2 N MJE3055 Search Results

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

MJE30*T

Abstract: MJE2955T transistor MJE3055T MJE3055T
Contextual Info: Ill MJE2955T MJE3055T MJE2955T, MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Genera^ Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM A B C D E F G H J K L M N MIN 14.42 9,63

T1P42C

Abstract: bd534j T1P102
Contextual Info: TO-220 PIN CO N FIG U R ATIO N 1. B A S E 2. C O L L E C T O R 3. EM ITTER 4. C O L L E C T O R c ,01 0 -I MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 DIM E A B C D E F G H J K L M N 3 G - 1,15 3,75 2,29 2,54 12,70

T1P42C

Contextual Info: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN

E3055T

Abstract: E2955T e3055 E2955T-MJ E2955T-MJE3055T e2955
Contextual Info: r z T SGS-THOMSON Ä 7 # RSD lS S l[LliSTl^©iBOi MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec T0-220 package. It is intended for power switching circuits and

Contextual Info: MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES • High C urrent G ain-Bandw idth Product f j = 2kHz (MIN ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit VcBO 70 V VcEO 60 V E m itter-Base Voltage

Contextual Info: rz 7 Ä T# SGS-THOMSON MJE2955T MJE3055T [MO gfô l[L[iera®*S COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is

Contextual Info: MJD2955 MJD3055 COMPLEMENTARY SILICON POWER TRANSISTORS . STM PREFERRED SALESTYPES . SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) . ELECTRICAL SIMILAR TO MJE2955 AND MJE3055 APPLICATIONS . GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS

mje3055

Abstract: mje3055 data MJE3055K 2 N MJE3055 transistor MJE3055 MJE3055 TO-126 CASE 90-05 MJE2955K "case 90-05" 1511 BA
Contextual Info: MJE3055 SILICON MJE3055K 10 AMPERE POWER TRANSISTORS HIGH POWER NPN SILICON TRANSISTORS . . . designed for use m general-purpose amplifier and switching applitions. NPN SILICON 6 0 VOLTS 90 WATTS • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product —

JE2955

Abstract: JE3055 mje3055 127 case data MJE295ST MJE2955 JE2955T JE3055T lm 3904 2955T TO-225AB
Contextual Info: MOTOROLA SC 12E 0 | L3b7HS4 □Qâ53Mc1 1 | XSTRS/R F r-3 3 - 5 PN P MOTOROLA r - î î - a i MJE2955, MIE2955T SEMICONDUCTOR NPN TECHNICAL DATA MJE3055, MJE3055T 10 A M P E R E COM PLEM ENTARY SILICO N PLASTIC POWER TRAN SISTO RS . . . designed for use in general-purpose amplifier and switching

Contextual Info: SAMSUNG SEMICONDUCTOR INC 1 14E D I 7 % ^ ^ 0007710 I : t - MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AN6 SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES High C urrent Gain-Bandwidth Product fT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (T«=25°C)

MJE305

Abstract: MJE30*T MJE2955T MJE3055T
Contextual Info: Inchange Semiconductor Product Specification MJE2955T Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type MJE3055T ・DC current gain -hFE = 20–70 @ IC = -4 Adc ・Collector–emitter saturation voltage VCE sat = -1.1 Vdc (Max) @ IC =- 4 Adc

MJE3055T

Contextual Info: MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES • High Current G ain-Bandwidth Product f j = 2kHz (MIN ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol C ollector Base Voltage C ollector-E m itter Voltage

Contextual Info: UNISONICTECHNOLOGIESCO., LTD MJE3055T NPN SILICON TRANSISTOR H I GH V OLT AGE T RAN SI ST OR ̈ DESCRI PT I ON The UTC MJE3055T is designed for general purpose of amplifier and switching applications. Lead-free: MJE3055TL Halogen-free: MJE3055TG ̈ ORDERI N G I N FORM AT I ON

TIP298

Abstract: TIP29 Pj-3000 LE33A OF TRANSISTOR tip30 tip30c TLP298 MJE3055T TIP29A T1P30
Contextual Info: SAMSUNG SEMICONDUCTOR 14E D INC I 7^4142 0007710 t ' : - 0 | 33- 3 NPN SILICON TRANSISTOR MJE3055T GENERAL PURPOSE ANÓ SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES High Current Gain-Bandwidth Product (t TO-220 = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES • High C urrent G ain-Bandw idth Product f j = 2kHz (MIN ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic V cbO

MJE3055

Abstract: KSH3055 Q02S transistor MJE3055 MJE3055 TO-225
Contextual Info: KSH3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I.PACK, I ” Suffix) • Electrically Similar to Popular MJE3055

Contextual Info: MJE2955T PNP , MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS • High Current Gain − Bandwidth Product

MJE3055

Abstract: transistor MJE3055 20100G
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MJE3055 Features • NPN Silicon Plastic-Encapsulate Transistor Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates

pnp mje2955t

Abstract: MJE3055T MJE2955T
Contextual Info: ON Semiconductor PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *ON Semiconductor Preferred Device • DC Current Gain Specified to 10 Amperes

mje2955t

Abstract: mje3055t MJE2955TG MJE305 MJE30*T transistor MJE3055T
Contextual Info: MJE2955T PNP MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS • DC Current Gain Specified to 10 A

Contextual Info: MJE2955T PNP MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS • DC Current Gain Specified to 10 A

MJE3055TG

Abstract: MJE2955TG MJE2955T MJE3055T AN415A MJE3055 MJE305
Contextual Info: MJE2955T PNP MJE3055T (NPN) Preferred Device Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS

MJE2955TG

Abstract: mje3055t
Contextual Info: MJE2955T PNP MJE3055T (NPN) Preferred Device Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. Features http://onsemi.com 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS