1N5820 MIC Search Results

Contextual Info: 1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE 3.0 Ampere Schottky Barrier Rectifiers

Contextual Info: 1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE Schottky Rectifiers

half bridge LLC inverter

Abstract: diode 1n5822g 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL 1N5822
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5820

Abstract: C-16
Contextual Info: Bulletin PD-20647 rev. A 02/02 1N5820 SCHOTTKY RECTIFIER 3.0 Amp Major Ratings and Characteristics Description/ Features Characteristics 1N5820 Units IF AV Rectangular waveform 3.0 A VRRM 20 V 450 A 0.475 V - 65 to 150 °C IFSM @ tp = 5 µs sine VF @ 3 Apk, TJ = 25°C

1N5820

Abstract: C-16
Contextual Info: Bulletin PD-20647 rev. B 05/02 1N5820 SCHOTTKY RECTIFIER 3.0 Amp Major Ratings and Characteristics Description/ Features Characteristics 1N5820 Units IF AV Rectangular 3.0 A VRRM 20 V IFSM @ tp = 5 µs sine 450 A 0.475 V - 65 to 150 °C waveform VF @ 3 Apk, TJ = 25°C

5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS

Abstract: FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge 1N5822 rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5822 PACKAGE

Abstract: 1N5821 half wave rectifier LLC 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL 1N5822
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5820

Abstract: 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5822 DIODE T28
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5820 1N5821 1N5822

Abstract: 1N5820-1N5822 1N5820 1N5821 1N5822
Contextual Info: 1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE Schottky Rectifiers

Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5820-1N5822

Abstract: 1N5822 data sheet 1N5400 1N5820 1N5821 1N5822 CBVK741B019 F63TNR semiconductor band color code
Contextual Info: 1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE 3.0 Ampere Schottky Barrier Rectifiers

1N5822

Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5821

Abstract: 1N5820 1N5822 D0201AD
Contextual Info: 3 Amp Schottky Rectifier 1N5820, 1N5821, 1N5822 M illim eter Dim. Inches Minimum A B C D .188 1.00 .285 .0 « Maximum Minimum .260 - .375 .056 4.78 25.4 7.24 1.17 Maximum Notes 6.50 Dio. 9.52 1.42 Dia. - PLASTIC D0201AD Microsemi Catalog Number Working

1N5822 data sheet

Abstract: 1N5820 1N5821 1N5822
Contextual Info: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes DO-201AD FEATURES 1.0 25.4 MIN. * The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 * Metal silicon junction, majority carrier conduction

1N5820

Abstract: C-16 avr20
Contextual Info: 1N5820 Vishay High Power Products Schottky Rectifier, 3.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

1N5822

Abstract: 1N582C microsemi 1n5820
Contextual Info: • m m Chatsworth, CA m Microsemi 1N5820 thru 1N5822 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • • 3 Amp Schottky Barrier Rectifier 20 - 40 Volts Low Switching Noise Low Forward Voltage; Drop High Current Capability

1N5820

Abstract: 1N5821 1N5822
Contextual Info: 1N5820 thru 1N5822 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • 3 Amp Schottky Barrier Rectifier 20 - 40 Volts Low Switching Noise Low Forward Voltage Drop High Current Capability High Surge Current Capability

1N5822

Abstract: 1N5822 data sheet 1n5822 datasheet 1N5822 diode 1N5820 1N5821
Contextual Info: 1N5820 THRU 1N5822 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • 3 Amp Schottky Barrier Rectifier 20 - 40 Volts Low Switching Noise Low Forward Voltage Drop High Current Capability High Surge Current Capability

Contextual Info: 1N5820 Vishay High Power Products Schottky Rectifier, 3.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

Contextual Info: 1N5820 Vishay High Power Products Schottky Rectifier, 3.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

1n5822

Abstract: 1N5822 st
Contextual Info: 1N5820 thru 1N5822 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • 3 Amp Schottky Barrier Rectifier 20 - 40 Volts Low Switching Noise Low Forward Voltage Drop High Current Capability High Surge Current Capability

1N5820

Abstract: 1N5821 1N5822
Contextual Info: 1N5820 THRU 1N5822 Schottky Barrier Rectifier YENYO Voltage Range 20 to 40 V Current 3.0 Ampere Features ¬ Low forward voltage drop ¬ High current capability ¬ High reliability ¬ High surge current capability Mechanical Data ¬ ¬ ¬ ¬ ¬ ¬ DO-201AD

C1104

Abstract: 1N5820 C-16 1n58201
Contextual Info: Bulletin PD-20647 rev. C 11/04 1N5820 SCHOTTKY RECTIFIER 3.0 Amp Major Ratings and Characteristics Description/ Features Characteristics Values Units IF AV Rectangular 3.0 A VRRM 20 V IFSM @ tp = 5 µs sine 450 A 0.475 V - 65 to 150 °C waveform VF @ 3 Apk, TJ = 25°C

Contextual Info: Bulletin PD-20647 rev. C 11/04 1N5820 SCHOTTKY RECTIFIER 3.0 Amp Major Ratings and Characteristics Description/ Features Characteristics Values Units IF AV Rectangular 3.0 A VRRM 20 V IFSM @ tp = 5 µs sine 450 A 0.475 V - 65 to 150 °C waveform VF @ 3 Apk, TJ = 25°C