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    1SS398 Price and Stock

    Toshiba America Electronic Components 1SS398TE85LF

    DIODE ARRAY GP 400V 100MA SMINI
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    DigiKey 1SS398TE85LF Cut Tape 30,128 1
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    1SS398TE85LF Digi-Reel 30,128 1
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    1SS398TE85LF Reel 30,000 3,000
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    Mouser Electronics 1SS398TE85LF 23,973
    • 1 $0.46
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    Verical 1SS398TE85LF 12,472 311
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    1SS398TE85LF 3,235 45
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    Toshiba America Electronic Components 1SS398(TE85LF)

    Diode Switching 420V 0.1A 3-Pin S-Mini T/R - Tape and Reel (Alt: 1SS398TE85LF)
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    Avnet Americas 1SS398(TE85LF) Reel 3,000
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    Avnet Asia 1SS398(TE85LF) 24 Weeks 3,000
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    Toshiba America Electronic Components 1SS398(TE85L,F)

    Schottky Diode, 420V, 0.1A, To-236 Rohs Compliant: Yes |Toshiba 1SS398(TE85L, F)
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    Newark 1SS398(TE85L,F) Cut Tape 5,500 5
    • 1 $0.51
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    • 100 $0.239
    • 1000 $0.151
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    Quest Components 1SS398(TE85L,F) 9,977
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    Chip1Stop 1SS398(TE85L,F) Cut Tape 3,235
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    • 100 $0.222
    • 1000 $0.15
    • 10000 $0.128
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    EBV Elektronik 1SS398(TE85L,F) 27 Weeks 3,000
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    Toshiba America Electronic Components 1SS398

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    Bristol Electronics 1SS398 3,000
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    Toshiba America Electronic Components 1SS398-TE85LF

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 1SS398-TE85LF 3,000
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    1SS398 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS398 Toshiba Diode - Silicon Epitaxial Pin Type Original PDF
    1SS398 Toshiba DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS) Scan PDF
    1SS398 Toshiba DIODE Scan PDF
    1SS398(TE85L,F) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 400V 100MA S-MINI Original PDF
    1SS398TE85LF Toshiba America Electronic Components DIODE SW 400V 100MA S-MINI Original PDF

    1SS398 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SS398

    Abstract: No abstract text available
    Text: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min) Unit: mm Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance


    Original     		PDF 1SS398 SC-59 1SS398

    Untitled

    Abstract: No abstract text available
    Text: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications l Low forward voltage : VF = 1.0V typ. l High voltage : VR = 400V (min) Unit: mm l Fast reverse recovery time : trr = 0.5µs (typ.) l Small total capacitance


    Original     		PDF 1SS398 SC-59 O-236MOD 100mA

    1SS398

    Abstract: No abstract text available
    Text: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications Unit in mm Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min) Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance


    Original     		PDF 1SS398 SC-59 961001EAA2' 1SS398

    Untitled

    Abstract: No abstract text available
    Text: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High-Voltage, High-Speed Switching Applications z Low forward voltage: Unit: mm VF = 1.0 V typ. @ IF = 100 mA z Fast reverse recovery time: trr = 0.5 s (typ.) z Small total capacitance: CT = 2.5 pF (typ.)


    Original     		PDF 1SS398 SC-59

    1SS398GP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 1SS398GP SURFACE MOUNT SWITCHING DIODE VOLTAGE 400 Volts CURRENT 100 mAmpere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed and fast reverse recovery time: Trr<0.5uSec * Suitable for high packing density.


    Original     		PDF 1SS398GP OT-23) 150mW 1SS398GP

    1SS398

    Abstract: No abstract text available
    Text: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications l Low forward voltage : VF = 1.0V typ. l High voltage : VR = 400V (min) Unit: mm l Fast reverse recovery time : trr = 0.5µs (typ.) l Small total capacitance


    Original     		PDF 1SS398 SC-59 1SS398

    marking 8D SOT 89

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 1SS398PT SURFACE MOUNT SWITCHING DIODE VOLTAGE 400 Volts CURRENT 100 mAmpere APPLICATION * Ultra high speed switching FEATURE SC-59/SOT-346 * Small surface mounting type. SC-59/SOT-346 * High speed and fast reverse recovery time: Trr<0.5uSec


    Original     		PDF 1SS398PT SC-59/SOT-346 SC-59/SOT-346) 150mW marking 8D SOT 89

    1SS398

    Abstract: No abstract text available
    Text: 1SS398 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS398 ○ 高電圧スイッチング用 z z z z 外形が小さい。 順方向特性が良い。 逆回復時間が短い。 端子間容量が小さい。 単位: mm : VF = 1.0 V 標準 @ IF = 100 mA


    Original     		PDF 1SS398 236MOD 1SS398

    1SS398

    Abstract: No abstract text available
    Text: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High-Voltage, High-Speed Switching Applications z Low forward voltage: Unit: mm VF = 1.0 V typ. @ IF = 100 mA z Fast reverse recovery time: trr = 0.5 s (typ.) z Small total capacitance: CT = 2.5 pF (typ.)


    Original     		PDF 1SS398 SC-59 1SS398

    1SS398

    Abstract: No abstract text available
    Text: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications z Low forward voltage : VF = 1.0V typ. z High voltage : VR = 400V (min) Unit: mm z Fast reverse recovery time : trr = 0.5 s (typ.) z Small total capacitance


    Original     		PDF 1SS398 SC-59 1SS398

    marking 8d

    Abstract: 1SS398PT 1p sot23
    Text: CHENMKO ENTERPRISE CO.,LTD 1SS398PT SURFACE MOUNT SWITCHING DIODE VOLTAGE 400 Volts CURRENT 100 mAmpere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed and fast reverse recovery time: Trr<0.5uSec * Suitable for high packing density.


    Original     		PDF 1SS398PT OT-23) 150mW marking 8d 1SS398PT 1p sot23

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    CHN222

    Abstract: CH228K marking wa sot-23 SOT-23 marking a8 CHN11 chn22 CHBD2004 CHN202U sot-23 MARKING A7 CHN217
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Maximum Maximum Peak Average Reverse Rectified Voltage Current IO PRV VPK mAAV Maximum Reverse Current @ 25°C TA Maximum Forward Peak Surge Current @ 1S IFM Surge APK IR uAdc VR V 0.5(1S) 1(10mS)


    Original     		PDF 250mA SC-88 CHN10 CH227 BAS16D MMBD4448 BAW56D CHP11N CHP11 CHN222 CH228K marking wa sot-23 SOT-23 marking a8 CHN11 chn22 CHBD2004 CHN202U sot-23 MARKING A7 CHN217

    LT 543 common cathode

    Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current


    Original     		PDF 2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor

    wa sot23

    Abstract: BAV99TPT 1SS355PT CHBD2004SPT CHP202UPT CH204UPT SOT 23 A7 diode 5d sot 23 CHN202UPT Diode SOT-23 marking JE
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Maximum Maximum Maximum Maximum Reverse Peak Average Forward Peak Current Reverse Rectified Surge Current Marking @ 25°C TA Voltage Current @ 1S IO IFM Surge IR


    Original     		PDF 1SS400GPT BD4148FPT MMBD4448FPT 1SS387PT 1SS420PT 1SS400PT 1SS380PT MMBD4448HPT 1SS355PT 1SS358PT wa sot23 BAV99TPT 1SS355PT CHBD2004SPT CHP202UPT CH204UPT SOT 23 A7 diode 5d sot 23 CHN202UPT Diode SOT-23 marking JE

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558

    CMZB220

    Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
    Text: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード


    Original     		PDF SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 1SS398 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE 1SS398 HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage : V f = 1.0V Typ. High Voltage : V r = 400V (Min.) Unit in mm + 0.5 2.5 -0 .3 + 0.25 1 .5 -0 .1 5 Fast Reverse Recovery Time ; trr = 0.5^s (Typ.)


    OCR Scan     		PDF 1SS398 SC-59 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: 1SS398 TO SHIBA 1SS398 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package : Vp= 1.0V Typ. : VR = 400V (Min.)


    OCR Scan     		PDF 1SS398 SC-59 961001EAA2'

    1SS398

    Abstract: No abstract text available
    Text: TOSHIBA 1SS398 1 SS398 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package VF = 1.0V Typ. V r = 400V (Min.)


    OCR Scan     		PDF 1SS398 SC-59 300pi 961001EAA2' 1SS398

    Untitled

    Abstract: No abstract text available
    Text: 1SS398 TO SHIBA 1SS398 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package : V p = 1.0V Typ. : VR = 400V (Min.)


    OCR Scan     		PDF 1SS398 SC-59 961001EAA2'