev 0; 1/94 Transformer Driver for Isolated RS-485 Interface _Applications _Features ♦ Power-Supply Transformer Driver for Isolated RS-485/RS-232 Data-Interface Applications ♦ Single +5V or +3.3V Supply

213CT050-3B7

Abstract: 4N25 PHILIPS et 78L05 PC410 equivalent PC357T 74HC04 application note max489 regulator 74HC04 MAX252 74HC04 NOT GATE datasheet
Contextual Info: 19-0226; Rev 2; 4/10 Transformer Driver for Isolated RS-485 Interface _Features The MAX253 monolithic oscillator/power-driver is specifically designed to provide isolated power for an isolated RS-485 or RS-232 data interface. The device

213CT050-3B7

Abstract: 78l05 sot-23 4N25 PHILIPS 74hc04 oscillator MAX485 equivalent 74HC04 oscillator application note max489 regulator primary center tapped power transformer 74HC04 NOT GATE datasheet 213CT050
Contextual Info: 19-0226; Rev 0; 1/94 Transformer Driver for Isolated RS-485 Interface _Applications _Features ♦ Power-Supply Transformer Driver for Isolated RS-485/RS-232 Data-Interface Applications ♦ Single +5V or +3.3V Supply

74HC04 oscillator

Abstract: 213CT050 213CT050-3B7 74HC04 oscillator application note 74HC04 74HC04 NOT GATE datasheet 74hco4 PC357T SHARP MAX253 max489 regulator
Contextual Info: 19-0226; Rev 1; 8/09 Transformer Driver for Isolated RS-485 Interface _Features The MAX253 is a monolithic oscillator/power-driver, specifically designed to provide isolated power for an isolated RS-485 or RS-232 data interface. It

74HC04

Abstract: MAX253CPA transistor 5ct 12v to 220 v transformer turns ratio MAX253 MAX253CSA MAX480 MAX253EPA MAX253ESA centertapped transformer
Contextual Info: 19-0226; Rev 0; 1/94 Transformer Driver for Isolated RS-485 Interface _Applications _Features ♦ Power-Supply Transformer Driver for Isolated RS-485/RS-232 Data-Interface Applications ♦ Single +5V or +3.3V Supply

Contextual Info: MAX253 LE AVAILAB Transformer Driver for Isolated RS-485 Interface _Features The MAX253 monolithic oscillator/power-driver is specifically designed to provide isolated power for an isolated RS-485 or RS-232 data interface. The device

PC410 equivalent

Contextual Info: MAX253 LE AVAILAB Transformer Driver for Isolated RS-485 Interface The MAX253 monolithic oscillator/power-driver is specifically designed to provide isolated power for an isolated RS-485 or RS-232 data interface. The device drives a center-tapped transformer primary from a 5V