1X12 VCSEL Search Results

EMCORE VCSEL

Abstract: 87109 1x12-Multimode-VCSEL-Array vcsel array
Contextual Info: Gigarray with OxideGuide™ 1x12 Multimode VCSEL Array Electro-Optical Characteristics (T=25°C, single element, unless otherwise stated) Parameter Peak Wavelength Spectral Width Peak Wavelength Temperature Coefficient o o (25 C-80 C) Threshold Current

Contextual Info: TSA-8B12-000 High Performance Oxide-Confined VCSEL FEATURES: • 1x12 array configuration. • Capable to run data rate of 2.5/3.125 Gbps per channel. • Planar surface structure for non-hermetical applications. • Low threshold current to enhance device reliability.

VCSEL array, 850nm

Abstract: VCSEL array, 850nm, multi-mode Avalon Photonics APA4101040000 1x12 VCSEL avalon-photonics APA4101080000 APA4101120000 vcsel array
Contextual Info: N x 10 Gbps Multi-Mode VCSEL Array March 2003 Preliminary Datasheet Mechanical Solder Pad Features • 850nm wavelength range wavelength • High uniformity 480 1x8 and • 1x4, 1x12 arrays threshold • Low current rates • Data up to 12.5 Gbps bondable,

Contextual Info: AXT PRODUCT INFORMATION Preliminary 850 nm two-top contact 1x12 oxide VCSEL Specs High-speed datacom & general purpose, >2.5Gbps Dimension (3100)X(460)X(150) µm³ Parts number: VX-CA1C 1. Optical and Electrical Characteristics Parameter Symbol Min. TYP.

AP-A41-0104-0000

Abstract: VCSEL array, 850nm VCSEL array, 850nm, multi-mode vcsel array AP-A41-0108-0000
Contextual Info: N x 10 Gbps Multi-Mode VCSEL Array November 2004 Preliminary Datasheet Mechanical Solder Pad Features • 850nm wavelength range wavelength • High uniformity 480 1x8 and • 1x4, 1x12 arrays threshold • Low current rates • Data up to 12.5 Gbps bondable,

VCSEL-ULM850-14-TT-F

Contextual Info: 14 Gbps VCSEL 850 nm 1x4 1x12 chip Vertical Cavity Surface-Emitting Laser  Cathode on top side  Unsealed 85% r.H./85°C certified  Suitable for wirebond and flipchip process  Preliminary ELECTRO-OPTICAL CHARACTERISTICS Chip Temperature = 25°C unless otherwise stated.

3068

Abstract: VG2B-7810 ARRAY VCSEL
Contextual Info: 48400 Fremont Blvd. Fremont, CA 94538 Tel: 510 445-3068 x244 Fax: (510) 445-3060 Low Threshold 30 Gbps 850 nm 1x12 Array VCSEL Part Number: VG2B-7810 Applications: 30 Gbps aggregate speed Absolute Maximum Ratings (T = 25°C): Parameter Symbol Unit Min. Max.

VG1C

Contextual Info: 48400 Fremont Blvd. Fremont, CA 94538 USA Tel: 510 445-3068 x 244 Fax: (510) 445-3060 15 Gbps 1x12 Array 850 nm VCSEL Part Number: VG1C-7800 Applications: 15 Gbps aggregate speed Absolute Maximum Ratings (T = 25°C): Parameter Symbol Unit Min. Max. Forward Current

V850-2093-002

Abstract: 1310nm fiber optic for 10Gbps VCSEL array driver Finisar 1x12 VCSEL VCSEL array, 850nm 10GBPS 850NM T-25 laser DFB 1550nm 10mW 1310nm VCSEL transceivers
Contextual Info: DATA SHEET 10GBPS 850NM VCSEL ARRAYS V850-2092-002, V850-2093-002 FEATURES: 850nm cathode common VCSEL array Capable of 10Gbps per channel modulation Fully tested and Burned in with STABILAZETM process 1x4 and 1x12 version The V850-209x-002 are high-performance 850 nm VCSEL Vertical Cavity

vcsel array

Contextual Info: 48400 Fremont Blvd. Fremont, CA 94538 USA Tel: 510 445-3068 x 244 Fax: (510) 445-3060 30 Gbps 1x12 Array 850 nm VCSEL Part Number: VG2C-7800 Applications: 30 Gbps aggregate speed Absolute Maximum Ratings (T = 25°C): Parameter Symbol Unit Min. Max. Forward Current

ULM850-14-TT-N0112U

Abstract: ULM850-14-TT-N0101U
Contextual Info: 14 Gbps VCSEL 850 nm 1x1/4/12 chip Vertical Cavity Surface-Emitting Laser 1 Cathode on top side 1 Unsealed 85% r.H./85°C certified 1 1x1, 1x4, 1x12 chips 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT Preliminary ELECTRO-OPTICAL CHARACTERISTICS

Contextual Info: DATA SHEET 10GBPS 850NM VCSEL ARRAYS V850-2092-002, V850-2093-002 FEATURES: 850nm cathode common VCSEL array Capable of 10Gbps per channel modulation Fully tested and Burned in with STABILAZETM process 1x4 and 1x12 version The V850-209x-002 are high-performance 850 nm VCSEL Vertical Cavity

VCSEL array, 850nm flip

Abstract: VCSEL array, 850nm, flip chip amplifier CV 203 VCSEL array, 850nm GaAs array, 850nm PIN photodiode 850nm LX3044 LX3045 LX3046 PIN PHOTO DIODE
Contextual Info: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes

amplifier CV 203

Abstract: VCSEL array, 850nm flip GaAs array, 850nm vcsel array Photo Diode
Contextual Info: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes

Contextual Info: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes

Contextual Info: N x 3.125 Gbps Multi-Mode VCSEL Array November 2004 80 µm 105 µm 125 µm Features • 250 µm 850nm wavelength range • High wavelength uniformity rates • Data up to 4.25 Gbps • 980 µm for 1x4 Low threshold current 1980 µm for 1x8 2980 µm for 1x12

amplifier CV 203

Abstract: VCSEL array, 850nm flip GaAs array, 850nm diode array die VCSEL array, 850nm, flip chip
Contextual Info: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes

VCSEL array, 850nm flip

Contextual Info: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes

100C

Abstract: VG2A-7800
Contextual Info: th 50, Lung-Yuan 7 Road, Lung-Tan Tao-Yuan Hsien, TAIWAN Tel: 03 409-1335 x230/235 Fax: (03) 409-1339 48400 Fremont Blvd. Fremont, CA 94538 USA Tel: (510) 445-3068 x244 Fax: (510) 445-3060 30 Gbps 850 nm VCSEL 1x12 Array Data Sheet Part Number: VG2A-7800

VCSEL array, 850nm

Abstract: VCSEL array, 850nm, multi-mode Avalon Photonics 1x8APA7201120000 850nm VCSEL application avalon-photonics APA7201020000 APA7201040000 APA7201080000 APA7201120000
Contextual Info: N x 3.125 Gbps Multi-Mode VCSEL Array March 2003 80 µm 105 µm 125 µm Features • 250 µm 850nm wavelength range • High wavelength uniformity rates • Data up to 3.5 Gbps • 980 µm for 1x4 Low threshold current 1980 µm for 1x8 2980 µm for 1x12 • Ordering information

Contextual Info: DATA SHEET 10GBPS 850NM VCSEL ARRAYS HFE8004-103, HFE8012-103 FEATURES: 850nm cathode common VCSEL array Capable of 10Gbps per channel modulation Fully tested and Burned in with STABILAZETM process 1x4 and 1x12 version The HFE80xx-103 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser array die optimized for high-speed data communications.

HFE8004-103

Abstract: VCSEL die bonding VCSEL array common anode VCSEL array, 850nm 10GBPS 850NM HFE8012-103 T-25 laser DFB 1550nm 10mW VCSEL array driver
Contextual Info: DATA SHEET 10GBPS 850NM VCSEL ARRAYS HFE8004-103, HFE8012-103 FEATURES: 850nm cathode common VCSEL array Capable of 10Gbps per channel modulation Fully tested and Burned in with STABILAZETM process 1x4 and 1x12 version The HFE80xx-103 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser array die optimized for high-speed data communications.

VCSEL array common anode

Abstract: VCSEL die bonding VCSEL array, 850nm HFE8012-103 Finisar 1x12 VCSEL
Contextual Info: DATA SHEET 10GBPS 850NM VCSEL ARRAYS HFE8004-103, HFE8012-103 FEATURES: 850nm cathode common VCSEL array Capable of 10Gbps per channel modulation Fully tested and Burned in with STABILAZETM process 1x4 and 1x12 version The HFE80xx-103 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser array die optimized for high-speed data communications.

Finisar 1x12 VCSEL

Abstract: VCSEL array common anode VCSEL array, 850nm
Contextual Info: DATA SHEET 10GBPS 850NM VCSEL ARRAYS HFE8004-103, HFE8012-103 FEATURES: 850nm cathode common VCSEL array Capable of 10Gbps per channel modulation Fully tested and Burned in with STABILAZETM process 1x4 and 1x12 version The HFE80xx-103 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser array die optimized for high-speed data communications.