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    1N64 Search Results

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    1N64 Price and Stock

    Vishay Semiconductors 1N6480-E3-96

    DIODE GEN PURP 200V 1A DO213AB
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    DigiKey 1N6480-E3-96 Digi-Reel 42,849 1
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    1N6480-E3-96 Cut Tape 42,849 1
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    1N6480-E3-96 Reel 40,500 1,500
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    Vishay Semiconductors 1N6478-E3-96

    DIODE GEN PURP 50V 1A DO213AB
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    1N6478-E3-96 Reel 19,500 1,500
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    Vishay Semiconductors 1N6479-E3-96

    DIODE GEN PURP 100V 1A DO213AB
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    DigiKey 1N6479-E3-96 Cut Tape 12,719 1
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    1N6479-E3-96 Digi-Reel 12,719 1
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    1N6479-E3-96 Reel 12,000 1,500
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    Vishay Semiconductors 1N6482-E3-96

    DIODE GEN PURP 600V 1A DO213AB
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    DigiKey 1N6482-E3-96 Cut Tape 6,990 1
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    1N6482-E3-96 Digi-Reel 6,990 1
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    1N6482-E3-96 Reel 4,500 1,500
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    Microchip Technology Inc 1N6487US-TR

    VOLTAGE REGULATOR
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    DigiKey 1N6487US-TR Cut Tape 91 1
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    1N6487US-TR Digi-Reel 91 1
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    1N64 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N64 Crimson Semiconductor GERMANIUM DIODE DO-7 Scan PDF
    1N64 General Instrument Semiconductors and Electronic Components 1971 Scan PDF
    1N64 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N64 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N64 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N64 Unknown GE Transistor Specifications Scan PDF
    1N64 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N64 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N64 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    1N64 Thomson-CSF Condensed Data Book 1977 Scan PDF
    1N6402 General Semiconductor TransZorb Transient Voltage Suppressors Scan PDF
    1N6402 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N6402A General Semiconductor TransZorb Transient Voltage Suppressors Scan PDF
    1N6402A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N6403 General Semiconductor TransZorb Transient Voltage Suppressors Scan PDF
    1N6403 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N6403A General Semiconductor TransZorb Transient Voltage Suppressors Scan PDF
    1N6403A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N6404 General Semiconductor TransZorb Transient Voltage Suppressors Scan PDF
    1N6404 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ...

    1N64 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1N6478 thru 1N6484 Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Ideal for automated placement SUPERECTIFIER • Low forward voltage drop • Low leakage current


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    PDF 1N6478 1N6484 MIL-S-19500 J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-213AB 2011/65/EU 2002/95/EC.

    1N649-1

    Abstract: 1N649 JANTX
    Text: FEATURES 1N649-1 • • • • • 1N649-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:


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    PDF 1N649-1 1N649-1 MIL-PRF-19500/240 500mW 400mA, 150mA, MILPRF-19500/240 DO-35 1N649 JANTX

    1N648-1

    Abstract: No abstract text available
    Text: FEATURES 1N648-1 • • • • • 1N648-1 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 8.3mS: Total Power Dissipation: Operating Current:


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    PDF 1N648-1 500mW 400mA, 150mA, 1N648-1

    1N646-1

    Abstract: marking blue
    Text: FEATURES 1N646-1 • • • • • 1N646-1 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 8.3mS: Total Power Dissipation: Operating Current:


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    PDF 1N646-1 500mW 400mA, 150mA, 1N646-1 marking blue

    1N6503

    Abstract: 1N6499 JANTX 62034 "yellow led" 1.6mm 1n6505 JANTX1N6497 JANTX1N6502 1N6493 1N6497 1N6500
    Text: 62034 1N649X Mii JAN QUALIFIED FAULT INDICATORS 1N650X OPTOELECTRONIC PRODUCTS DIVISION Features: Applications: • • • • • • • • • • • MIL-PRF-19500 Hermetically sealed Pin compatible with Dialight 547 and 555 series Available with Internal Current Regulation 5 to 30


