1N5822 PACKAGE Search Results

DO-201AD

Contextual Info: Formosa MS Axial Leaded Schottky Barrier Rectifier 1N5820 THRU 1N5822 List List. 1 Package outline. 2

Contextual Info: Formosa MS Schottky Barrier Rectifier 1N5820 THRU 1N5822 List List. 1 Package outline. 2

1N5820

Abstract: 1N5821 1N5822 diode schottky 1N5822
Contextual Info: Formosa MS Schottky Barrier Rectifier 1N5820 THRU 1N5822 List List. 1 Package outline. 2

Contextual Info: Formosa MS Schottky Barrier Rectifier 1N5820 THRU 1N5822 List List. 1 Package outline. 2

DIODE 1N5822

Abstract: 1N5820 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5821

Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

half bridge LLC inverter

Abstract: diode 1n5822g 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL 1N5822
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5822RL

Abstract: 1N5820 1N5822 1N5820RL 1N5821 1N5821RL
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation

Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5822

Abstract: DIODE 1N5822 FULL WAVE RECTIFIER CIRCUITS 1N5820-D 1N5822 data sheet 1N5822 PACKAGE 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS sine wave inverter circuit diagram 1N5820 1N5820RL
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS

Abstract: FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge 1N5822 rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5822 PACKAGE

Abstract: 1N5821 half wave rectifier LLC 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL 1N5822
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5820

Abstract: 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5822 DIODE T28
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5820

Abstract: 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5822

Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5822

Abstract: T4-LDS-0303 mil-prf-19500/1N5822 MELF
Contextual Info: 1N5820 – 1N5822 and 1N6864 Available on commercial versions 3 Amp Axial Schottky Barrier Rectifiers Qualified per MIL-PRF-19500/620 Qualified Levels*: JAN, JANTX, JANTXV and JANS DESCRIPTION This series of 3 amp Schottky rectifiers in their axial-leaded “B” packaging offer flexible thruhole mounting. The 1N5822 and 1N6864 are military qualified for high-reliability applications.

L75C

Contextual Info: 1N5820THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3 . 0 Amperes _ FEATURES_ ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal silicon junction, majority carrier conduction

1N5820

Abstract: 1N5821 1N5822
Contextual Info: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Ampere FEATURES DO-201AD Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Metal silicon junction,majority carrier conduction

1N5820

Abstract: 1N5821 1N5822
Contextual Info: CE 1N5820 THRU 1N5822 CHENYI ELECTRONICS SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0Ampere FEATURES . Plastic package has Underwriters Laboratory Flammability Classification 94V-0 . Metal sliicon junction ,majority carriet conduction

1N5820

Abstract: 1N5821 1N5822
Contextual Info: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes DO-201AD FEATURES 1.0 25.4 MIN. * Compliance to RoHS product * The plastic package carries Underwriters Laboratory Flammability Classification 94V-0

1N5820

Abstract: 1N5821 1N5822
Contextual Info: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes DO-201AD FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction

1N5820

Contextual Info: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes FEATURES DO-201AD ◆Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆Metal silicon junction,majority carrier conduction

Contextual Info: LESHAN RADIO COMPANY, LTD. 1N5820 thru 1N5822 1.Feature & Dimensions Schottky Barrier Rectifiers * Plastic package has Underwriters Laboratory * * * * Reverse Voltage 20 to 40V Forward Current 3.0A Flammability Classification 94V-0 Low power loss,high efficiency