1N5828 Search Results

Contextual Info: DIGITRON SEMICONDUCTORS 1N5826-1N5828 15 AMP SCHOTTKY RECTIFIER MAXIMUM RATINGS Symbol Characteristics Value TSTG Storage Temperature Range -55 to +175°C TJ Operating Junction Temperature Range -55 to +150°C RθJC Maximum Thermal Resistance 1.6°C/W Junction to case

1N5827

Abstract: 1N5826 1N5827 equivalent
Contextual Info: 1N5826 1N5827 1N5828 M O T O R O LA M D i ' w i S Í ' n i T H D a t a S h e p l SCHOTTKY B A R R IER R E C T IFIE R S H O T C A R R I E R POWER R E C T I F I E R . employing the Schottky Barrier principle m a large area metal-to-siiicon power diode State of the art geometry features epitaxial con-.truction with oxide passiva

Contextual Info: 1N5826 thru 1N5828R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF = 15 A Features • High Surge Capability • Types up to 40V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified

Contextual Info: asi 1N5828 SCHOTTKY BARRIER RECTIFIER DESCRIPTION: The 1 N 5 8 2 8 is Designed for High Frequency Rectifier Applications Requiring Good Efficiency and Surge Characteristics. FEATURES: PACKAGE STYLE D O - 4 • Low V F - 0.4 V Typical at 15 A • High Surge Capacity - 500 A

Contextual Info: 1N5826 thru 1N5828R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF = 15 A Features • High Surge Capability • Types from 20 V to 40 V VRRM DO-4 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.

1N5826

Contextual Info: MCC 1N5826
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU 1N5828 Features • • • • 15 Amp Schottky Barrier Rectifier 20 to 40 Volts Metal of siliconrectifier, majonty carrier conducton

1N5828

Contextual Info: 1N5828 SCHOTTKY BARRIER RECTIFIER DESCRIPTION: The 1N5828 is Designed for High Frequency Rectifier Applications Requiring Good Efficiency and Surge Characteristics. FEATURES: PACKAGE STYLE DO- 4 • Low V F - 0.4 V Typical at 15 A • High Surge Capacity - 500 A

1N5827

Abstract: 1N5826 1N5828 n5826
Contextual Info: 15 Amp Schottky Rectifier - 1N5828 Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes A B C D E F G H J M N P Notes: 1. 1 0 - 3 2 UNF3A threads 2. Full th re a d s within 2 1 /2 threads 3. Standard Polarity: S tud is Cathode Reverse P olarity: Stud is

1N5827

Abstract: 1N5828 1N5826
Contextual Info: 1N5826 thru 1N5828R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF = 15 A Features • High Surge Capability • Types up to 40V VRRM DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol "R" devices have leads reversed

Contextual Info: 1N5826 thru 1N5828R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF = 15 A Features • High Surge Capability • Types up to 40V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified

1N5828

Abstract: 1N5826 1N5827
Contextual Info: 15 Amp Schottky Rectifier 1N5826 - 1N5828 Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes A B C D E F G H J M N P Notes: 1. 1 0 - 3 2 UNF3A threads 2. Full threads within 2 1 /2 threads 3. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is

1N5827

Abstract: 1N5828 1N5826 1N5827 equivalent 1N5828 equivalent
Contextual Info: MOTOROLA Order this document by 1N5826/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet 1N5826 1N5827 1N5828 Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,

IN5827

Abstract: IN5826 1N5826 1N5827 1N5828
Contextual Info: 1N5826 1N5827 1N5828 ‘0 HOT CARRIER POWER RECTIFIER .,. employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage,

1N5628

Abstract: 1N5826
Contextual Info: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5826 and 1N5628 are Motorola Preferred Devices Designer’s Data Sheet Pow er R ectifiers SCHOTTKY BA R R IE R RECTIFIERS . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.

Contextual Info: 1N5826 R THRU 1N5828(R) DACO SEMICONDUCTOR CO., LTD. SCHOTTKY DIODES STUD TYPE 15 A Features 15Amp Rectifier 20-40 Volts High Surge Capability Types up to 40V V RRM DO-5 Maximum Ratings B Operating Temperature: -65 C to +150 N Storage Temperature: -65 C to +175

1N5828

Abstract: 1N5826 1N5827 28v 15amp diodes
Contextual Info: Transys 1N5826 R THRU 1N5828(R) Electronics L I M I T E D SCHOTTKY DIODES STUD TYPE 15 A Features 15Amp Rectifier 20-40 Volts High Surge Capability Types up to 40V V RRM DO-5 Maximum Ratings B Operating Temperature: -65 C to +150 N Storage Temperature: -65 C to +175

1N5826

Contextual Info: 1N5826 thru 1N5828R Naina Semiconductor Ltd. Schottky Power Diode, 15A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

INTEX

Abstract: D00033 1N5817 1N5818 1N5819 M25-400 super mole 1N5830
Contextual Info: INTEX/ SEMITRÔNICS CORP 000032^ 27E D h m semitron hot line o t -07 TOLL FREE NUMBER 800-777-3960 discrete devices SCHOTTKY BARRIER RECTIFIERS OPERATING AND STORACE TEMPERATURE «65»C to +1SO°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current

A1W TRANSISTOR

Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
Contextual Info: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201

SR1604

Abstract: SR1006 S041 E SR1002 SR1605 NSR1030 NST1020 NST1030 NST1045 SR1004
Contextual Info: D I O D E S INCOR POR ATE D - ^ D ~ 1 56146713 □□□□Bfc.b 7 J _ SCHOTTKY BARRIER RECTIFIERS De1s6457T3 □ OOOBfciki 7 J^iPER A T IN G TEM PERATURE RANGE 20 to 4 5 V -65° C to+125° C 5 0 a n d 6 0 V -6 5 ° C to +150°C S T O R A G E T E M P E R A T U R E R A N G E -6 5 ° C to +150°C

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

S041P

Abstract: SD41P SR2020 SR2030 SR2045 5.0 ampere schottky NSD30 1N6095
Contextual Info: DIODES INC 32E D • 28487=53 0Q0Q337 M M D I I SCHOTTKY BARRIER RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE -65°C to +150°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum Forward Peak Surge Current