1N914B DIODE Search Results

1N914B

Contextual Info: 1N914B Signal Diode. Max Breakdown Voltage BV = 75V IR = 5.0uA - BV = 100V(IR. Page 1 of 1 Enter Your Part # Home Part Number: 1N914B Online Store 1N914B Diodes Signal Diode. Max Breakdown Voltage BV = 75V(IR = Transistors 5.0uA) - BV = 100V(IR = 100uA).

IN914B

Abstract: IN914B diode 1N4148 1N914b diode 1N4148 ROHM 1n4148 trr JEDEC 1N4148 1N4150 1N4448 1N914B
Contextual Info: 1N4148 / 1N4150 / 1N4448 / 1N914B Diodes Switching diode 1N4148 / 1N4150 / 1N4448 / 1N914B ∗This product is available only outside of Japan. !External dimensions Units : mm !Applications High-speed switching !Features 1) Glass sealed envelope. (GSD) 2) High speed.

1N914B

Contextual Info: RECTRON SEMICONDUCTOR 1N914B TECHNICAL SPECIFICATION 1N914B SIGNAL DIODE Absolute Maximum Ratings Ta=25°C Items Symbol Ratings Unit Reverse Voltage VR 75 V Reverse Recovery trr 4 ns Time Power Dissipation P 500 mW 3.33mW/°C (25°C) Forward Current IF 300

Contextual Info: WILLAS 1N914B 1N914B SIGNAL DIODE FEATURES S Dimensions DO-35 .01 * Extremely Low VF * Majority carrier conduction 1.02(26.0) MIN. Items Package Case Lead/Finish Chip Materials DO-35 Hermetically sealed glass Double stud/Solder Plating Glass Passivated .043 (1.1)

diode 1N914B

Abstract: 1N914B
Contextual Info: Formosa MS Switching Diode 1N914B List List. 1 Package outline. 2 Features. 2

1N914

Abstract: 1N914A 1N914B MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914; 1N914A; 1N914B High-speed diodes Product specification Supersedes data of 1999 May 26 2003 Jun 06 Philips Semiconductors Product specification High-speed diodes 1N914; 1N914A; 1N914B FEATURES DESCRIPTION • Hermetically sealed leaded glass

1N914B

Contextual Info: RECTRON SEMICONDUCTOR 1N914B TECHNICAL SPECIFICATION 1N914B SIGNAL DIODE Absolute Maximum Ratings Ta=25°C Items Symbol Ratings Unit Reverse Voltage VR 75 V Reverse Recovery trr 4 ns Time Power Dissipation P 500 mW 3.33mW/°C (25°C) Forward Current IF 300

Contextual Info: Formosa MS Switching Diode 1N914B List List. 1 Package outline. 2 Features. 2

1N916B

Abstract: t 4148 diode
Contextual Info: Symbol TA=25 C unless otherwise noted Parameter VR Breakdown Voltage VF Forward Voltage IR Reverse Leakage CT Total Capacitance 1N916A/B/4448 1N914A/B/4148 trr Test Conditions 1N914B/4448 1N916B 1N914/916/4148 1N914A/916A 1N916B 1N914B/4448 Reverse Recovery Time

Contextual Info: 1N914, 1N914A, 1N914B Silicon Rectifier Diode Ultra Fast Switch Absolute Maximum Ratings: TA = +25C, Note 1 unless otherwise specified Maximum Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

diode din 4148

Abstract: vishay 1N4148 1N4148.1N4448 1N4148 1N4448 1N914 1N914B
Contextual Info: 1N4148.1N4448 Vishay Telefunken Silicon Epitaxial Planar Diodes Features D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications 94 9367 Extreme fast switches Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage

1N914

Abstract: 1N914B
Contextual Info: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Diodes > Switching Diodes > Part Number 1N914B product family SWITCHING DIODES package type DO-35 VRM PRV 100V Ifsm 500mA

