1N6137AUS Search Results

diode 1n6

Abstract: 1N6102 1N6102US 1N6103AUS 1N6118AUS 1N6137AUS 1N6138US 1N6173A 1N6173AUS Microsemi micronote series 701
Contextual Info: 1N6102US thru 1N6137AUS and 1N6138US thru 1N6173AUS Voidless-Hermetically-Sealed Surface Mount Bidirectional Transient Suppressors SCOTTSDALE DIVISION APPEARANCE This surface mount series of industry recognized voidless-hermeticallysealed Bidirectional Transient Voltage Suppressor TVS designs is

1N6103 JANTX

Abstract: 1N6172AUS 1N6103 1N6103AUS 1N6103US 1N6137AUS 1N6138US 1N6139US 1N6173A 1N6173AUS
Contextual Info: 1N6103US thru 1N6137AUS and 1N6139US thru 1N6173AUS Voidless-Hermetically-Sealed Surface Mount Bidirectional Transient Suppressors SCOTTSDALE DIVISION APPEARANCE This surface mount series of industry recognized voidless-hermeticallysealed Bidirectional Transient Voltage Suppressor TVS designs is

Contextual Info: 1N6103AUS – 1N6137AUS Available on commercial versions Voidless Hermetically Sealed Surface Mount Bidirectional Transient Voltage Suppressors Qualified to MIL-PRF-19500/516 Qualified Levels: JAN, JANTX, JANTXV and JANS* DESCRIPTION This surface mount series of industry recognized voidless, hermetically sealed, bidirectional

1N6121A JANTX

Abstract: 1N6122A JANTX 1N6109 JANS 1N6120 1n6110 1N6103AUS 1N6133 1n6107 jans 1N6102US 1N6137
Contextual Info: 1N6102US thru 1N6137US 1N6103AUS thru 1N6137AUS 500W Bipolar Transient Voltage Suppressor Surface Mount US POWER DISCRETES Description Features Quick reference data Low dynamic impedance Hermetically sealed non-cavity construction 500 watt peak pulse power

1n6127aus

Abstract: 1N6160AUS 1N6149AUS 1N6172AUS 1N6102 1N6102US 1N6103AUS 1N6118AUS 1N6138AUS 1N6138US
Contextual Info: 1N6102US thru 1N6137AUS and 1N6138US thru 1N6173AUS Voidless-Hermetically-Sealed Surface Mount Bidirectional Transient Suppressors SCOTTSDALE DIVISION APPEARANCE This surface mount series of industry recognized voidless-hermeticallysealed Bidirectional Transient Voltage Suppressor TVS designs is

1N6133

Abstract: 1N6102 1N6102US 1N6103 1N6103AUS 1N6137 1N6137AUS 1N6137US 1N6122A JANTX 1N6112 JANTX
Contextual Info: 1N6102US thru 1N6137US 1N6103AUS thru 1N6137AUS 500W Bipolar Transient Voltage Suppressor Surface Mount US POWER DISCRETES Description Features Quick reference data ‹ ‹ ‹ ‹ VBR MIN = 6.12 -180V VRWM = 5.2 - 152V VC (max) = 11 - 273V I(BR) 1N6102 - 1N6137 = 5mA - 175mA

1N6137AUS

Contextual Info: Transient Voltage Suppressor SM PART NUMBER: 1N6137AUS PACKAGE STYLE:MELFTVS CONFIGURATION:Transient Voltage Suppressor SM -All ratings are @ Tc = 25 °C unless otherwise specified. MAXIMUM RATINGS / ELECTRICAL CHARACTERISTICS SYMBOL VALUE UNITS MIN BREAKDOWN VOLTAGE

5d 3kv

Abstract: equivalent components of diode 1N4249 Semtech alpac alpac scba2 SCPA2 single phase half controlled full wave bridge rec semtech kv-pac SI96-01 2PFT2 SCBAR4F
Contextual Info: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage

