1N63 Search Results

Contextual Info: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive

Contextual Info: 1N6373 thru 1N6389 I n ter n a tio n a l S e m ic o n d u c to r , I n c . TRANSIENT VOLTAGE SUPPRESSORS FOR MICROPROCESSOR PROTECTION 5.0 to 45 VOLTS 1500 WATT PEAK POWER 5.0 WATT STEADY STATE 1N5908 MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25 °C am bient unless otherwise specified

MFT-15

Abstract: 1N6370 js 10 watt zener diode 1N6356 1N6357 1N6358 1N6359 1N6360 1N6361 mft5
Contextual Info: T ra n s ie n t V oltag e S u p p re s s io n TV S D io d e s M P T /1 N 6 3 5 6 Series 1N6372 OYOOM Control overpower FEATURES fim s ib fe P rotection ri tmin. L h LJ 5.33 max. ;5 ;0 25.4 min. n JU 0.6 0.8 - 15.58 A ll dimensions in mm When no problems exist, Oyctoiri TVS

1N6277

Contextual Info: DIGITRON SEMICONDUCTORS 1N6267-1N6303A UNIDIRECTIONAL AND BIDRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS FEATURES • • • • • • Available in both Unidirectional and Bidirectional add C or CA suffix for bidirectional Voltages from 6.8 to 180 V Breakdown (VBR)

1N6392 JANTX

Abstract: 75HQ045 1N6392 JANTX1N6392 1N6392 75HQ045 DO-203AB JAN1N6392 JANTXV1N6392
Contextual Info: International HH Rectifier 75S1 1N6392 1N6392 1N6392 [ M IL-S-19500/554] SCHOTTKY RECTIFIER 60 Amp Major Ratings and Characteristics Characteristics 'f a v Rectangular Description/Features 1N6392 Units 60* A 45* V waveform V RWM 'fs m 60Hz

1N6391

Contextual Info: Schottky Rectifier 1N6391 Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 0 - 3 2 UNF3A threads 2. Full threads within 2 1 /2 threads Standard Polarity: Stud is Cathode A B C D E F G H J M N P R 1 .424 -.600 .422 .075 .300 .163

1N6392

Abstract: 40HFL40S02 DO-203AB IRFP460
Contextual Info: Bulletin PD-2.080 rev. C 11/02 1N6392 60 Amp SCHOTTKY RECTIFIER TO-203AB DO-5 Description/ Features Major Ratings and Characteristics The 1N6392 Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175° C junction

Contextual Info: 1N6267 thru 1N6303A 1.5KE6.8 thru 1.5KE440CA Transient Voltage Suppressor Breakdown Voltage 6.8 to 440 Volts Peak Pulse Power 1500 Watts Features   CASE: DO-201AD DO-27      Breakdown Voltages (VBR) from 6.8 to 440V 1500W peak pulse power capability with a 10/1000 s

Contextual Info: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s P T E / 1 N 6 3 7 3 ~~ 1N63^ O Y O Q M Control over power 01.O16±O.O5O im s ib ie Prolection FEATURES When no problems exist, Oydom TVS • Qass passivated junction Diodes are totally invisible to the circuits

1N6377

Abstract: 1N6373 1N6381 1N6382 1N6385 1N6389 ICTE15C MPTE-45 ICTE-12 equivalent MPTE-15
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com ICTE5.0 to ICTE15C MPTE-5 to MPTE-45 1N6373 to 1N6381 and 1N6382 to 1N6389

1N6268CAL

Abstract: 1N6276CA 1N6267CAL 1N6267CL 1N6268CL 1N6269CL 1N6303CAL 1N6284CL
Contextual Info: 1N6267CL - 1N6303CAL BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR VBR : 6.8 - 200 Volts PPK : 1500 Watts DO-201AD FEATURES : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to V BR min.

1N6304

Abstract: 1N6304R 1N6305 1N6306 1N6304-1N6306
Contextual Info: 1N6304— 1N6306 RECTIFIERS High Efficiency, 70A F EATU RES DESCRIPTION • • • • • • • The 1N6304 Series is specifically designed for operation in power switching circuits operating at frequencies of at least 20KHz. The very low forward voltage and

1N6267

Abstract: 1N6303 5KE440CA JESD22-B102D J-STD-002B
Contextual Info: 1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in Unidirectional and Bidirectional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle :

1N6316 JANTX

Abstract: 1N6309 1N6310 1N6311 1N6312 1N6313 1N6314 1N6315 1N6316 1N6317
Contextual Info: 1N6309 THRU 1N6320 • AVAILABLE IN JAN, JANTX, JANTXV, AND JANS PER MIL-PRF-19500/533 • 500 mW ZENER DIODES • NON CAVITY CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS 0.056/0.075 1.42/1.91 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

30FQ045

Abstract: 1N6391 JANTX JANTXV1N6391
Contextual Info: PD-2.385 International IS Rectifier 30FQ045 1N6391 1N6391 1N6391 1N6391 [ MIL-S-19500/553 ] SCHOTTKY RECTIFIER 25 Amp Major Ratings and Characteristics Description/Features Characteristics 1N6391 Units V AV R ctengular waveform 25* A V 45 V

Transient voltage suppressors

Abstract: DIODE 1n6294a diode 1n6285A 1N6275 1,5ke15 diode 1n6278A
Contextual Info: 1.5KE6.8 thru 1.5KE440CA and 1N6267 thru 1N6303A Transient Voltage Suppressors Peak Pulse Power 1500W Breakdown Voltage 6.8 to 440V Features ‹ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ‹ Glass passivated junction ‹ 1500W peak pulse power capabililty on 10/1000us waveform,

IN5811

Abstract: 1N5816 1N6306
Contextual Info: PRELIMINARY DEVICES, INC Phone: 714 670-SSDI (7734) • ^ SRM1HFSMS thru SRM2HFSMS Fax: (714) 522-7424 Designer’s Data Sheet FEATURES: • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Replaces DO-4 and DO-5 (1N5816, 1N6306) High Current Version of IN5811

1N6389

Abstract: 1N6373 1N6381 1N6382 1N6383 1N6384 ICTE-10C ICTE-36C MPTE-45C
Contextual Info: 1N6382 - 1N6389 Series ICTE-10C - ICTE-36C, MPTE-8C - MPTE-45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have

Contextual Info: 1N6305+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current70 V(RRM)(V) Rep.Pk.Rev. Voltage100 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage975m

Contextual Info: 1N6325+JANTXV Diodes General-Purpose Reference/Regulator Diode Military/High-RelY V Z Nom.(V) Reference Voltage11 @I(Z) (A) (Test Condition)20m Tolerance (%)5 P(D) Max. (W)500m Z(z) Max. (ê) Dyn. Imped.7.0 Temp Coef pp/10k8.2 Maximum Operating Temp (øC)200þ

Contextual Info: 1N6305R+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current70 V(RRM)(V) Rep.Pk.Rev. Voltage100 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage975m @I(FM) (A) (Test Condition)70

Contextual Info: 1N6327+JANTXV Diodes General-Purpose Reference/Regulator Diode Military/High-RelY V Z Nom.(V) Reference Voltage13 @I(Z) (A) (Test Condition)9.5m Tolerance (%)5 P(D) Max. (W)500m Z(z) Max. (ê) Dyn. Imped.8.0 Temp Coef pp/10k7.9 Maximum Operating Temp (øC)200þ

Contextual Info: 1N6323+JANTXV Diodes General-Purpose Reference/Regulator Diode Military/High-RelY V Z Nom.(V) Reference Voltage9.1 @I(Z) (A) (Test Condition)20m Tolerance (%)5 P(D) Max. (W)500m Z(z) Max. (ê) Dyn. Imped.6.0 Temp Coef pp/10k7.6 Maximum Operating Temp (øC)200þ

Contextual Info: 1N6353+JANTXV Diodes General-Purpose Reference/Regulator Diode Military/High-RelY V Z Nom.(V) Reference Voltage160 @I(Z) (A) (Test Condition)800u Tolerance (%) P(D) Max. (W)500m Z(z) Max. (ê) Dyn. Imped.1.2k Temp Coef pp/10k11 Maximum Operating Temp (øC)200þ