1S96 Search Results

1r5gu

Abstract: IR5G 1NZ61 1R5BZ41 1R5BZ61 1R5DL41 1R5DL41A 1R5DU41 1R5DZ41 1R5DZ61
Contextual Info: - 24 li * m 1NU41 1NZ61 1QZS1 1R5BL41 1R5B241 1R5BZS1 1R5CL41 1R5DL41 1R5DL41A 1R5DU41 1R5DZ41 1R5DZ61 1R5GH45 1R5GU41 1R5GZ41 1R5GZ61 1R5JH45 1R5JU41 1R5JZ41 1R5JZ61 1R5LZ41 1R5NH45 1R5NU41 1R5NZ41 1R5TH61 1S90 1S90R 1S91 1S91R 1S92 1S92R 1S93 1S93R 1S96

diodos

Abstract: R024M R082F 1S963 1SS53 RD27E 5w r010j r010j RD27F RD100E
Contextual Info: TT* KJ Dioaes i — • Zonor D iod os DHO C o nstruction P lan ar Typo • S w itch in g D iod os V r (V) 30 50 75 30 50 75 Typo No. 1S963 1S954 1S955 1SS53 1SS54 1SS55 lo (mA) 100 200 200 100 100 100 P -0 .4 W • Tw in Diodas Typo No. 152835 152836 152837

IR5NU41

Abstract: 1NU 7 IR5D lS99 1i3h 1R5BZ41 1NZ61 1R5BZ61 1R5DL41 1S91
Contextual Info: - 24 li * m 1NU41 1NZ61 1QZS1 1R5BL41 1R5B241 1R5BZS1 1R5CL41 1R5DL41 1R5DL41A 1R5DU41 1R5DZ41 1R5DZ61 1R5GH45 1R5GU41 1R5GZ41 1R5GZ61 1R5JH45 1R5JU41 1R5JZ41 1R5JZ61 1R5LZ41 1R5NH45 1R5NU41 1R5NZ41 1R5TH61 1S90 1S90R 1S91 1S91R 1S92 1S92R 1S93 1S93R 1S96

LD 757 ps

Contextual Info: * LOW POW ER HEX TTL-to-ECL TRANSLATO R SYNERGY SY100S324 S E M IC O N D U C T O R DESCRIPTION FEATURES Max. propagation delay of 1.4ns The SY100S324 is a hex translator designed to convert T T L logic levels to 100K ECL levels. The inputs are TTL com patible with diffe re n tia l o utputs that can e ith e r be

IC LA 78141 characteristics

Abstract: NRED 61 A302 ud
Contextual Info: TLC5510 8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER SLAS095A-SEPTEM BER 1994-R EVISED NOVEMBER 1994 8-Blt Resolution Linearity Error ±0.75 LSB Max 25°C ±1 LSB Max (-20 °C to 75°C) Differential Lineality Error ±0.5 LSB (25°C) ±0.75 LSB M ax(-20°C to 75°C)

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

Contextual Info: O K I Semiconductor M TC 8225716-xxOB1 Static RAM GENERAL DESCRIPTION TheMTC8225716-150Bl and MTC8225716-200B1 are 256Kbytes static RAM cards in conformity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.

Contextual Info: Clockworks SY10EL32/L SY100EL32/L 5V /3 . 3V - 2 D I V I DE R SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • 3.3V and 5V power supply options T h e S Y 1 0 /1 0 0 E L 3 2 /L a re in te g ra te d +2 d iv id e rs . T h e d iffe re n tia l c lo c k in p u ts a n d th e V b b a llo w a d iffe re n tia l,

58LC128

Abstract: D6564 28K32
Contextual Info: ADVANCED MT58LC128K32/36B3 128K X 32/36 SYNCBURST SRAM I^ IIC Z R O N 128K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE Fast access tim es: 8.5, 9 , 10, 11 and 12ns Fast OH# access tim es: 5 and 6n s Sin g le +3 .3 V + 1 0 % /-5 % p o w er sup ply

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

D6505

Abstract: KS0073
Contextual Info: PRELIMINARY 34COM/120SEG DRIVER & CONTROLLER FOR DOT MATRIX LCD KS0078 INTRODUCTION KS0078 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology. It can display 1, 2, or 4 lines with 5 x 8 or 6 x 8 dots format. FUNCTIONS

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

Contextual Info: This document is not intended for viewing onscreen. It is best viewed when printed and read from paper. Depending on your printer, you may need to select “Shrink to Fit” in the print dialog to ensure that the document prints correctly. ASAHI KASGI lA K

IR5NU41

Abstract: 1NZ61 IR5BZ41 T 1S97 1i3h 1R5BZ41 1S101 IR5B IR5D IR5G
Contextual Info: - 24- li f i [5] # * m 1NU41 1NZ61 1QZS1 1R5BL41 1R5B241 1R5BZS1 1R5CL41 1R5DL41 1R5DL41A 1R5DU41 1R5DZ41 1R5DZ61 1R5GH45 1R5GU41 1R5GZ41 1R5GZ61 1R5JH45 1R5JU41 1R5JZ41 1R5JZ61 1R5LZ41 1R5NH45 1R5NU41 1R5NZ41 1R5TH61 1S90 1S90R 1S91 1S91R 1S92 1S92R 1S93

Contextual Info: - V 9 6 1 P B C Rev. B1 LOCAL BUS TO PCI BRIDGE FOR i960 Jx AND PowerPC 401 Gx PROCESSORS yi '« IC O * ’ • Glueless interface between i960Jx, PPC401Gx processors and the PCI bus • Large, 576-byte FIFOs using V3’s unique D y n a m ic B a n d w id t h A l l o c a t io n ™ architecture

Contextual Info: SN54ALVTH16374, SN74ALVTH16374 2.5-V/3.3-V 16-BIT EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS _ SCES068D - JUNE 1996-REVISED JANUARY 1998 • • • • description The ’ALVTH16374 devices are 16-bit edge-triggered D-type flip-flops with 3-state

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

Contextual Info: ^ CELESTICA- 2M x 32 FPM SIMM FEATURES • • 72-pin industry standard 4-byte single-in-line memory module JED EC compliant: 21-C, Fig. 4-18 A,B. Fig- 4-6 Release 6 No.95 MO-116 Supports 90°, 40° and 22.5° connectors High performance, CMOS Single 5V ± 10% power supply

Contextual Info: ADVANCE 256K MT58LC256K16/18G1 16/18 SYNCBURST SRAM 256Kx 16/18 SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View

Contextual Info: a High Output Current Amplifiers w/ Power Down Preliminary Technical Data_ AD8016 FEATURES □ □ Vinnl J ne C ne E ne C L Vinn2 nc A D 80 1 6A R P nc nc PWDN0 PWDN1 C -V1 Vout2 CM CL Vinpl GND C Low Power O peratio n 1.5W T otal pow er d is s ip a tio n ru n nin g full rate