1N65 Search Results

6052S

Abstract: 1N661
Contextual Info: TYPES 1N659, 1N660. 1N661 SILICON SW ITCHING DIODES B U LLETIN NO. DL-S 739782, M AR C H 19 6 7 - R E V IS E D M AR C H 1973 M EDIUM-SPEED SWITCHING DIO DES • Rugged Double-Plug Construction m echanical d a ta D o u b le -p lu g c o n s tru c tio n a ffo rd s inte gral p o s itiv e c o n ta c t b y m eans o f a th e rm a l c o m p re s sio n b o n d . M o istu re -fre e

1N6510

Abstract: MX1N6510
Contextual Info: 1N6510 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN ceramic flat pack for use as

1N6503

Abstract: 1N6499 JANTX 62034 "yellow led" 1.6mm 1n6505 JANTX1N6497 JANTX1N6502 1N6493 1N6497 1N6500
Contextual Info: 62034 1N649X Mii JAN QUALIFIED FAULT INDICATORS 1N650X OPTOELECTRONIC PRODUCTS DIVISION Features: Applications: • • • • • • • • • • • MIL-PRF-19500 Hermetically sealed Pin compatible with Dialight 547 and 555 series Available with Internal Current Regulation 5 to 30

1N6508

Contextual Info: 1N6508 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering

1N6509

Contextual Info: 1N6509 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering

Contextual Info: DIGITRON SEMICONDUCTORS 1N6513, 1N6515 1N6517, 1N6519 0.5A-2.0A RECTIFIERS 2,000V - 10,000V working reverse voltage 70 ns Recovery Time Operating Temperature = -65 to +175°C Storage Temperature = -65 to +200°C ELECTRICAL CHARACTERISTICS Part Number Working

1N6510

Abstract: 1N6101 1N6510 JANTX
Contextual Info: 1N6101 and 1N6510 JANTX, JANTXV A Microsemi Company 580 PLEASANT ST. WATERTOWN, MA 02172 PHONE: 617 924-9280 FAX: (617) 924-1235 MIL -PRF-19500/474 Features • • • • • BV ≥ 75 V @ 5 µA IR ≤ 100 nA @ 40 V VF ≤ 1 V @ 100 mA C… 4.0 pF (MAX)

1N6511

Abstract: 1N6100
Contextual Info: A Microsemi Company 580 PLEASANT ST. WATERTOWN, MA 02172 PHONE: 617 924-9280 FAX: (617) 924-1235 1N6100 and 1N6511 JANTX, JANTXV MIL -PRF-19500/474 Features • • • • • BV ≥ 75 V @ 5 µA IR ≤ 100 nA @ 40 V VF ≤ 1 V @ 100 mA C… 4.0 pF (MAX)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N65A Power MOSFET 0.5A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N65A is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche

1N6510

Abstract: MSC1009
Contextual Info: 1N6510 JANTX, JANTXV A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: • • • • QUALIFIED PARTS LISTING: MIL-PRF-19500/474 Bv > 75V at 5uA

Contextual Info: HIGH VOLTAGE RECTIFIERS 70nS RECOVERY AXIAL LEADED HERMETICALLY SEALED in. mm 1N6532 1N6533 1N6534 1N6535 VRWM= 4000 -10000V l F = 25m A -50m A T rr = 70nS JANTX JANTXV 1.30(33.02) ' 1.00(25.4) A ,095±.035 (2.41 ±.89) •020±.003 (.50±.08) 1N6532 1N6533

Contextual Info: HIGH VOLTAGE RECTIFIERS 70nS RECOVERY AXIAL LEADED HERMETICALLY SEALED in. mm 1N6528 1N6529 1N6530 1N6531 V RWM RWM = 1500 - 3000V l F = 100mA -250m A T RR = 70nS JANTX JANTXV 1.30(33.02) 1.00(25.4) c A ,095±.030 Í (2.41 ±.89) •020±.003 (.50±.08) 1N6528

1N6517

Abstract: 1N6513LL 1N6515LL 1N6517LL
Contextual Info: 1N6513LL 1N6515LL 1N6517LL 2,000 V - 5,000 V Rectifiers 1.5 A - 3.5 A Forward Current 70 ns Recovery Time FORMED LEAD ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number 1N6513LL 1N6515LL 1N6517LL Working Reverse Voltage Average Rectified Current Reverse

1N659

Contextual Info: FAIRCHILD SEMICON DUC TOR fl4 D E | 3 4 bclti7M □□2747T 0 3469674 FAIRCHILD SEMICONDUCTOR 84D 2 7 4 7 9 D« 1N659/660/661 FDLL659/660/661 FAIRCHILD A Schlum berger Company General Purpose Diodes _ T - b \ ‘ 0 ° \ PACKAGES

1N6506

Contextual Info: 1N6506 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY 10 2 3 FEATURES: • • • • 4 HERMETIC CERAMIC PACKAGE Bv > 60V at 10uA Ir < 100nA at 40V

1N658

Contextual Info: □ 3E B K C INTERNA TI ONA L D I 1 1 7 cicì a 3 UQQ027A fl | ~ T~- 0 3 - GENERAL PURPOSE DIODES 1N658 ABSOLUTE MAXIMUM RATINGS • VF • Bv 1.0 V @ 100 mA 120 V MIN @ 100 jiA Temperatures Storage Temperature Range Maximum Junction Operating Temperature

1N6520

Abstract: 100C 1N6520U 1N6521U 1N6522U 1N6523U CN650
Contextual Info: bBE » TSmfl54 D0DD3ES TTT « V M ! HIGH VOLTAGE RECTIFIERS 70nS RECOVERY 1N6520U 1N6521U SURFACE MOUNT HERMETICALLY SEALED 1N6522U 1N6523U V RWM = 1500-3000V = 0.25A - 0.5A = 70nS T RR V0LTA6E MULTIPLIERS INC in. mm A .125±.005 (3.2±.06) o '“ F 1N6520U

1N6517

Abstract: 1N6519 1N6516 100C 1N6518
Contextual Info: b3E D • T S l M ñ S M 0 0 0 0 3 3 7 bOl H V M I HIGH VOLTAGE RECTIFIERS 70nS RECOVERY V RWM RWM= 4000-10000V l F = 0.5A - 1.0A T rr = 70nS AXIAL LEADED HERMETICALLY SEALED JANTX JANTXV VOLTAGE MULTIPLIERS in. mm A 1N6518 1N6519 1N6516 1N6517 INC 1.30(33.02)

100C

Abstract: 1N6524U 1N6525U
Contextual Info: b3E D • TSl Mfl SH 0ÜGD3E7 7b2 « V M I HIGH VOLTAGE RECTIFIERS 70nS RECOVERY 1N6524U 1N6525U V buu m = 4000-5000V RWM I F = 150mA SURFACE MOUNT HERMETICALLY SEALED T rr VOLTAGE MULTIPLIERS INC in. mm = 70nS _.300±.010 (7.0±.25) o .125±.005 (3.2±.06)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-92 SOT-223  DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

Contextual Info: _5EW E c h ~ A Microsemi Company 1N6506 LFÌB 5 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: • • • • HERMETIC CERAMIC PACKAGE Bv > 60V at 10uA

Contextual Info: 1N6513LL 1N6515LL 1N6517LL 2,000 V - 5,000 V Rectifiers 1.5 A - 3.5 A Forward Current 70 ns Recovery Time FORMED LEAD Original Released: 08-01-99 Revised Date: 05-17-12 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number 1N6513LL 1N6515LL 1N6517LL Working

Contextual Info: HIGH VOLTAGE RECTIFIERS 70nS RECOVERY 1N6520U 1N6521U 1N6522U 1N6523U VRWM = 1500-3000V = 0.25A •0.5A SURFACE MOUNT HERMETICALLY SEALED = 70nS 1 RR in. mm A ,125±.005(3.2±.13) Markina 3 contrasting color dots evenly spaced around the cathode end. a I

1N6513

Abstract: 1N6515 1N6517 1N6519
Contextual Info: Spice Model 1N6513 Electrical Characteristics and Maximum Ratings Part Working Number Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Forward Voltage Io (Ir) (Vf) (Vrwm) 55°C(1) 100°C(2) 25°C 100°C 1N6513 25°C 1 Cycle Repetitive Reverse