1N583 Search Results

1n5830

Abstract: 1n5831 1N5829
Contextual Info: MCC 1N5829 thru 1N5831
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • 25 Amp Schottky Barrier Rectifier 20 to 35 Volts Metal of siliconrectifier, majonty carrier conducton

Contextual Info: 1N5839D Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage2.7 @I(Z) (A) (Test Condition)20m Tolerance (%)1 P(D) Max. (W)500m Z(z) Max. (ê) Dyn. Imped.50 Temp Coef pp/10k Maximum Operating Temp (øC)150# Package StyleTO-92

1N5832

Contextual Info: 1N5832 1N5833 1N5834 MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5834 are M oto ro la P referred D evices S w itchm ode Pow er R e c tifier SCHOTTKY B A R R IE R R EC TIFIE R S . . . e m p lo y in g th e S c h o ttk y B a r r ie r p rin c ip le in a la rg e a r e a m e ta l- to - s ilic o n p o w e r d io d e .

21133

Contextual Info: Schottkv Rectifiers Microsemi ' Microsemi Division SDS040PF FST5045 FST5050 SBR5050PF FST5080 FST5090 FST50100 FST6210 FST6215 FST6220 SBR6020 SBR6025 FST6130 SBR6030 FST5535 SD241 SDS1 SD241 SD51 FST6135 1N5834 FST5540 FST6140 SBR6040 1N6392 FST5545 FST6145

1N5829

Contextual Info: 1N5829,1N5830 1N5831 MBR5831H, HI gl MOTOROLA l t ‘w i{ ïin « r s D a t a S h e e t H O T C A R R IE R P O W E R R E C T IF IE R S S C H O T T K Y B A R R IE R R E C T IF IE R S . e m p lo y in g th e S c h o ttk y B a rrie r p r in c ip le in a la rg e area m e ta lto -s ih c o n p o w e r diod e. S ta te -o f- th e -a rt g e o m e try fe a tu re s e p ita x ia l

Vrsm

Abstract: 1N5832
Contextual Info: Switchmode Power Rectifier Schottky Diode [1N5832 ] Technical Data Typical applications : Ideally suited for use as Rectifiers in low voltage , High frequency invertors , Free wheeling diodes and polarity protection diodes. Type No. V RRM V RSM Volts (Volts)

Contextual Info: 1N5832 R THRU 1N5834(R) DACO SEMICONDUCTOR CO., LTD. SCHOTTKY DIODES STUD TYPE 40 A Features 40Amp Rectifier 10-30 Volts High Surge Capability Types up to 40V V RRM DO-5 Maximum Ratings B Operating Temperature: -65 C to +150 N Storage Temperature: -65 C to +175

Contextual Info: 1N5832 thru 1N5834R Silicon Power Schottky Diode VRRM = 10 V - 30 V IF = 40 A Features • High Surge Capability • Types up to 30V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified

Contextual Info: 1N5829 thru 1N5831R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF = 25 A Features • High Surge Capability • Types up to 40V VRRM DO-4 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.

Contextual Info: 1N5832 thru 1N5834R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF AV = 40 A Features • High Surge Capability • Types from 20 V to 40V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode.

1N5830

Abstract: Vrsm
Contextual Info: Switchmode Power Rectifier Schottky Diode [1N5830 ] Technical Data Typical applications : Ideally suited for use as Rectifiers in low voltage , High frequency invertors , Free wheeling diodes and polarity protection diodes. Type No. V RRM V RSM Volts (Volts)

12v dc full wave bridge rectifier

Abstract: 5000 watt full bridge design 1N5S34
Contextual Info: 1N5832 IN 5833 1N5834 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5S34 are Motorola Preferred Devices Switchmode Power Rectifier SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.