1N6122A JANTX

Abstract: 93/bbc 598 479 DIODE 1N6116A 1N6160A 1N6173US J610X 1N6138 1N6111 1N6162A JANTX 1N6102A
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 September 2009. INCH-POUND MIL-PRF-19500/516E 5 June 2009 SUPERSEDING MIL-PRF-19500/516D 23 July 1999 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE

melfas

Abstract: 1N6650-1 1N5819UR-1 1N6650 1N5819-1 1N6138AUS
Contextual Info: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision HERMETIC SILICON SCHOTTKY BARRIER DIODES SC H O T T K Y BARRIER DIO DES TYPE NUMBERS PEAK INVERSE VOLTAGE MAX AVG. DC OUTPUT CURRENT i Volts MAXIMUM REVERSE CURRENT @PIV Tj 25°C mA Amps 100CC

Contextual Info: Square ended SMD 1N6102US,&A thru 1N6137US.&A 500 watt Voidless TZS Hard GlassTungsten MELF "B" Package Applications Symmetrical, bidirectional Transient voltage protection against static (ESD), power and lightening. The hard glass voidless construction is especially suited for the hostile

2730A

Abstract: DSAIH0002550
Contextual Info: Square ended SMD ^ r . «1ft 500 watt Voidless TZS) ' ' 1 N6102US.&A Hard GlassTungsten MELF "B" Package 1 N6137US.&A lU . Applications . ’.|J Sym m etrical, bidirectional Transient voltage protection against static (ESD )3 power and lightening. The hard glass voidless construction is especially suited for the hostile

TVS diode MELF

Abstract: 1N6133 1n6121 1N6102 1N6102A 1N6102AUS 1N6102US 1N6137 1N6137A 1N6137AUS
Contextual Info: tSENSITRON SEMICONDUCTOR AXIAL LEAD / MELF, TRANSIENT VOLTAGE SUPPRESSOR BI- DIRECTIONAL DIODES Peak Pulse Power 500 W Unidirectional Chip AXIAL 1N6102 - 1N6137 1N6102A - 1N6137A 1N6461 – 1N6468 1C6102 - 1C6137 1C6102A - 1C6137A 1C6461 – 1C6468 MELF 1N6102US - 1N6137US

SCDA6

Abstract: semtech rectifier bridge SCH25000 rectifier 400V 5A Full-Wave Bridge Rectifier SCBAR4F sdhd5k SC3BK4F SCDA4F 1N5415
Contextual Info: 2008 Axial Rectifiers PART NUMBERS DESCRIPTION 1N5415 through 1N5420 Fast recovery axial rectifier, 50V - 600V, Io=4.5A 1N5550 through 1N5554 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 Standard recovery axial rectifier, 200V - 1000V, Io=5.0A Standard recovery axial rectifier, 200V - 1000V, Io=2.0A

PSKE

Abstract: JANTXV1N6137 EM 189 PSKE160A ha+13627
Contextual Info: Transient Voltage Suppressors Mcmsemi I Part Number Microsemi Division K i s f B f 'P f p . Scottsdale Scottsdale SA48CA Scottsdale SA5.0 Scottsdale SMAJ150 SMAJ150A Scottsdale Santa Ana 1N6137 Santa Ana 1N6137US Santa Ana JAN1N6137 JAN1N6137US Santa Ana

High-Rel Discrete Semiconductors

Abstract: fast recovery diode 1000v 10A fast recovery diode 400v 5A fast recovery diode 600v 5A IN4954 150a 400v diode bridge diode 50v 5A 3-Phase Full-Wave Bridge Rectifier Zener Diode Glass 50v DIODE RECTIFIER BRIDGE SINGLE 55a 600v
Contextual Info: 2010 Catalog High-Rel Discrete Semiconductors Assembly Products Semtech’s Strategy in Discrete Products is to supply devices, either in axial, surface-mount or custom assembly configurations, that are rugged in design and in packages that are both hermetic and varied

1N6102A

Abstract: 1N6103A 1N6104A 1N6105A 1N6106A 1N6107A 1N6108A 1N6109A 1N6137A 1N6121A
Contextual Info: 1N6102A thru 1N6137A SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 287, REV - TRANSIENT VOLTAGE SUPPRESSER DIODES AXIAL LEAD and MELF TRANSIENT VOLTAGE SUPPRESSORS, 500W SERIES SERIES TYPE BREAKDOWN VOLTAGE I(BR) TEST CURRENT I(BR) WORKING PEAK REVERSE

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 October 1999. INCH-POUND MIL-PRF-19500/516D 23 July 1999 SUPERSEDING MIL-S-19500/516C 20 January 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE