1N5819-1 JAN Search Results

Contextual Info: 1N5819-1 and 1N5819UR-1 Standard HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 193, REV. C.2 AVAILABLE AS 1N5819-1, 1N5819UR-1 JAN EQUIVALENT: SJ5819-1/SJ5819UR-1* SV5819-1/SV5819UR-1* SX5819-1/SX5819UR-1*

1N5819

Abstract: 1N5819-1 1N6759 1N6760 1N6761 DSB1A100 DSB1A20 DSB1A30 DSB5817 DSB5818
Contextual Info: • 1N5819-1 AVAILABLE IN JAN.JANTX. JANTXV. AND JANS • 1 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION 1N5819 and DSB5817 and DSB5818 and 1N6759 thru 1N6761 and DSB1A20 thru DSB1A100

1N5B19

Abstract: DSB1A100 1N5819 1N5819-1 1N6759 1N6760 1N6761 DSB1A20 DSB5817 DSB5818
Contextual Info: • 1N5819-1 AVAILABLE IN JAN.JANTX, JANTXV. AND JANS • 1 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION 1N5819 and DSB5817 and DSB5818 and 1N6759 th ru 1N6761 and DSB1A20 th ru DSB1A100

Contextual Info: • 1N5819-1 AVAILABLE IN JAN,JANTX, JANTXV, AND JANS • 1 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION 1N5819 and DSB5817 and DSB5818 and 1N6759 thru 1N6761 and DSB1A20 thru DSB1A100

JANTX, JX, JAN, Schottky

Abstract: 1N5819 1N5819-1 1N6759 1N6760 1N6761 1N6761-1AVAILABLE DSB1A100 DSB1A20 DSB5817
Contextual Info: • 1N5819-1 AND 1N6761-1AVAILABLE IN JAN,JANTX, JANTXV, AND JANS PER MIL-PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N5819 and DSB5817 and DSB5818 and 1N6759 thru 1N6761 and DSB1A20 thru DSB1A100

JANTX, JX, JAN, Schottky

Abstract: 1N5819 1N6761-1AVAILABLE 1N5819-1 JANTX JANTX 1N6761 JANTX, JX, JAN 1N5819-1 1N6759 1N6760 1N6761
Contextual Info: • 1N5819-1 AND 1N6761-1AVAILABLE IN AND JANS PER MIL-PRF-19500/586 JAN,JANTX, JANTXV, • 1 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N5819 and DSB5817 and DSB5818 and 1N6759 thru 1N6761 and DSB1A20 thru DSB1A100

JANTX, JX, JAN, Schottky

Abstract: JANTX, JX, JAN JANTX 1N6761 VF01 1N5819-1 1N6761-1AVAILABLE DSB1A100 jantxv 1n5819 1N5819 1N6759
Contextual Info: • 1N5819-1 AND 1N6761-1AVAILABLE IN JAN,JANTX, JANTXV, AND JANS PER MIL-PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N6759 thru 1N6761 and DSB1A20 thru DSB1A100 and 1N5819 and DSB5817 and DSB5818

S1N5819

Abstract: 1a40d
Contextual Info: 1N5819-1 AVAILABLE IN JANTX AND JANTXV 1N5819 1 AMP SCHOTTKY BARRIER RECTIFIERS and DSB5817 and DSB5818 HERMETICALLY SEALED METALLURGICALLY BONDED -1 and DSB1A20 thru DSB1A70 DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS O p e ra tin g T e m p e ra tu re : -55' C to + 12 5 C

1N6761-1

Abstract: MICROSEMI 1N6761-1 1N5818-1
Contextual Info: 1N5818-1, 1N5819-1, 1N6759-1 – 1N6761-1 and DSB1A20 – DSB1A100 Available on commercial versions 1 Amp Schottky Barrier Rectifiers Qualified per MIL-PRF-19500/586 Qualified Levels*: JAN, JANTX, JANTXV and JANS DESCRIPTION This 1 Amp Schottky barrier rectifier is metallurgically bonded and offers military grade

1N5819 sensitron

Abstract: 1N5819UR-1 1N5819-1 DO-213AB
Contextual Info: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. C HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.

