1N68 Search Results

SMD y14

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com 45 VOLTS, 30 AMP SCHOTTKY RECTIFIER CERAMIC SURFACE MOUNT Qualified per MIL-PRF-19500/682 DEVICES LEVELS 1N6845U3

Contextual Info: SENSITRON SEMICONDUCTOR 1N6824-1 1N6824UR-1 TECHNICAL DATA DATASHEET: 320, REV. D ULTRA LOW REVERSE LEAKAGE SCHOTTKY RECTIFIER Very Low Forward Voltage Drop 1A, 100 V Schottky Applications: œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode

1N6815

Abstract: 1N6815R MSASC25H45K MSASC25H45KR MSC1032
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6815 (MSASC25H45K) Features • • • • • • Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability

Contextual Info: PD-94085D 30CLJQ100 1N6843CCU3 1N6843CCU3 1N6843CCU3 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 30 Amp, 100V Ref: MIL-PRF-19500/681 Major Ratings and Characteristics Characteristics IF AV Description/Features 1N6843CCU3 Units 30 A VRRM (Per Leg)

JANS1N6843CCU3

Abstract: 1N6843CCU3 MIL-PRF-19500 high frequency
Contextual Info: PD -94085B 30CLJQ100 1N6843CCU3 1N6843CCU3 1N6843CCU3 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 30 Amp, 100V Ref: MIL-PRF-19500/681 Major Ratings and Characteristics Characteristics IF AV Description/Features 1N6843CCU3 Units 30 A VRRM (Per Leg)

JC SMD DIODE

Abstract: 1N6843 Ta smd
Contextual Info: PPC INC. 7516 Central Industrial Drive Riviera Beach, FL 33404 PH: 561-842-0305 Fax: 561-845-7813 1N6843 100 VOLTS, 10 AMP DUAL SCHOTTKY COMMON CATHODE CENTERTAP RECTIFIER DESIGNER’S DATA SHEET FEATURES: Ø Low Profile Ceramic SMD Ø High Surge Rating Ø Low Reverse Leakage Current

MSASC150

Abstract: MSASC150W45LR 1N6822 1N6822R IR100 MSASC150W45L VF10 VF11 VF13 IR125
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6822 (MSASC150W45L) Features • • • • • • Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability

1N6819

Abstract: 1N6819R MSASC75W45F MSASC75W45FR VF10 MSC1030
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6819 (MSASC75W45F) PRELIMINARY Features • • • • • • Tungsten schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability

1N5822US JANTX

Abstract: 1n6864us 1n6822
Contextual Info: 1N5820US – 1N5822US and 1N6864US Available on commercial versions 3 Amp SQ-MELF Schottky Barrier Rectifiers Qualified per MIL-PRF-19500/620 Qualified Levels*: JAN, JANTX, JANTXV and JANS DESCRIPTION This series of 3 amp Schottky rectifiers are compact in their square MELF packaging for high

Contextual Info: High Voltage Diodes - Formed Lead 0.75A - 2.00A • 30ns - 50ns • Hermetic Original Released: 05-03-07 Revised Date: 08-29-12 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number 1N6837LL 1N6838LL 1N6839LL Working Reverse Voltage Average Rectified

Contextual Info: 1N6842U3 60 Volts, 10 Amp Dual Schottky Common Cathode Center Tap Rectifier Compliant Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/680 DESCRIPTION This low-profile 1N6842U3 Schottky rectifier device is military qualified up to a JANTXV level

ST CHN 510

Abstract: chn 714 chn 725 CHN 725 diode CHN 520
Contextual Info: • Microsemi m m Santa Ana, CA m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology 1N6815 (MSASC25H45K) Features 1N6815R Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com 45 VOLTS, 30 AMP SCHOTTKY RECTIFIER CERAMIC SURFACE MOUNT Qualified per MIL-PRF-19500/682 DEVICES LEVELS 1N6845U3

Contextual Info: PD -94085C 30CLJQ100 1N6843CCU3 1N6843CCU3 1N6843CCU3 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 30 Amp, 100V Ref: MIL-PRF-19500/681 Major Ratings and Characteristics Characteristics IF AV Description/Features 1N6843CCU3 Units 30 A VRRM (Per Leg)

1n6844

Abstract: 1N6844U3
Contextual Info: 1N6844U3 Available on commercial versions SILICON SCHOTTKY POWER RECTIFIER 40 A, 100 V Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/679 DESCRIPTION This low-profile 1N6844U3 Schottky rectifier device is military qualified up to a JANTXV level

1N6761-1

Abstract: 1N6824UR-1 DO-213AB melf switching diodes
Contextual Info: 1N6761-1/N6761UR-1 1N6824-1/1N6824UR-1 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4244, Rev- SCHOTTKY FAST SWITCHING DIODES Sensitron’s Power Semiconductor Products have been used in space, military and high-rel applications for more than 30 years. Our 100V Schottky fast switching diodes, 1N6761-1/UR-1 & 1N6824-1/UR-1, are available in both

1N6841U3

Abstract: SMD DIODE 739 V/1N6841U3
Contextual Info: 1N6840U3 and 1N6841U3 Compliant 35 and 45 VOLT, 10 AMP DUAL SCHOTTKY COMMON CATHODE CENTER TAP RECTIFIER Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/678 DESCRIPTION These low-profile 1N6840U3 and 1N6841U3 dual schottky rectifier devices are military

JANTX, JX, JAN

Abstract: 1N6810UEG2 1N6807 Marking jx 1N6804UEG2
Contextual Info: JAN and JANTX 1N6804UEG2 thru 1N6810UEG2 Vishay Semiconductors Patented* formerly Glass Passivated Rectifiers I I ED MIL TA Reverse Voltage 50 to 1000V Forward Current 1.0A FI DO-214BA UEG2 Q RY UA L 1.7 1.0 Mounting Pad Layout 4.8 3.95 0.066 MIN. (1.68 MIN.)

MIL-PRF-19500-444

Abstract: JANTX, JX, JAN, Schottky 1n5711 equivalent 1N5711-1 DSB5712 DSB2810 1N5711 1N5712 1N5712-1 1N6857-1
Contextual Info: • 1N5711-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 DSB2810 DSB5712 JANTX, JANTXV AND JANS

MSASC25W100KV

Abstract: MSASC25W100K MSASC25W100KS 1N6817 1N6817R MSASC25W100KR PS11
Contextual Info: 1N6817 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 (MSASC25W100K) 1N6817R Features • • • • • • • • • Tungsten schottky barrier Oxide passivated structure Guard ring protection for increased reverse energy capability

1N6837

Abstract: 1N6836 1N6838 1N6839
Contextual Info: 1N6836 1N6837 1N6838 1N6839 2,000 V - 5,000 V Rectifiers 0.5 A - 1.5 A Forward Current 30 ns - 50 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED 4 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Working Number Reverse Voltage Average Rectified Current

MSC1036A

Abstract: msasc150w45l
Contextual Info: Micmsemi m m m Santa Ana, CA Progress Powered b y Technology m 1N6822 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 (MSASC150W45L) 1N6822R Features Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents

Contextual Info: Micmsemi m m m Santa Ana, CA Progress Powered by Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6820 (MSASC75W1 OOF) Features ^ Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy c

Contextual Info: Micmsemi m m m Santa Ana, CA Progress Powered b y Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6819 (MSASC75W45F) Features Oxide passivated structure for very low leakage currents;!? Guard ring protection for increased reverse energy c