1SS133 DIODE Search Results

1SS133 T-77

Contextual Info: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction

1SS133

Contextual Info: 1SS133 Diodes High-speed switching diode 1SS133 !External dimensions Units : mm !Applications High speed switching CATHODE BAND !Features 1) Glass sealed envelope. (MSD) 2) High reliability. 3) High speed. (trr=1.2ns Typ.) φ0.4±0.1 22Min. φ1.8±0.2 22Min.

1SS133 T77

Abstract: diode T-77 1SS133 1SS133 T-77 T-77 diode T77 t 77 do-34 rohm
Contextual Info: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction

1SS133

Abstract: do-34 rohm
Contextual Info: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction

1SS133

Abstract: 29010
Contextual Info: 1SS133 Diodes Switching diode 1SS133 !External dimensions Units : mm !Applications High speed switching CATHODE BAND (YELLOW) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 29.0±1.0 2.7±0.3

1SS133

Abstract: diode 1ss133
Contextual Info: 1SS133 Diodes Switching diode 1SS133 !External dimensions Units : mm !Applications High speed switching CATHODE BAND (YELLOW) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 29.0±1.0 2.7±0.3

1SS133

Contextual Info: 1SS133 Diodes Switching diode 1SS133 !External dimensions Units : mm !Applications High speed switching CATHODE BAND (YELLOW) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 29.0±1.0 2.7±0.3

1SS133

Abstract: 1ss133 diode DIODE 1SS133 ROHM 1SS133 diode switching do-34 rohm yellow band glass diode
Contextual Info: 1SS133 Diodes High-speed switching diode 1SS133 ! Applications External dim ensions Units : mm High speed switching ! Features 1) Glass sealed envelope. (MSD) 2) High reliability. 3) High speed. (trr=1,2ns Typ.) I Construction Silicon epitaxial planar ! Absolute maximum ratings (Ta=25°C)

1SS133

Contextual Info: K /D io d es 1SS130/1SS131 /1SS132 /1SS133/1SS134 1SS130/1SS131/1SS132 1SS133/ 1SS134 y U □ > l v 7 f K Silicon Epitaxial Planar High-Speed Switching Diodes • W KTfSIH /Dim ensions Unit : mm 1) S / J 'S » T * S o 2) M i t m & T & Z ' . 3) itS lJ t (trr=2ns Typ.) ? & 5 o

1SS133

Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE 1SS133 REVERSE VOLTAGE : 90 V CURRENT: 0.2 A FEATURES DO - 34 GLASS Glass sealed envelope. (MSD) VRM=250V guaranteed High reliability MECHANICAL DATA Case: DO-34, glass case Polarity: Color band denotes cathode

1SS133

Contextual Info: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol

DIODE 1SS133

Abstract: 1SS133 1ss133 diode diode
Contextual Info: Diodes High–speed switching diode 1SS133 FApplications High speed switching FExternal dimensions Units: mm FFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3) High speed. (typical recovery time = 1.5ns) FConstruction Silicon epitaxial planar

Contextual Info: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol

1SS133

Contextual Info: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol

1SS133

Abstract: SEMTECH 1SS133
Contextual Info: 1SS133 HIGH SPEED SWITCHING DIODE Features • Glass sealed envelope. MSD • High speed. (trr = 1.2ns Typ.) • High reliability. Construction • Silicon epitaxial planar. Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Limits Unit Peak Reverse Voltage

Contextual Info: 1SS133 Small Signal Switching Diodes REVERSE VOLTAGE : 90 V CURRENT: 110 mA DO - 35 GLASS Features Glass sealed envelope. (MSD) High reliability Mechanical Data Case: DO-35, glass case Polarity: Color band denotes cathode Dimensions in millimeters Weight: 0.005 ounces, 0.14 grams

1SS133

Abstract: 1ss133 diode
Contextual Info: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol

SEMTECH 1SS133

Abstract: 1SS133
Contextual Info: 1SS133 HIGH SPEED SWITCHING DIODE Features • Glass sealed envelope. MSD • High speed. (trr = 1.2ns Typ.) • High reliability. Construction • Silicon epitaxial planar. Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Limits Unit Peak Reverse Voltage

SEMTECH 1SS133

Abstract: 1SS133
Contextual Info: 1SS133 HIGH SPEED SWITCHING DIODE Features • Glass sealed envelope. MSD • High speed. (trr = 1.2ns Typ.) • High reliability. Construction • Silicon epitaxial planar. Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Limits Unit Peak Reverse Voltage

DIODE 1SS133

Abstract: 1SS133
Contextual Info: 1SS133 SMALL SIGNAL DIODE VOLTAGE: 90V CURRENT: 130mA FEATURE DO-34 Silicon Single Junction Diode Fast switching Diode MECHANICAL DATA Case: DO-34 Glass case Polarity: color band denotes cathode Mounting position: any Weight: approx . 0.12g Dimensions in inches and millimeters

1N9168

Abstract: 1SR35-100A 1SS135 1N41S4 1S2473 RB100A 1n700 1ss252 RB721Q ZENER3
Contextual Info: Diodes Quick reference tmmmmmmmmmmmmmmi I Application Vr V MSR ( ¿2.5) I Molded I SP9Pln Package 100-35 (41.8) Part No. I TO-220FD Ultra High-speed Low-leakage High-vottage Switching « I 00-34 U 1.8) IUSD (¿1.8) 10041(417) 1S82787 1SS 134 1SS133 50 1S2472

1SS133

Abstract: DIODE 1SS133
Contextual Info: LESHAN RADIO COMPANY, LTD. Switching diode 1SS133 . 300mW DO-34 . Glass silicon switching diodes We declare that the material of product compliance with RoHS requirements. Product Characteristic Absolute Maximum Ratings Ta=25°C TYPE VRM(V) VR(V) IFM(mA)

1SS133

Abstract: v405
Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE 1SS133 REVERSE VOLTAGE : 35 V CURRENT: 110 mA FEATURES DO - 35 GLASS Glass sealed envelope. (MSD) High reliability MECHANICAL DATA Case: DO-35, glass case Polarity: Color band denotes cathode Weight: 0.005 ounces, 0.14 grams

1SS133

Contextual Info: TH97/10561QM 1SS133 TW00/17276EM IATF 0060636 SGS TH07/1033 HIGH SPEED SWITCHING DIODE DO - 34 Glass FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free 1.00 25.4