1N638 Search Results

Contextual Info: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive

Contextual Info: 1N6373 thru 1N6389 I n ter n a tio n a l S e m ic o n d u c to r , I n c . TRANSIENT VOLTAGE SUPPRESSORS FOR MICROPROCESSOR PROTECTION 5.0 to 45 VOLTS 1500 WATT PEAK POWER 5.0 WATT STEADY STATE 1N5908 MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25 °C am bient unless otherwise specified

1N6377

Abstract: 1N6373 1N6381 1N6382 1N6385 1N6389 ICTE15C MPTE-45 ICTE-12 equivalent MPTE-15
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com ICTE5.0 to ICTE15C MPTE-5 to MPTE-45 1N6373 to 1N6381 and 1N6382 to 1N6389

Contextual Info: ICTE5.0 thru ICTE18C 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors Major Ratings and Characteristics VWM 5.0 V to 18 V PPPM 1500 W PD 6.5 W IFSM 200 A Tj max. 175 °C Case Style 1.5KE Features Mechanical Data • Glass passivated chip junction

1N6389

Abstract: 1N6373 1N6381 1N6382 1N6383 1N6384 ICTE-10C ICTE-36C MPTE-45C
Contextual Info: 1N6382 - 1N6389 Series ICTE-10C - ICTE-36C, MPTE-8C - MPTE-45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have

icte-5rlg

Abstract: 12RL 1N6373 1N6374 1N6375 1N6376 1N6377 1N6380 1N6381 ICTE-36
Contextual Info: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36 1500 Watt Peak Power Mosorbt Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high-energy transients. They have

88356

Abstract: 1N6373 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002
Contextual Info: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty

Contextual Info: 1N6373 thru 1N6389 or MPTE-5 thru MPTE-45C 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This Transient Voltage Suppressor TVS series for 1N6373 thru 1N6389 are JEDEC registered selections for both unidirectional and bidirectional

1N6373

Abstract: 1N6374 1N6375 1N6376 1N6381 1N6382 1N6389 ICTE-36 MPTE-45
Contextual Info: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have

Contextual Info: 1N6386 Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC -65 Maximum Operating Temp (øC)175õ V(BR) Nom.(V)Rev.Break.Voltage21 @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage18 I(PPM) Max.(A)Pk.Pulse Current50

Contextual Info: 1N6387 Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC -65 Maximum Operating Temp (øC)175õ V(BR) Nom.(V)Rev.Break.Voltage26 @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage22 I(PPM) Max.(A)Pk.Pulse Current40

TVS 36C

Abstract: diode zener 22c MPTE-45 ICTE 1N6373 1N6381 1N6382 1N6383 1N6384 1N6389
Contextual Info: 1N6382 - 1N6389 Series ICTE-10C - ICTE-36C, MPTE-8C - MPTE-45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have

1N6373

Abstract: 1N6381 1N6382 1N6383 1N6384 1N6389 ICTE-10C ICTE-36C MPTE-45C
Contextual Info: 1N6382 - 1N6389 Series ICTE-10C - ICTE-36C, MPTE-8C - MPTE-45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have

UJT 2N2646 specification

Abstract: GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS UJT 2N2646 DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram
Contextual Info: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have

Contextual Info: DIGITRON SEMICONDUCTORS 1N6373 – 1N6389 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR • Unidirectional and bidirectional TVS series for thru-hole mounting • Suppresses transients up to 1500 watts @ 10/1000 s • tclamping 0 volts to V(BR min):

ICTE-5

Contextual Info: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have

Contextual Info: 1N6384 Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC -65 Maximum Operating Temp (øC)175õ V(BR) Nom.(V)Rev.Break.Voltage14 @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage12 I(PPM) Max.(A)Pk.Pulse Current70

Contextual Info: 1N6388 Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC -65 Maximum Operating Temp (øC)175õ V(BR) Nom.(V)Rev.Break.Voltage42 @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage36 I(PPM) Max.(A)Pk.Pulse Current23

Contextual Info: 1N6382 Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC -65 Maximum Operating Temp (øC)175õ V(BR) Nom.(V)Rev.Break.Voltage9.4 @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage8 I(PPM) Max.(A)Pk.Pulse Current100

1N6373

Abstract: 1N6376 1N6374 1N6375 1N6377 1N6381 1N6382 1N6389
Contextual Info: 1N6373 − 1N6381 Series ICTE−5 − ICTE−36, MPTE−5 − MPTE−45 1500 Watt Peak Power Mosorbt Zener Transient Voltage Suppressors Unidirectional* http://onsemi.com Cathode Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have

in6376

Abstract: IN6377 in6373 IN6378 IN6375 IN6379 IN-6375 lN6373 suppressors 1N6373
Contextual Info: 1N6373 THRU 1N6381 +» Central Semiconductor Corp. Central semiconductor Corp. 1.5KW TRANSIENT SUPPRESSOR EPOXY MOLDED AXIAL LEAD CASE 145 A dam s Avenue Hauppauge, New York 11 788 DESCRIPTION The CENTRAL SEMICONDUCTOR 1N6373 Series types are Epoxy Molded Axial Lead Transient

1.5KE 20A 1N6278A

Abstract: KE-25 1.5KE62A Motorola N5908 I.5KE 1N6373 1N6374 1N6382 KE250 KE91A
Contextual Info: Order this data sheet by 1N5908/D MOTOROLA SEMICONDUCTOR \ TECHNICAL DATA 1 N5908 1N6373/lCTE-5 MPTE-5 thru 1N6389/lCTE:~.,C Zener Transient Voltage Suppressors Unidirectional and Bidirectional Mosorb devices are designed to protect voltage sensitive components from high voltage, high

N6385

Contextual Info: G eneral S e m i c o n d u c t o r _ ^ ^ - ._ ICTE5.0 thru ICTE15C 1 N6373 thru 1N 6377 & 1N6382 thru 1 N6385 TRANsZoRB Transient Voltage S uppressors Stand Off Voltage 5.0 to 15V Peak Pulse Power 1500W • Plastic package has Underwriters Laboratory

Contextual Info: Transient Voltage Suppressors Part Number TVS JANTXV1N5632A LC8.0 LC8.0A LCE8.0 LCE8.0A SMCG8.0 SMCG8.0A SMCJ8.0 SMCJ8.0A 1N6039 1N6357 1N6365 1N6374 1N6382 ICT-8 ICTE-8 MPT-8 MPT-8C MPTE-8 MPTE-8C 1.5KCD10 1.5KE10 1N5633 1N6271 CD6271 1N6143 1N6143US JAN1N6143