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    PDF 1N649X 1N650X MIL-PRF-19500 1N649X, 1N650X ANTX1N6503 JANTX1N6501 JANTX1N6504 JANTX1N6502 JANTX1N6505 1N6503 1N6499 JANTX 62034 "yellow led" 1.6mm 1n6505 JANTX1N6497 JANTX1N6502 1N6493 1N6497 1N6500

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N645-1N649 SILICON RECTFIER DIODES Available Non-RoHS standard or RoHS compliant (add PBF suffix) Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number MAXIMUM RATINGS


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    PDF 1N645-1N649 MIL-PRF-19500, 1N645 1N646 1N647 1N648 1N649 DO-35A

    1N6468US

    Abstract: MIL-S-19500 1N6467US tvs-diode 1N6461US 1N6462US 1N6463US 1N6464US 1N6465US 1N6466US
    Text: 1N6461US THRU 1N6468US QPL 500 Watt Surface Mount TVS POWER DISCRETES Description Features The 1N64xx series of transient voltage suppressors are designed to protect military and commercial electronic equipment from overvoltages caused by lightning, ESD, EFT, inductive load switching, and EMP. These devices


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    PDF 1N6461US 1N6468US 1N64xx 1N6466US, 1N6467US, 6461U 6468U 1N6468US MIL-S-19500 1N6467US tvs-diode 1N6462US 1N6463US 1N6464US 1N6465US 1N6466US

    1N6478

    Abstract: 1N6484 DO-213AB JESD22-B102D J-STD-002B
    Text: 1N6478 thru 1N6484 Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop


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    PDF 1N6478 1N6484 MIL-S-19500 J-STD-020C, 2002/95/EC 2002/96/EC DO-213AB 08-Apr-05 1N6484 DO-213AB JESD22-B102D J-STD-002B

    Untitled

    Abstract: No abstract text available
    Text: 1N6478 thru 1N6484 Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A IR 10 µA VF 1.1 V Tj max. 175 °C d* e t n Pate *Glass-plastic encapsulation


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    PDF 1N6478 1N6484 DO-213AB MIL-S-19500 J-STD-020C DO-213AB, 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: 1N6462+JANTX Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage6.5 @I(R) (A) (Test Condition)20m V(RWM) (V) Work.Pk.Rev.Voltage6 I(PPM) Max.(A)Pk.Pulse Current46


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    PDF 1N6462 Current46 Voltage11 StyleDO-204AE

    Untitled

    Abstract: No abstract text available
    Text: 1N6475+JANTXV Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage44 @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage40 I(PPM) Max.(A)Pk.Pulse Current24


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    PDF 1N6475 Voltage44 Voltage40 Current24 Voltage63 StyleDO-204AE

    Untitled

    Abstract: No abstract text available
    Text: 1N6473+JANTX Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage27 @I(R) (A) (Test Condition)5m V(RWM) (V) Work.Pk.Rev.Voltage24 I(PPM) Max.(A)Pk.Pulse Current36.5


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    PDF 1N6473 Voltage27 Voltage24 Current36 Voltage41 StyleDO-204AE

    Untitled

    Abstract: No abstract text available
    Text: 1N6473+JANTXV Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage27 @I(R) (A) (Test Condition)5m V(RWM) (V) Work.Pk.Rev.Voltage24 I(PPM) Max.(A)Pk.Pulse Current36.5


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    PDF 1N6473 Voltage27 Voltage24 Current36 Voltage41 StyleDO-204AE

    Untitled

    Abstract: No abstract text available
    Text: 1N6472+JANTXV Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage16 @I(R) (A) (Test Condition)10m V(RWM) (V) Work.Pk.Rev.Voltage15 I(PPM) Max.(A)Pk.Pulse Current57


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    PDF 1N6472 Voltage16 Voltage15 Current57 Voltage26 StyleDO-204AE

    Untitled

    Abstract: No abstract text available
    Text: 1N6478 I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . thru 1N6484 SURFACE MOUNT, GLASS PASSIVATED 1.0 Amp SILICON RECTIFIER DIODE FEATURES: Plastic material has Underwriters Laboratory S G1 Flammability Classification 94 V -0 Low Leakage Glass Passivated Junction


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    PDF 1N6478 1N6484 IL-S-19500 IL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: Silicon Rectifier Diodes E 1N645-1 thru 1N649-1 Use Advantages DO-35 Glass Package Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers.