Contextual Info: DIGITRON SEMICONDUCTORS 1N5817-1N5819 1 AMP SCHOTTKY RECTIFIER MECHANICAL CHARACTERISTICS Characteristics Symbol Characteristics Value Storage temperature range TSTG Storage temperature range -55 to + 150°C Operating junction temperature range TJ Operating junction temperature

1n5819 melf

Abstract: 1N5819-1 JANTX 1N5819UR-1 MELF DL41 1N5819 1N5819-1 1.1N5819 DO-213AB Schottky Barrier Diode
Contextual Info: tSENSITRON 1N5819-1 1N5819UR-1 SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. A HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise

Contextual Info: • 1N5819 AVAILABLE IN JANHC AND JANKC • 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS • SILICON DIOXIDE PASSIVATED • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES CD5817 thru CD5819 and CD6759 thru CD6761 and CD1A20 thru CD1A100 MAXIMUM RATINGS

1N5819UR-1

Abstract: 1n5819 melf 1N5819-1 DO-213AB 1N5819UR1
Contextual Info: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. o All ratings are at TA = 25 C unless otherwise specified.

1N5819

Abstract: 1N6761 CD1A100 CD1A20 CD5817 CD5818 CD5819 CD6759 CD6760 CD6761
Contextual Info: • 1N5819 AND 1N6761 AVAILABLE IN JANHC AND JANKC PER MIL PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS • SILICON DIOXIDE PASSIVATED CD5817 thru CD5819 and CD6759 thru CD6761 and CD1A20 thru CD1A100 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,

CD5818

Abstract: 1N5819 CD1A20 CD1A30 CD1A40 CD1A50 CD1A70 CD5817 CD5819
Contextual Info: • 1N5819 AVAILABLE IN JAN “C” • 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS • SILICON DIOXIDE PASSIVATED • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES CD5817 thru CD5819 and CD1A20 thru CD1A70 MAXIMUM RATINGS Operating Temperature: -55°C to +125°C

Contextual Info: CD5817 • 1N5819 AVAILABLE IN JAN “C” thru • 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS CD5819 • SILICON DIOXIDE PASSIVATED • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES and CD1A20 thru CD1A70 MAXIMUM RATINGS Operating Tem perature: -55°C to +125°C

Contextual Info: • 1N5819 AND 1N6761 AVAILABLE IN JANHC AND JANKC PER MIL PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS • SILICON DIOXIDE PASSIVATED CD6759 thru CD6761 and CD1A20 thru CD1A100 and CD5817 thru CD5819 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,

1N6761

Abstract: 1N5819 CD1A100 CD1A20 CD5817 CD5818 CD5819 CD6759 CD6760 CD6761
Contextual Info: • 1N5819 AND 1N6761 AVAILABLE IN JANHC AND JANKC PER MIL PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS • SILICON DIOXIDE PASSIVATED CD5817 thru CD5819 and CD6759 thru CD6761 and CD1A20 thru CD1A100 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,

1N5819

Abstract: 1N6761 CD1A100 CD1A20 CD5817 CD5818 CD5819 CD6759 CD6760 CD6761
Contextual Info: • 1N5819 AND 1N6761 AVAILABLE IN JANHC AND JANKC PER MIL PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS • SILICON DIOXIDE PASSIVATED CD6759 thru CD6761 and CD1A20 thru CD1A100 and CD5817 thru CD5819 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,

Contextual Info: DO-41 Glass 1 Amp I • ' ~ Use Advantages 1N5819 HR Schottky Rectifier I HR j Low forward voltage drop. Consult factory for commercial part. Fast switching due to majority carrier conduction which results in high operating efficiencies because of low power loss.

Contextual Info: 1N5819 AVAILABLE IN JAN “C” 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS SILICON DIOXIDE PASSIVATED COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES CD5817 thru CD5819 and CD1A20 thru CD1A70 MAXIMUM RATINGS O p e ra tin g T e m p e ra tu re : -5 5 ‘ C to + 1 2 5 :>C

smd package 1N5819

Abstract: 1N5819 smd diode 1N5817 smd 1n5819 smd 1N5817 smd diode 1n5819 equivalent 1N5818 smd BKC Semiconductors DO-213AB GLASS Schottky
Contextual Info: 1N5817 thru 1N5819 DO-41 Glass 1 Amp Use Advantages Schottky Rectifier Low forward voltage drop. Fast switching due to majority carrier conduction which results in high operating efficiencies because of Ipw power loss. Used in low voltage power supplies, high frequency inverters and converters,

1N5819 smd diode

Abstract: BKC Semiconductors DO-213AB GLASS Schottky
Contextual Info: DO-41 Glass 1 Amp Use Advantages 1N5819 HR Schottky Rectifier HR Low forward voltage drop. Consult factory for commercial part. Fast switching due to majority carrier conduction which results in high operating efficiencies because of low power loss. Used in low voltage power supplies, high frequency inverters and converters,