1N4148 telefunken

Contextual Info: 1N4148.1N4448 Vishay Telefunken Fast Switching Diodes Features D Silicon Epitaxial Planar Diodes D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications 94 9367 Extreme fast switches Order Instruction Type Type Differentiation 1N4148

1N4148.1N4448

Abstract: J 1N4448 equivalent
Contextual Info: Temic 1N4148.1N4448 Semiconductors Silicon Epitaxial Planar Diodes Features • Electrically equivalent diodes 1N4148 - 1N914 1N4448 - 1N914B Applications Extreme fast switches Absolute Maximum Ratings Tj = 25 °C tp=ljAs o Junction temperature Storage temperature range

Contextual Info: 1N4148.1N4448 Vishay Telefunken Fast Switching Diodes Features D Silicon Epitaxial Planar Diodes D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications 94 9367 Extreme fast switches Order Instruction Type Type Differentiation 1N4148

1N4148

Abstract: diode din 4148 1N4148.1N4448 1N4448 1N914 1N914B 1N4148 diode 1N4148TR
Contextual Info: 1N4148.1N4448 Vishay Semiconductors Fast Switching Diodes Features D Silicon Epitaxial Planar Diodes D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications 94 9367 Extreme fast switches Order Instruction Type Type Differentiation

1N4148.1N4448

Abstract: 1N4148.TR 1N4148TA vishay 1N4148.1n4448 fast recovery diode 54
Contextual Info: 1N4148.1N4448 VISHAY Vishay Semiconductors Fast Switching Diodes Features • Silicon Epitaxial Planar Diodes • Electrically equivalent diodes: 1N4148 - 1N914 1N4448 - 1N914B Applications Extreme fast switches 94 9367 Mechanical Data Case: DO-35 Glass Case

1N4148.1N4448

Abstract: 1N4148 telefunken Diode Equivalent 1n4148 L45C
Contextual Info: Tem ic 1N4148.1N4448 Semiconductors Silicon Epitaxial Planar Diodes Features • Electrically equivalent diodes 1N4148- 1N914 1N4448 - 1N914B Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25 °C Parameter Repetitive peak reverse voltage

1N4148.1N4448

Abstract: din 4148 1N4148 1N4448 1N914 1N914B
Contextual Info: 1N4148.1N4448 Silicon Epitaxial Planar Diodes Features D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage

1N4148.1N4448

Abstract: 1N4148.TR 1N4148TA
Contextual Info: 1N4148.1N4448 VISHAY Vishay Semiconductors Fast Switching Diodes Features • Silicon Epitaxial Planar Diodes • Electrically equivalent diodes: 1N4148 - 1N914 1N4448 - 1N914B Applications Extreme fast switches 94 9367 Mechanical Data Case: DO-35 Glass Case

1N914

Abstract: 1n914 equivalent 1N914A 1N914B
Contextual Info: 1N914, 1N914A, 1N914B FAST SWITCHING DIODES Features • Fast Switching Speed • High Reliability • High Conductance • For General Purpose Switching Applications Mechanical Data • Terminals: Solderable per MIL-STD-202, • Method 208 • Marking: Type Number

PNP Transistor 2N2222 equivalent

Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
Contextual Info: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510

1N414 diode

Abstract: 1N414 1N4148.1N4448 J 1N4448 equivalent
Contextual Info: 1N4148.1N4448 VISHAY _ ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Electrically equivalent diodes: 1N414 8 - 1 N914 1 N 44 48- 1N914B Applications Extreme fast switches Absolute Maximum Ratings T¡ = 25°C Parameter

1N4148

Abstract: Diode Equivalent 1n4148 1N4148 package SO free 1N4148 1N4148.TR 1N4148-TAP 1N4148-TR 1N4448 1N4448-TAP 1N914
Contextual Info: 1N4148 / 1N4448 Vishay Semiconductors Small Signal Fast Switching Diodes Features • Silicon Epitaxial Planar Diodes • Electrically equivalent diodes: 1N4148 e2 1N914 1N4448 - 1N914B • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC