1SS42 Search Results

Contextual Info: 1SS427 Switching Diodes Silicon Epitaxial Planar 1SS427 1. Applications • Ultra-High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode fSC SOD-923 1: Cathode 2: Anode fSC Start of commercial production 1 2005-12 2014-04-14 Rev.2.0 1SS427

1SS421

Contextual Info: 1SS421 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS421 High-Speed Switching Application Unit: mm Low forward voltage: VF 3 = 0.50V (max) Abusolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Reverse voltage VR 30 V Maximum (peak) forward current

Contextual Info: 1SS427 Switching Diodes Silicon Epitaxial Planar 1SS427 1. Applications • Ultra-High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode fSC SOD-923 1: Cathode 2: Anode fSC 1 2014-02-20 Rev.1.0 1SS427 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOD-523 Package Weight mg 2 Product Group Type No. RB751S-40 1SS389 1SS388 BAT54X RB520S-30 RB521S-30 1SS387 1SS400 1SS422 BAS16X NSD914X BAS516 BZX584C2V0 – BZX584C51

marking 6

Contextual Info: 1SS422 High Speed Switching Diodes SOD-523 Features — High reliability with high surge current handing capability. — Small package. — High speed. Dimensions in inches and millimeters Applications — High speed switching. Ordering Information Type No.

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 1SS420PT SURFACE MOUNT SWITCHING DIODE VOLTAGE 85 Volts CURRENT 0.15 Ampere APPLICATION * Ultra high speed switching SC-79/SOD-523 FEATURE * Small surface mounting type. SC-79/SOD-523 * High speed. (TRR=4.0nSec Typ.) * Suitable for high packing density.

1SS424

Contextual Info: 1SS424 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS424 High-Speed Switching Applications z Low forward voltage Unit: mm : VF 3 = 0.50 V (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 30 V Reverse voltage VR

1SS420

Contextual Info: 1SS420 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications • Unit: mm Low reverse current: IR = 5 A max Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 35 V Reverse voltage VR 30

Contextual Info: 1SS420 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications • Unit: mm Low reverse current: IR = 5 A max Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 35 V Reverse voltage VR 30

1SS427

Contextual Info: 1SS427 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS427 ○ 超高速スイッチング用 0.6±0.05 絶対最大定格 Ta = 25℃ せ ん 頭 逆 逆 電 電 記号 定格 単位 圧 VRM 85 V 圧 VR 80 V せ ん 頭 順 電

Contextual Info: 1SS423 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS423 Ultra-High-Speed Switching Applications • Small package • Low forward voltage: VF 3 = 0.56 V (typ.) • Low reverse current: IR = 5 A (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 1SS422 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications • • Unit: mm Low forward voltage VF = 0.23 V typ. @ IF = 5 mA Small package suitable for mounting on a small space Absolute Maximum Ratings (Ta = 25°C)

1SS422

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS422 High Speed SWITCHING Diodes FEATURES z z z Small surface mounting type High Speed High reliability with high surge current handing capability MARKING: 6 Maximum Ratings and Electrical Characteristics, Single Diode @TA= 25℃

1SS424

Contextual Info: 1SS424 東芝ダイオード エピタキシャルショットキバリア形 1SS424 ○ 高速スイッチング用 : VF 3 = 0.5 V (標準) 順電圧が小さい。 絶対最大定格 (Ta = 25°C) 項 せ ん 目 頭 逆 逆 記 電 電 号 定 格 単位

1SS422

Contextual Info: Transys Electronics L I M I T E D SOD-523 Plastic-Encapsulated Diodes 1SS422 High Speed SWITCHING Diodes FEATURES z z z Small surface mounting type High Speed High reliability with high surge current handing capability MARKING: 6 Maximum Ratings and Electrical Characteristics, Single Diode @T A= 25℃

1SS422

Contextual Info: 1SS422 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications Unit: mm Low forward voltage VF = 0.23 V typ. @IF = 5 mA • Small package suitable for mounting on a small space Absolute Maximum Ratings (Ta = 25°C) Characteristics

1SS423

Contextual Info: 1SS423 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS423 ○ 超高速スイッチング用 単位: mm z 2 端子小型外囲器なので高密度実装に最適です。 z 順方向特性が良い。 : VF 3 = 0.56V (標準)

1ss421

Contextual Info: 1SS421 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS421 High-Speed Switching Application Unit: mm Low forward voltage: VF 3 = 0.50V (max) Abusolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 30 V Maximum (peak) forward current

Contextual Info: 1SS420CT 東芝ダイオード エピタキシャルショットキバリア形 1SS420CT ○ 高速スイッチング用 : IR = 5 A 最大 せ ん 目 頭 逆 逆 記 電 電 号 定 格 単位 圧 VRM 35 V 圧 VR 30 V せ ん 頭 順 電 流 IFM 300 mA

1ss420

Contextual Info: 1SS420 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE High Speed Switching Application Features • Low reverse current: IR=5µA max. Absolute Maximum Ratings (Tj = 25℃) Parameter Symbol Value Unit Peak Reverse Voltage VRM 35 V Reverse Voltage VR 30 V

1SS422

Abstract: SC-79
Contextual Info: 1SS422 High Speed SWITCHING Diodes SOD-523 .059 1.50 .067(1.70) .006(0.15) .0098(0.25) .043(1.10) .051(1.30) .0098(0.25) .014(0.35) 1 2 .028(0.70) .035(0.90) .012(0.50) .028(0.70) .003(0.07) .008(0.20) FEATURES APPLICATIONS Small suface mounting type High Speed

marking E5

Abstract: 1SS422 marking code e5 diode E5 MARKING MARKING 4 SOD523
Contextual Info: TAK CHEONG SEMICOND UC TOR 200mW SOD-523 SURFACE MOUNT Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter PD Power Dissipation TSTG Storage Temperature Range TJ 1SS422 Very Small Outline Flat Lead Plastic Package General Purpose Application

1SS426

Contextual Info: 1SS426 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS426 Ultra-High Speed Switching Applications Unit: mm z Low forward voltage CATHODE MARK z Compact 2-pin package: Ideal for high-density mounting : VF 3 = 0.98 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.)

SOD-523

Abstract: SOD523 1SS422 marking 6
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS422 High Speed SWITCHING Diodes SOD-523 + FEATURES z Small surface mounting type z High Speed z High reliability with high surge current handing capability - MARKING: 6