3140 rectifier

Abstract: 1N5831 1N5b 1N5830 1N5829
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA 1N5829 1N5830 1N5831 D esigner's D ata S h eet S w it c h m o d e P o w e r R e c tifie r s . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

u1560

Abstract: 1N5832
Contextual Info: 1N5832 1N5833 1N5834 M M O T O R O L A SCHOTTKY B A R R IE R R E CT IFIE R S H O T C A R R I E R POW ER R E C T I F I E R 4 0 AMPERE 20,30.40 VO LTS . . . e m p l o y in g t h e S c h o t t k y B a r r ie r p r in c ip le in a la rg e a r e a m e t a l t o -s ilic o n p o w e r

1N5832

Contextual Info: 1N5832 thru 1N5834R Naina Semiconductor Ltd. Schottky Power Diode, 40A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)

1N5830

Abstract: 770V 1N5829 1N5831
Contextual Info: 25 Amp Schottky Rectifiers 1N5829 - 1N5831 Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes A B C D E F G H J M N P Notes: 1. 1 0 - 3 2 UNF3A threads 2. Full threads within 2 1 /2 threads Standard Polarity; Stud is Cathode 1 .424 -.600 .422

1n5832

Contextual Info: MCC 1N5832
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU 1N5834 Features • • • • 40 Amp Schottky Barrier Rectifier 20 to 40 Volts Metal of siliconrectifier, majonty carrier conducton

Contextual Info: MCC ' M W 4 0 AM PERE S C H O T T K Y / DO-5 20 30 40 1N5832 1N5833 1N5834 40 40 40 Package Outline Pg. A-10 75 75 75 800 800 800 20 20 20 70 70 105 400 400 600 250* 250* 125* 125 125 125 125 125 125 125 125 200 200 200 200 200 200 200 200 0.1 0.1 0.1 0.1

Contextual Info: DIGITRON SEMICONDUCTORS 1N5829-1N5831 25 AMP SCHOTTKY RECTIFIERS MAXIMUM RATINGS Symbol Parameter Value TSTG Storage temperature range -65° to +125°C TJ Operating junction temperature range -65° to +125°C RθJC Maximum thermal resistance RθJS Typical thermal resistance

IN5834

Abstract: IN5833 IN5832 N5834 1N5 diode 1N5832 1N5833
Contextual Info: IN5832 1N5833 IN5834 I HOT CARRIER POWER RECTIFIER I , employing the Schottky Barrier principle in a large area metal-to-silicon power diode, State of the art’geometrv features epitaxial construction with oxide passivation and metal overlap contact. Ideallv suited for use as rectifiers in low-voltage,

1N5835

Abstract: IN5836 5961-A562
Contextual Info: M l L - S - 1 9 5 0 0 / 484 EL A M E N D M E N T -1 28 August 1973 M IL IT A R Y S P E C IF IC A T IO N S E M IC O N D U C T O R D E V IC E , D IO D E , S ILIC O N , P O W E R R E C T IF IE R , T X and N O N - T X 1N5835 and. T h is A m e n d m e n t S p e c if ic a t io n

1N5832

Abstract: 1N5833 1N5834
Contextual Info: Transys 1N5832 R THRU 1N5834(R) Electronics L I M I T E D SCHOTTKY DIODES STUD TYPE 40 A Features 40Amp Rectifier 20-40 Volts High Surge Capability Types up to 40V V RRM DO-5 Maximum Ratings B Operating Temperature: -65 C to +150 N Storage Temperature: -65 C to +175

DO-203AA

Abstract: Naina Semiconductor 1N5831
Contextual Info: 1 1N5831 Naina Semiconductor emiconductor Ltd. Schottky Barrier Rectifier Diode Features • Fast Switching • Low forward voltage drop, VF • Guard ring protection • High surge capacity • High efficiency, low power loss Electrical Ratings TC = 250C, unless otherwise noted

Contextual Info: 1N5829 thru 1N5831R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF = 25 A Features • High Surge Capability • Types up to 40V VRRM DO-4 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified