1SS37 Search Results

1SS379

Abstract: 0-110A
Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Diode 1SS379 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Small total capacitance: CT=3.0pF Typ. 1 0.55 Low reverse current: IR=0.1nA(Typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 Low forward voltage :VF=1.0V(Typ.)

"UHF DETECTOR"

Contextual Info: Ordering number:EN4690 _ 1SS375 No.4690 Schottky B arrier Diode SANYO i VHF, UHF detector and Mixer Applications F e a tu re s •Series connection of 2 elem ents in a very sm all-sized package facilitates high-density m ounting and perm its lSS375-applied equipm ent to be made sm aller.

Contextual Info: Diodes High–voltage band switching diode 1SS376 FApplications High voltage switching FExternal dimensions Units: mm FFeatures 1)ăHigh reliability. 2)ăSmall surface mounting type. (UMD2) 3)ăPeak reverse voltage guaranteed at 300V with this size. FConstruction

Diodes smd marking f5 reverse voltage

Abstract: MA1060 marking f5 SOT-23 F5 Diodes smd f5 1ss370 smd marking f5 1SS370
Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Type 1SS370 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 :VF 3 = 0.9 V(Typ) :trr = 60ns (MAX.) :CT = 1.5 pF(Typ) 1 0.55 Small total capacitance +0.1 1.3-0.1 Fast reverse recovery time +0.1 2.4-0.1 Low forward voltage

1SS377

Abstract: marking O9
Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING DOIDE 1SS377 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VR =0.23V Typ . @IF = 5mA 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

Contextual Info: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in mm z Low forward voltage : VF = 0.23V typ. @IF = 5mA z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V

Contextual Info: Product specification 1SS374 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VR =0.23V Typ . @IF = 5mA 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

Contextual Info: Product specification 1SS372 Features Low forward voltage:VF = 0.23 V Typ @ IF = 5mA Absolute M axim um R atings T a = 25 Param eter M axim um (peak) reverse voltage Sym bol Rating Unit V RM 15 V Reverse voltage VR 10 V M axim um (peak) forward current I FM

1SS373

Contextual Info: 1SS373 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS373 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

Contextual Info: TO SHIBA 1SS370 1 SS370 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS • • • • Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package 2.1 Vf 2 = 0.9V (TYP.)

Contextual Info: 1SS378 TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type 1SS378 High Speed Switching Unit: mm l Low forward voltage : VF = 0.23V typ. @IF = 5mA l Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

Contextual Info: 1SS379 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS379 General Purpose Rectifier Applications l Low forward voltage : VF = 1.0V typ. l Low reverse current : IR = 0.1nA (typ.) l Small total capacitance : CT = 3.0pF (typ.) l Small package : SC-59 Unit in mm

schottky marking code PD

Contextual Info: 1SS372W SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Applications • High speed switching 3 1 2 Marking Code: ME Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Average Forward Current

1SS370

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode SOT-323 1SS370 SWITCHING DIODE 1. ANODE 2. N.C. FEATURES z Small surface mounting type z High Speed z High reliability with high surge current handing capability 3. CATHODE

1SS376

Abstract: band switching diode 300V switching transistor
Contextual Info: Diodes High–voltage band switching diode 1SS376 FExternal dimensions Units: mm Switching diodes FApplications High voltage switching High–voltage switching diodes FFeatures 1)ăHigh reliability. 2)ăSmall surface mounting type. (UMD2) 3)ăReak reverse voltage guaranteed at 300V with this

Contextual Info: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit in mm Small package Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

marking code RB

Abstract: rb marking code 1SS373WT
Contextual Info: 1SS373WT SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 RB Top View Marking Code: "RB" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol

Contextual Info: 1SS378 TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type 1SS378 High Speed Switching Unit: mm z Low forward voltage : VF = 0.23V typ. @IF = 5mA z Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM

1SS377

Contextual Info: 1SS377 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS377 ○ 高速スイッチング用 単位: mm z 小型外囲器なので高密度実装に最適です。 z 順方向電圧が低い。 : VF = 0.23V 標準 @IF = 5mA

Contextual Info: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15

Contextual Info: 1SS379 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS379 General Purpose Rectifier Applications z Small package : SC-59 z Low forward voltage : VF = 1.0V typ. z Low reverse current : IR = 0.1nA (typ.) z Small total capacitance : CT = 3.0pF (typ.) Unit: mm

Contextual Info: 1SS373 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS373 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

diode sy 180 10

Abstract: 1ss373
Contextual Info: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • Low forward voltage: DESCRIPTION PIN VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol

smd transistor fh

Abstract: UHF DETECTOR 1SS375
Contextual Info: Diodes SMD Type VHF,UHF Detector and Mixer Applications 1SS375 Features Series connection of 2 elements in a very small-sized package facilitates high-density mounting and permits 1SS375-applied equipment to be made smaller. Small interterminal capacitance.