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    1N5822 DIODE Search Results

    1N5822 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    1N5822 DIODE Price and Stock

    Taiwan Semiconductor 1N5822

    Diode Schottky - 40V - 3A - 2-Pin - DO-201AD.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5822 70
    • 1 $1.5
    • 10 $1.5
    • 100 $0.65
    • 1000 $0.2203
    • 10000 $0.2203
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    Frederick Comp 1N5822

    Diode Schottky 40V 3A 2-Pin DO-201AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5822 15
    • 1 $1.54
    • 10 $1.54
    • 100 $0.602
    • 1000 $0.2268
    • 10000 $0.2268
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    Vishay Semiconductors 1N5822

    Diode Schottky 40V 3A 2-Pin DO-201AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5822 3
    • 1 $1.54
    • 10 $1.54
    • 100 $0.602
    • 1000 $0.2268
    • 10000 $0.2268
    		Buy Now

    Diotec Semiconductor AG 1N5822

    Schottky Diode - DO-201 - 40V - 3A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5822
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.1039
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    1N5822 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N5822

    Abstract: 1N5820 1N5821
    Text: 1N5820 . 1N5822 1N5820 . 1N5822 Schottky Barrier Rectifier Diodes Schottky-Barrier-Gleichrichterdioden Version 2010-06-01 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung ~ DO-201 Weight approx. Gewicht ca. 1g


    Original     		PDF 1N5820 1N5822 DO-201 UL94V-0 1N5821 1N5822 1N5820 1N5821

    DIODE 1N5822

    Abstract: 1N5820 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 r14525 1N5820/D DIODE 1N5822 1N5820RL 1N5821 1N5821RL 1N5822RL

    1N5821

    Abstract: No abstract text available
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 Surfa5820 1N5821 1N5821

    half bridge LLC inverter

    Abstract: diode 1n5822g 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL 1N5822
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D half bridge LLC inverter diode 1n5822g 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL

    1N5822RL

    Abstract: 1N5820 1N5822 1N5820RL 1N5821 1N5821RL
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 r14525 1N5820/D 1N5822RL 1N5820RL 1N5821 1N5821RL

    Untitled

    Abstract: No abstract text available
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 SurfaN5820 1N5821 1N5821

    1N5822

    Abstract: DIODE 1N5822 FULL WAVE RECTIFIER CIRCUITS 1N5820-D 1N5822 data sheet 1N5822 PACKAGE 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS sine wave inverter circuit diagram 1N5820 1N5820RL
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D DIODE 1N5822 FULL WAVE RECTIFIER CIRCUITS 1N5820-D 1N5822 data sheet 1N5822 PACKAGE 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS sine wave inverter circuit diagram 1N5820RL

    5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS

    Abstract: FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge 1N5822 rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier

    1N5822 PACKAGE

    Abstract: 1N5821 half wave rectifier LLC 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL 1N5822
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5822 PACKAGE 1N5821 half wave rectifier LLC 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL

    1N5820

    Abstract: 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5822 DIODE T28
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G DIODE T28

    Untitled

    Abstract: No abstract text available
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D

    1N5820

    Abstract: 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D 1N5820RL 1N5821 1N5821RL 1N5822RL

    DO-201AD

    Abstract: No abstract text available
    Text: Formosa MS Axial Leaded Schottky Barrier Rectifier 1N5820 THRU 1N5822 List List. 1 Package outline. 2


    Original     		PDF 1N5820 1N5822 MIL-STD-750D METHOD-1036 JESD22-A102 METHOD-1051 METHOD-4066-2 1000hrs. DO-201AD

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Schottky Barrier Rectifier 1N5820 THRU 1N5822 List List. 1 Package outline. 2


    Original     		PDF 1N5820 1N5822 22-A102 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs.

    1N5822

    Abstract: T4-LDS-0303 mil-prf-19500/1N5822 MELF
    Text: 1N5820 – 1N5822 and 1N6864 Available on commercial versions 3 Amp Axial Schottky Barrier Rectifiers Qualified per MIL-PRF-19500/620 Qualified Levels*: JAN, JANTX, JANTXV and JANS DESCRIPTION This series of 3 amp Schottky rectifiers in their axial-leaded “B” packaging offer flexible thruhole mounting. The 1N5822 and 1N6864 are military qualified for high-reliability applications.


    Original     		PDF 1N5820 1N5822 1N6864 MIL-PRF-19500/620 1N6864 MIL-PRF-19500/620 T4-LDS-0303 mil-prf-19500/1N5822 MELF

    DIODE 1N5822

    Abstract: 1N5821-T3 1N5820 1N5820-T3 1N5820-TB 1N5821 1N5821-TB 1N5822 RS-296-E
    Text: 1N5820 – 1N5822 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability


    Original     		PDF 1N5820 1N5822 DO-201AD DO-201AD, MIL-STD-202, DIODE 1N5822 1N5821-T3 1N5820 1N5820-T3 1N5820-TB 1N5821 1N5821-TB 1N5822 RS-296-E

    1N5822 data sheet

    Abstract: 1N5820 1N5821 1N5822
    Text: 1N5820 - 1N5822 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 3.0 Ampere DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop


    Original     		PDF 1N5820 1N5822 DO-201AD DO-201AD UL94V-O MIL-STD-202, 1N5821 1N5820 1N5822 data sheet 1N5821 1N5822

    1N582

    Abstract: 1N5822 data sheet 1N5820 1N5821 1N5822
    Text: 1N5820 - 1N5822 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 3.0 Ampere DO-201AD FEATURES : * * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop


    Original     		PDF 1N5820 1N5822 DO-201AD DO-201AD UL94V-O MIL-STD-202, 1N582 1N5821 1N582 1N5822 data sheet 1N5821 1N5822

    Untitled

    Abstract: No abstract text available
    Text: Diodes DIP Type Schottky Barrier Rectifier 1N5820 -1N5822 DO-201AD Features High current capability ,low forward voltage drop Low Power Loss, High Efficiency High surge capability Dimensions in inches and millimeters Absolute Maximum Ratings Ta = 25 Parameter


    Original     		PDF 1N5820 -1N5822 DO-201AD 1N5820 1N5821 1N5822

    1N5820

    Abstract: 1N5821 1N5822
    Text: 1N5820 - 1N5822 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 3.0 Ampere DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop


    Original     		PDF 1N5820 1N5822 DO-201AD DO-201AD UL94V-O MIL-STD-202, 1N5820 1N5821 1N5821 1N5822

    Untitled

    Abstract: No abstract text available
    Text: 1N5820 - 1N5822 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 3.0 Ampere DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop


    Original     		PDF 1N5820 1N5822 DO-201AD DO-201AD UL94V-O MIL-STD-202, 1N5821 1N5820

    Untitled

    Abstract: No abstract text available
    Text: 1N5820 – 1N5822 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  High Current Capability A B  Low Power Loss, High Efficiency  High Surge Current Capability


    Original     		PDF 1N5820 1N5822 DO-201AD DO-201AD, MIL-STD-202,

    1NS820

    Abstract: No abstract text available
    Text: 1N5820 1N5821 1N5822 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1NS820 and 1N5822 are Designer’s Data Sheet Motorola Preferred Devices A xial Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide


    OCR Scan     		PDF 1N5820 1N5821 1N5822 1NS820 1N5822

    MDA2501

    Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
    Text: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090


    OCR Scan     		PDF 1N5817 1N5618 1N5818 1N5819 1N5820 1N5821 MDA2501 pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1