2,2 NF 10 50V Search Results
2,2 NF 10 50V Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TL1451ACNS |
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3.6V to 50V dual channel controller with Wide input voltage range 16-SO 0 to 0 |
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TPS84250RKGR |
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7V to 50V, 2.5A Step-Down Integrated Power Solution 41-B1QFN -40 to 85 |
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LM34910CSD/NOPB |
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8-50V, 1.25A Constant On-Time Non-Synchronous Buck Regulator 10-WSON -40 to 125 |
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TL1451ACNSR |
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3.6V to 50V dual channel controller with Wide input voltage range 16-SO -20 to 85 |
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TPS7A4101DGNT |
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50V Input, 50mA, Single Output Low-Dropout Linear Regulator 8-MSOP-PowerPAD -40 to 125 |
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2,2 NF 10 50V Price and Stock
2,2 NF 10 50V Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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siemens MKL
Abstract: 210895 B32110f 1.50 MKT - 2200PF - 630V b32110d B32110-F B32110-E B32110 B31531 mkl siemens
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yageo Phycomp 2238
Abstract: Phycomp Components 2238 2238 yageo Phycomp Components PHYCOMP 2222 YAGEO C0603 X7R yageo 2255 Phycomp c0603 PHYCOMP 2222 580 phycomp capacitors X7R 1206 2238
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nF-47 68nF-22 68nF-4 68nF-1 yageo Phycomp 2238 Phycomp Components 2238 2238 yageo Phycomp Components PHYCOMP 2222 YAGEO C0603 X7R yageo 2255 Phycomp c0603 PHYCOMP 2222 580 phycomp capacitors X7R 1206 2238 | |
VEB mikroelektronik
Abstract: mikroelektronik DDR Widerstandsnetzwerke aus dem Kombinat Keramische Werke Hermsdorf VEB Keramische Werke keramische Werke Hermsdorf hermsdorf keramische Werke Hermsdorf 3677 Deutschen Demokratischen Republik Kombinat VEB Keramische Werke DDR Schaltkreise
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WV/6/1-10 VEB mikroelektronik mikroelektronik DDR Widerstandsnetzwerke aus dem Kombinat Keramische Werke Hermsdorf VEB Keramische Werke keramische Werke Hermsdorf hermsdorf keramische Werke Hermsdorf 3677 Deutschen Demokratischen Republik Kombinat VEB Keramische Werke DDR Schaltkreise | |
epcos ceramic capacitor
Abstract: 222 S capacitor date code capacitor
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B37872U5222S011 epcos ceramic capacitor 222 S capacitor date code capacitor | |
EUROFARAD capacitor
Abstract: EUROFARAD 470
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philips blx15Contextual Info: N AMER PHILIPS/DISCRETE b^E ]> • b b S B ' m PDE^S74 bOO « A P X BLX15 _ A H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band: |
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BLX15 7Z67664 philips blx15 | |
siemens spc 2
Abstract: SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67
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de/semiconductor/products/35/35 de/semiconductor/products/35/353 MWP-25 MWP-35 siemens spc 2 SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67 | |
teapo xg-vs
Abstract: 1000uf, 25v electrolytic capacitor teapo xg-vs 250v 10nF 63V Polyester or Ceramic Capacitor 1000uF 25V capacitor Philips Electrolytic Capacitor 400v philips capacitor 47 uF 400V WIMA MKc 4 1000uf 63V electrolytic capacitor ELECTROLYTIC CAPACITORS 220uF 25V
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CCC-13 FL16/20) uF/63V uF/50V 100uF/63V 1000uF/16V uF/25V 220uF/35V 1000uF/35V teapo xg-vs 1000uf, 25v electrolytic capacitor teapo xg-vs 250v 10nF 63V Polyester or Ceramic Capacitor 1000uF 25V capacitor Philips Electrolytic Capacitor 400v philips capacitor 47 uF 400V WIMA MKc 4 1000uf 63V electrolytic capacitor ELECTROLYTIC CAPACITORS 220uF 25V | |
SIEMENS MICROWAVE RADIO 8 GHz
Abstract: gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING
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MWP-25 MWP-35 SIEMENS MICROWAVE RADIO 8 GHz gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING | |
microwave transistor bfy193
Abstract: BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420
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MWP-25 MWP-35 microwave transistor bfy193 BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420 | |
4532m
Abstract: capacitor 100nf 100v 0603 x7r 0603 KR X7R 9BB 1812 footprint 1206 X7R 104 1812 footprint dimension 0805 X7R 104 capacitor 100 nf phycomp capacitors X7R inductor 1812 footprint dimension
