1N780 MIXER DIODE Search Results

1N780 MIXER DIODE Result Highlights (5)

Part	Manufacturer	Description
CUZ30V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 30 V, USC
CUZ24V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 24 V, USC
CUZ36V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 36 V, USC
CUZ20V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 20 V, USC
CEZ6V8	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.8 V, ESC

1N780 MIXER DIODE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IN23C Abstract: IN23E in23we DO-37 IN416D 1N26 DO-23 1N25 diode 1N26A diode IN23WGMR Contextual Info: 0258354 ADVANCED ADVANCED S EMI CONDUC TOR SEMICONDUCTOR ! 82D 0 0 0 6 3 fl2 D Dff\|oa5ü3S4 o n - o~r 0□0 □Ob3 4 SILICONPOINTCOMCTMIXER OIOÛES ASI Point Contact Mixer Diodes are designed for applications from UHF through 26 GHz. They feature high burnout resistance, low	OCR Scan	DO-22, DO-23 DO-37 26GHz. supp26A DO-37 1N26B 1N26C IN23C IN23E in23we IN416D 1N26 1N25 diode 1N26A diode IN23WGMR	PDF

Catalog Datasheet

Type

Document Tags

PDF

IN23C

Abstract: IN23E in23we DO-37 IN416D 1N26 DO-23 1N25 diode 1N26A diode IN23WGMR
Contextual Info: 0258354 ADVANCED ADVANCED S EMI CONDUC TOR SEMICONDUCTOR ! 82D 0 0 0 6 3 fl2 D Dff|oa5ü3S4 o n - o~r 0□0 □Ob3 4 SILICONPOINTCOMCTMIXER OIOÛES ASI Point Contact Mixer Diodes are designed for applications from UHF through 26 GHz. They feature high burnout resistance, low

OCR Scan

DO-22, DO-23 DO-37 26GHz. supp26A DO-37 1N26B 1N26C IN23C IN23E in23we IN416D 1N26 1N25 diode 1N26A diode IN23WGMR

PDF