1N5819 GENERAL SEMICONDUCTOR Search Results

Contextual Info: 1N5819 asi SCHOTTKY RECTIFIER PACKAGE STYLE D O -41 Î DESCRIPTION: t . O 25 (25.4 The 1N5819 is a General Purpose Schottky Rectifier Designed for use in Switching Power Supply Applications. yih MIN J .107 (2.7Ì .080(2.0) .205(5.2) .160(4.1) MAXIMUM RATINGS

UF4007 SMD

Abstract: 1N5822 SMD smd UF4007 SS34 DO-214AC 1n5408 smd SMD DO-214AC SMA UF4007 smd package P6KE33a 1N5822 SMD PACKAGE 1N4004 SMD
Contextual Info: General Semiconductor Rectifiers and Voltage Suppressors Schottky Rectifiers Mfr.Õs Type IF AV (A) 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 SS14 SS16 SGL41-40 SS34 MBRB1045 MBRB1060 MBRB2045CT MBR745 MBR1045 MBR1060 MBR1645 MBR2045CT MBR2545CT MBR3045PT

Contextual Info: 1N5817, 1N5818, 1N5819 www.vishay.com Vishay General Semiconductor Schottky Barrier Plastic Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation

Contextual Info: 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41

1N5819 General Semiconductor

Abstract: 1N5817 1N5818 1N5819 DO-204AL JESD22-B102D J-STD-002B
Contextual Info: 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41

1N5817

Abstract: 1N5818 1N5819 DO-204AL JESD22-B102 J-STD-002 1N5819 General Semiconductor 1N5819 Vishay
Contextual Info: 1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41

1N5817 diode

Abstract: datasheets diode 1n5819 1/1N5819 1n5819 data sheet datasheets diode 1n5818 1N5817 1N5818 1N5819 DO-204AL JESD22-B102D
Contextual Info: 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41

specifications on 1n5818

Contextual Info: 1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41

1N5817 MELF

Abstract: 1n5819 melf vishay melf MELF Package 1N5817 1N5818 1N5819 DO-204AL melf Schottky glass MELF dimensions
Contextual Info: 1N5817 thru 1N5819 Vishay Semiconductors formerly General Semiconductor Schottky Barrier Rectifiers Features DO-204AL DO-41 • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • For use in low voltage high frequency inverters, free

1n5819 melf

Abstract: melf Schottky glass VISHAY 1N5819 vishay melf 1N5817 1N5818 1N5819 DO-204AL 1N5817 MELF
Contextual Info: 1N5817 thru 1N5819 Vishay Semiconductors formerly General Semiconductor Schottky Barrier Rectifiers Features DO-204AL DO-41 • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • For use in low voltage high frequency inverters, free

1n5819 vishay make

Contextual Info: 1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106

1N5817 MELF

Abstract: 1n5819 melf MELF dimensions
Contextual Info: 1N5817 thru 1N5819 Vishay Semiconductors formerly General Semiconductor Schottky Barrier Rectifiers Features DO-204AL DO-41 • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • For use in low voltage high frequency inverters, free

Contextual Info: 1N5817 thru 1N5819 Vishay Semiconductors formerly General Semiconductor Schottky Barrier Rectifiers Features DO-204AL DO-41 • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • For use in low voltage high frequency inverters, free

1N5817

Abstract: 1N5818 1N5819 DO-204AL J-STD-002
Contextual Info: 1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106

Contextual Info: 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers Major Ratings and Characteristics IF AV 1.0 A VRRM 20 V, 30 V, 40 V IFSM 25 A VF 0.45 V, 0.55 V, 0.60 V Tj max. 125 °C DO-204AL (DO-41) Features Mechanical Data • • • •

1N5818

Contextual Info: 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers Major Ratings and Characteristics IF AV 1.0 A VRRM 20 V, 30 V, 40 V IFSM 25 A VF 0.45 V, 0.55 V, 0.60 V Tj max. 125 °C DO-204AL (DO-41) Features Mechanical Data • • • •

EQUIVALENT BYD33D

Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and

Contextual Info: 一華半導體股份有限公司 LED DRIVER MOSDESIGN SEMICONDUCTOR CORP. M1910B/C HIGH BRIGHTNESS LED DRIVER GENERAL DESCRIPTION The M1910B/C is a PWM high-efficiency LED driver control IC. It allows efficient operation of High Brightness HB LEDs. The M1910B/C controls an external MOSFET at fixed switching frequency up to 300 kHz. The frequency can be programmed

Contextual Info: 1N5817 - 1N5819 Schottky Barrier Rectifier Features • • 1.0 ampere operation at TA = 90°C with no thermal runaway. For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-41 plastic case COLOR BAND DENOTES CATHODE

ac dc led constant current driver

Contextual Info: 一華半導體股份有限公司 LED DRIVER MOSDESIGN SEMICONDUCTOR CORP. M1910B/C HIGH BRIGHTNESS LED DRIVER GENERAL DESCRIPTION The M1910B/C is a PWM high-efficiency LED driver control IC. It allows efficient operation of High Brightness HB LEDs. The M1910B/C controls an external MOSFET at fixed switching frequency up to 300 kHz. The frequency can be programmed

BU4508DX equivalent

Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
Contextual Info: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

BT136-600E equivalent

Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent
Contextual Info: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.

1N5817

Abstract: 1N5818 1N5819
Contextual Info: 1N5817 - 1N5819 Schottky Barrier Rectifier Features • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-41 plastic case COLOR BAND DENOTES CATHODE

1N4001 zener diode

Abstract: LM2575-ADJ Car Battery 12V pulse charger diode 1n5819 1N4001 general diode sample schematic diagram 12v battery charger LM2575 step up converter 12V DC to 19V dC converter schematic diagram schematic diagram 24V NiMh charge controller 12V cell phone charger circuit diagram
Contextual Info: Order this document by AN1593/D Motorola Semiconductor Application Note AN1593 High Efficiency 1A Battery Charger Using the LM2575-ADJ and MC33341 PRELIMINARY INFORMATION by Ondrej Pauk Industrial System Application Laboratory, Roznov CZ Figure 1. High Efficiency Battery Charger Demonstration Board.