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    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M in P n M I - MT4LC16270 256K X 16 DRAM DRAM 256K x 16 DRAM 3.3V EDO PAGE MODE FEATURES • Single +3.3V ±0.3V power supply* • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Low power, 0.3mW standby; 165mW active, typical


    OCR Scan     		PDF MT4LC16270 165mW 512-cycle CYCLE24

    MT4C16256DJ-7

    Abstract: No abstract text available
    Text: lU IIÖ Q ö lX I I techno lo g y. iN t MT4CÎ6256/7* 256K X 16 DRAM DRAM 256Kx 16DRAM FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply*


    OCR Scan     		PDF 256Kx 16DRAM 512-cycle MT4C16257 MT4C16256/7 CYCLE24 MT4CI82S4/7 1QT94 QD1111D MT4C16256DJ-7

    Untitled

    Abstract: No abstract text available
    Text: R /lin S n M I ii^ n w r « MT9D136; W1T18D236 t MEGr 2 MEG x 36 DRAM MODULE 1 MEG, 2 MEG X 36 DRAM MODULE FAST PAGE MODE FEATURES • Common RAS control per side pinout in a 72-pin, single-in-line memory module • High-performance CMOS silicon-gate process.


    OCR Scan     		PDF MT9D136; W1T18D236 72-pin, 052mW 024-cycle 72-Pin MT9D136, MT18D236 36DRAM T90I36.