1N8030-GA SPICE Search Results

1N8030-GA SPICE

Contextual Info: 1N8030-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8030-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155

Contextual Info: 1N8030-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge

Contextual Info: 1N8030-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge

Contextual Info: 1N8030-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge