1T745D3 Search Results

FET 4953

Abstract: EL 431 044 PBA FET CFK2162-P5 CFK2162-P5-000T R15-G IGD 507 an
Contextual Info: « i e o i K Product S p ecificatio n s D ecem ber 1997 iof4 2.3 to 2.5 GHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products

Contextual Info: « i f i i m i CFK2162-P3 r Product Specifications D ecem b er 1997 iof4 1.8 to 2.0 GHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products

CF004-01

Abstract: CF004-03 CF004 CF004-02 1309M
Contextual Info: CF004 Series GaAs Chips Specifications T^ = 25°C CF004-01 CF004-02 CF004-03 Ion Implanted Epitaxial Pseudomorphic HEMT Active Layer Frequency (GHz) Units Optimum Noise Figure ^D S = 3-0 V. Iq s = 10 mA 18.0 dB Gain at NFopt V DS = 3.0 Vi lDS = 10 mA 18.0

IGD 507 an

Contextual Info: m CDIKV Product S pecificatio n s D ecem ber 1 9 9 7 CFK2162-P5 2.3 to 2.5 GHz +34 dBm Power GaAs FET 1 of 4 Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products

Contextual Info: B -CELERITEK_ CAS1401 A m plifier-Sw itch 1.7 to 2.2 GHz 200m W +23 dB m June 1995 (1 of 4) F u n ctio n a l B lo ck D iagram T/R modes switched with amplifier supply -vg F eatu res J 200mW (+23 dBm) output power !J 20% power added efficiency (including output switch loss)

lambda LMS

Abstract: 5B42 CFK2162-P3 CFK2162-P3-000T
Contextual Info: « i m w i P ro d u c t S p e c ific a tio n s D ecem ber 1997 iof4 CFK2162-P3 r 1.8 to 2.0 GHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power O utput □ P roprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third O rder Products