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Contextual Info: Roederstein Tantalum Capacitors Dipped 43 Tantalum Electrolytic Capacitors Sintered Anode, Solid Sem iconductor Electrolyte, +125°C Tantalum capacitors with sintered anode arid solid semiconductor electrolyte, with flame retardant fluidized bed coating. The ETPW type is an ideal component |
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valvo handbuch rohren
Abstract: VALVO Handbuch 6922 EH valvo E288CC E81L E180F VALVO GMBH E130L E186F
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roederstein tantalum
Abstract: 70511 roederstein capacitor tantalum Roederstein ZR4040-2.5 LM136-2.5
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7fl21b24 roederstein tantalum 70511 roederstein capacitor tantalum Roederstein ZR4040-2.5 LM136-2.5 | |
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44358
Abstract: 107603 roederstein etqw capacitor tantalum ETQW 002D10 3G2216 Roederstein ELECTROLYTIC CAPACITOR tantalum roederstein tantalum ETQW1 68503
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7fl21b24 44358 107603 roederstein etqw capacitor tantalum ETQW 002D10 3G2216 Roederstein ELECTROLYTIC CAPACITOR tantalum roederstein tantalum ETQW1 68503 | |
capacitor poliester 100nf
Abstract: CAPACITOR 5D 3KV 5d 3kv kje y4 capacitor 100nF poliester Thomson csf ceramic capacitor IEC-384-9 capacitor poliester 10nf Carimbo ceramic capacitor 5OQ322MAEAA
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TPCAM0198 5OKB10 B-1050 capacitor poliester 100nf CAPACITOR 5D 3KV 5d 3kv kje y4 capacitor 100nF poliester Thomson csf ceramic capacitor IEC-384-9 capacitor poliester 10nf Carimbo ceramic capacitor 5OQ322MAEAA | |
V23990-P622-F64-01-14Contextual Info: V23990-P622-F64-PM final data sheet flow0 V23990-P622-F64-01-14 Maximum Ratings Parameter P622-F64 600V/30A Condition Symbol Datasheet values Unit max. Transistor H-bridge MOSFET Drain to source voltage 600 V Id 25 A Idpuls 115 A Pulsed drain current Tj=25°C |
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V23990-P622-F64-PM V23990-P622-F64-01-14 P622-F64 00V/30A V23990-P622F64 V23990-P622-F64-01-14 | |
mosfet power inverterContextual Info: V23990-P622-F74-PM final data sheet flow0 V23990-P622-F74-01-14 Maximum Ratings Parameter P622-F74 600V/30A Condition Symbol Datasheet values Unit max. Transistor H-bridge MOSFET Drain to source voltage 600 V Id 32 A Idpuls 115 A Pulsed drain current Tj=25°C |
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V23990-P622-F74-PM V23990-P622-F74-01-14 P622-F74 00V/30A V23990-P622F74 mosfet power inverter | |
diode hp 2900
Abstract: PBL 386 15/1 SHT 1N4448
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2x900 2x30k. 30/2SOS 30/2SOT 30/2QNS 30/2QNT diode hp 2900 PBL 386 15/1 SHT 1N4448 | |
V23990-P722-F64-PMContextual Info: V23990-P722-F64-PM final data sheet fastPACK 0 H 2nd gen Maximum Ratings / Höchstzulässige Werte Parameter Condition V23990-P722-F64-01-14 P722-F64 600V/30A Symbol Datasheet values Unit max. DC link Capacitor TC=25°C Max.DC voltage UMAX 500 V Vbr 600 V |
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V23990-P722-F64-PM V23990-P722-F64-01-14 P722-F64 00V/30A 64-PM V23990-P722-F64 V23990-P722-F64-PM | |
Contextual Info: May 1999 PBL 386 30/2 Subscriber Line Interface Circuit Description The PBL 386 30/2 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in Digital Loop Carrier, FITL and other telecommunications equipment. The PBL 386 30/2 has been optimized for low total line interface cost and a high |
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2x900 2x30k. 1522-PBL SE-164 | |
Contextual Info: V23990-P722-F74-PM final data sheet fastPACK 0 H 2nd gen Maximum Ratings / Höchstzulässige Werte Parameter Condition V23990-P722-F74-01-14 P722-F74 600V/30A Symbol Datasheet values Unit max. DC link Capacitor TC=25°C Max.DC voltage UMAX 500 V Vbr 600 V |
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V23990-P722-F74-PM V23990-P722-F74-01-14 P722-F74 00V/30A 2-F74-PM V23990-P722F74 | |
Ericsson radio relayContextual Info: Preliminary October 1997 PBL 386 65/1 Subscriber Line Interface Circuit Description Key Features The PBL 386 65/1 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in DLC, Central Office and other telecommunications equipment. The |
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2x900 1522-PBL S-164 Ericsson radio relay | |
Contextual Info: TQP3M9005 LNA Gain Block Applications • • • • Repeaters Mobile Infrastructure LTE / WCDMA General Purpose Wireless 16-pin 3x3 QFN package Product Features • • • • • • • • • • Functional Block Diagram 50-4000 MHz 15.3 dB Gain @ 1.9 GHz |
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TQP3M9005 16-pin TQP3M9005 |