1N60 SILAN Search Results

1N60 SILAN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Diode Equivalent 1N60 Contextual Info: 3VD186600YL 3VD186600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. 1 3 1-Gate PAD 3-Source PAD ¾ Advanced termination scheme to provide enhanced voltageblocking capability.	Original	3VD186600YL 3VD186600YL O-251-3Ltype 250uA Diode Equivalent 1N60	PDF
Contextual Info: 3VD173600YL 3VD173600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD173600YL is a 600V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced	Original	3VD173600YL 3VD173600YL O-92-3L 5245dies/wafer	PDF
Diode Equivalent 1N60 Abstract: 1N60 MOS 1N60 SILAN diode 1n60 1N60 silan Contextual Info: 3VD186600YL 3VD186600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified	Original	3VD186600YL 3VD186600YL O-251-3Ltype Diode Equivalent 1N60 1N60 MOS 1N60 SILAN diode 1n60 1N60 silan	PDF
Diode Equivalent 1N60 Abstract: diode 1n60 1N60 MOS 1N60 Contextual Info: 3VD169600YL 3VD169600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD169600YL is a 600V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced	Original	3VD169600YL 3VD169600YL O-92-3L Diode Equivalent 1N60 diode 1n60 1N60 MOS 1N60	PDF
3VD186600YL Abstract: 1N60 Contextual Info: 3VD186600YL 3VD186600YL 高压MOSFET芯片描述 Ø 3VD186600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；	Original	3VD186600YL 3VD186600YL 3VD186600YLN 600VMOS O-251-3L 1N60	PDF
3VD173600YL Abstract: 1N60 MOS 1N60 Contextual Info: 3VD173600YL 3VD173600YL 高压MOSFET芯片描述 ¾ 3VD173600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；	Original	3VD173600YL 3VD173600YL 3VD173600YLN 600VMOS O-92-3L 5245dies/wafer 250AVDS 30VVDS 1N60 MOS 1N60	PDF
3VD169600YL Abstract: 1N60 MOS 1N60 Contextual Info: 3VD169600YL 3VD169600YL 高压MOSFET芯片描述 Ø 3VD169600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；	Original	3VD169600YL 3VD169600YL 3VD169600YLN 600VMOS O-92-3L 600VVGS 1N60 MOS 1N60	PDF