1SS200 Search Results
1SS200 Price and Stock
Qualtek Electronics Corporation Q2-F-3-4-01-SS200FTHEATSHRINK 3/4" BLACK |
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Q2-F-3-4-01-SS200FT | 16,200 | 200 |
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Qualtek Electronics Corporation Q2-F-1-2-01-SS200FTHEATSHRINK 1/2" BLACK |
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Q2-F-1-2-01-SS200FT | 5,000 | 200 |
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Qualtek Electronics Corporation Q2-F-5-8-01-SS200FTHEATSHRK BLK 5/8X3" 50=50PC |
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Q2-F-5-8-01-SS200FT | Bulk | 3,050 | 50 |
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Qualtek Electronics Corporation Q5-3X-1-8-01-SS200MHEATSHRINK 0.12" X 656.2' BLACK |
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Q5-3X-1-8-01-SS200M | Bulk | 25 | 1 |
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Qualtek Electronics Corporation Q2-Z-1-2-01-SS200FTHEATSHRINK 1/2" X 200' BLACK |
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Q2-Z-1-2-01-SS200FT | Bulk | 20 | 1 |
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1SS200 Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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1SS200 |
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Diode - Silicon Epitaxial Planar Type | Original | 156.84KB | 3 | |||
1SS200 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 99.06KB | 1 | |||
1SS200 | Unknown | The Diode Data Book with Package Outlines 1993 | Scan | 86.81KB | 2 | |||
1SS200 |
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DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) | Scan | 128.18KB | 2 |
1SS200 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 1SS200 TO SHIBA 1SS200 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • Low Forward Voltage : Vp 3 = 0.92V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.) Small Total Capacitance : CT = 2.2pF (Typ.) |
OCR Scan |
1SS200 55MAX. 961001EAA2' | |
1SS200Contextual Info: 1SS200 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Unit: mm Ultra High Speed Switching Application z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) Absolute Maximum Ratings (Ta = 25°C) |
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1SS200 1SS200 | |
TOSHIBA 1N DIODEContextual Info: TOSHIBA 1SS200 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS2Q0 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. Low Forward Voltage : Vp 3 = 0.92V (Typ.) Fast Reverse Recovery Time : trr = 1.6ns (Typ.) Small Total Capacitance : C^ =2 .2pF' (Typ.) |
OCR Scan |
1SS200 55MAX 961001EAA2' TOSHIBA 1N DIODE | |
1SS200Contextual Info: 1SS200 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Unit: mm Ultra High Speed Switching Application Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Maximum Ratings (Ta = 25°°C) |
Original |
1SS200 1SS200 | |
Contextual Info: 1SS200 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Ultra High Speed Switching Application Low forward voltage Unit in mm : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Maximum Ratings (Ta = 25°°C) |
Original |
1SS200 961001EAA2' | |
1SS200Contextual Info: TOSHIBA 1SS200 1 SS200 SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • Low Forward Voltage : Vp 3 = 0.92V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.) Small Total Capacitance : Cx = 2.2pF (Typ.) 0 .5 5 M A X . |
OCR Scan |
1SS200 961001EAA2' 1SS200 | |
1SS200Contextual Info: 1SS200 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Unit: mm Ultra High Speed Switching Application z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) Absolute Maximum Ratings (Ta = 25°C) |
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1SS200 1SS200 | |
1SS200
Abstract: DIODE 1SS200
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1SS200 1SS200 DIODE 1SS200 | |
TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
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OCR Scan |
015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P | |
diode Z47
Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
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OCR Scan |
HN2D01FU HN2D02FU OT-23MOD) 02CZ5 diode Z47 z43 diode Z5.6 Z3.3 S360 DIODE diode Z27 S368 diode zener z6 1s diode | |
2fu smd transistor
Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
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TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B | |
TC7SZ08FU
Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent
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3407C-0209 TC7SZ08FU lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent | |
Transistor mcr 22-8 412Contextual Info: O rd er U lis d a ta s h e e t b y H 4C /D MOTOROLA H4C SERIES SEMICONDUCTOR TECHNICAL DATA Advance Information H4C SERIES CMOS ARRAYS and the CDA™ ARCHITECTURE H IG H PER FO R M A N C E T R IP L E LAYER M ETA L The s u b -m ic ro n H 4 C S eries'“ CM O S gate array family and the new |
OCR Scan |
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
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RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 |