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    PDF 1N645-1 1N649-1 DO-35 0Q0057L> 1N645-1 1N645-649

    JTX 1N649-1

    Abstract: DSAIH00025213 1n646
    Text: Silicon Rectifier Diodes Use Advantages n 1N645-1 thru 1N649-1 DO-35 Glass Package Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers.


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    PDF 1N645-1 1N649-1 DO-35 1N647-1 1N648 1N649-1 150mAdc, 1N645/47/49-1 -213AA JTX 1N649-1 DSAIH00025213 1n646

    BKC Semiconductors

    Abstract: No abstract text available
    Text: 500 Watt Void less TZS 1N6462 thru 1N6468 Applications Transient Zener Suppressors Overvoltage transient voltage protection against static (ESD), power and lightening. The hard glass voidless construction is especially suited for the hostile environments in aerospace and military equipment applications where


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    PDF 1N6462 1N6468 MIL-S-19500 10viS 1N6463 1N6464 1N6465 1N6466 1N6467 BKC Semiconductors

    BKC Semiconductors

    Abstract: No abstract text available
    Text: 1N6470 thru 1N6476 1500 Watt Voidless TZS Applications Transient Zener Suppressors Overvoltage transient voltage protection against static (ESD), power and lightening. The hard glass voidless construction is especially suited for the hostile environments in aerospace and military equipment applications where


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    PDF 1N6470 1N6476 BKC Semiconductors

    1N6470

    Abstract: BKC Semiconductors DSAIH0002560
    Text: 1N6470 1500 Watt Voidless TZS Transient Zener Suppressors thru 1N6476 Applications Overvoltage transient voltage protection against static (ESD), power and lightening. The hard glass voidless construction is especially suited for the hostile environments in aerospace and military equipment applications where


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    PDF 1N6470 1N6476 MIL-S-19 1N6462 1N6468 1N6470 BKC Semiconductors DSAIH0002560

    1n6462

    Abstract: DSAIH0002560
    Text: 500 Watt Voidless TZS 1N6462 thru 1N6468 Applications Transient Zener Suppressors Overvoltage transient voltageprotection against static (ESD), power and lightening. The hard glass voidless construction is especially suited for the performance and a small footprint are important.


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    PDF 1N6462 1N6468 MIL-S-19500 DSAIH0002560

    diode 4483

    Abstract: RZ2h marking E 1n diode marking 1n diode zener 4474 1N4471
    Text: 1N4460 thru 1N4496 and 1N6485 thru 1N6491 Microsemi Corp. The diode experts SCOTTSDALE, /1Z ☆JANS* 1.5 WATT GLASS ZENER DIODES FEATURES • • • • • • • • Microminiature package. High performance characteristics. Stable operation at temperatures to 200°C .


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    PDF 1N4460 1N4496 1N6485 1N6491 1N6491 diode 4483 RZ2h marking E 1n diode marking 1n diode zener 4474 1N4471

    1N6459

    Abstract: 1N6460
    Text: Schottky PowerMod N6459 1N6460 Dim. Inches * & i u Baseplate Common Cathode 1/4-20UNC with Captive Lockwasher a i A B C D E F G Min. Max. -1.350 0.700 -3.140 -0.280 2.450 1.400 0.800 0.625 3.160 3.650 0.300 M illim eters Min. _ 34.29 17.78


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    PDF 1/4-20UNC T0-244AB 1N6459 1N6460 Amperes/40

    1N4532

    Abstract: 1n4631 IN643 1n662 jantx 1N3064 1N4151 1N4154 1N4534 1N643 1N662
    Text: 1N643; JAN 1N643 1N662; JAN 1N662 1N663; JAN 1N663 COMPUTER DIODE Switching FEATU RES DESCRIPTION • M etallurgical Bond T h is device is particularly suited to a pp licatio ns where m ediu m speed sw itching is required. M oisture free stability is ensured through herm etic


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    PDF 1N643; 1N662; 1N663; 1N643 1N662 1N663 MIL-S-19500/256 1N662 1N4532 1n4631 IN643 1n662 jantx 1N3064 1N4151 1N4154 1N4534