2 W RF POWER TRANSISTOR NPN Search Results

NESG270034

Abstract: ic nec 2501 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ 2012 NEC
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz

1005 Ic Data

Abstract: NESG270034
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz

VK200-20-4B

Abstract: MRF5175 choke vk200 VK20020-4B 56590 VK200 FERRITE MRF5175 transistor VK-200-20-4B type 2951 vk200 ferrite bead
Contextual Info: MRF5175 SILICON The RF Line 5 W - 400 M Hz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . designed p rim a rily fo r w ideba nd large-signal d riv e r and predriver a m p lifie r stages in th e 2 00 -60 0 M H z fre q u e n c y range.

e20231

Contextual Info: ERICSSON í E 20231* 18 Watts, 2 . 1 - 2 . 2 GHz Cellular Radio RF Po we r Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 w atts minimum output power in class AB and 8 watts minimum output power

choke vk200

Abstract: VK200 ferrite mrf5174 VK200 r.f choke VK200 ferrite choke Allen Bradley 706 vk200 ferrite bead type 2951 eb 1361 VK200/20-4B
Contextual Info: MRF5174 silicon Tlie RF Line 2 W — 400 M Hz R F POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband iarge-signal driver and predriver amplifier stages in the 200*600 M H z frequency range. • Specified 28*Volt, 400 -M H z Characteristics Output Power - 2.0 Watts

transistor rf m 1104

Abstract: motorola rf Power Transistor motorola rf 1104 Power Transistor SD135 MOTOROLA TRANSISTOR T2 100 mf capacitor Motorola 1N4007 transistor 228 npn motorola motorola rf device MRF641
Contextual Info: MOTOROLA Order this document by MRF6414PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 PHOTOMASTER NPN Silicon RF Power Transistor CASE 333A– 02, STYLE 2 C9 +VCC T2 R1 C8 P1 C5 D1 C7 C6 D2 C4 R2 RF OUTPUT RF INPUT C3 T1 50 W C1 50 W C1, C3 C2, C7

M9409

Abstract: transistor 342 G motorola 2N5643
Contextual Info: MOTOROLA SC XST RS/ R F 4bE D L3 b 7 2 S4 OGIMÜTE 2 MOTOROLA . ' P - 3 3 " 11 • S E M IC O N D U C T O R TECHNICAL DATA 2N5643 The RF Line 40 W - 175 M H z RF POWER TRANSISTOR N P N S IL IC O N NPN SILICO N RF POWER TRANSISTOR designed p rim a rily fo r w id e b a n d large-signal a m p lifie r stages in

Contextual Info: bbSBTBl 003EQA7 Ell Philips Semiconductors Product specification APX BFT24 NPN 2 GHz w ideband transistor N ANER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily Intended for use in RF low power amplifiers, such as in

cm 45-12

Abstract: Mrf621 transistor 1346 420 NPN Silicon RF Transistor VK200 vk200 rf choke
Contextual Info: MRF621 SILICON T h e R F L in e 45 W - 470 M Hz "CONTROLLED Q" RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . .d es ig n e d fo r 1 2 .5 V o l t U H F large-signal a m p lifie r a p p lic a tio n s in industrial and c o m m e rc ia l

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4524 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2 S C 4 5 2 4 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifiers applications Dimensions in mm

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4526 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2 S C 4 5 2 6 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifier applications in Dimensions in mm

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2094 NPN EPITAXIAL PLANAR T Y P E D ESC R IPT IO N O U T LIN E D R A W IN G 2 S C 2 0 9 4 is a silicon N P N epitaxial planar type transistor designed for R F power amplifiers in V H F band mobile radio applications. Dimensions in mm

BLV25

Contextual Info: BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG A C The ASI BLV25 is a 28 V silicon NPN power transistor designed primarily for VHF FM broadcast transmitters. 1 2 2x Ø N FULL R D FEATURES: 3 • 28 V operation • PG = 10 dB at 175 W/108 MHz

BLV25

Contextual Info: BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG A C The ASI BLV25 is a 28 V silicon NPN power transistor designed primarily for VHF FM broadcast transmitters. 2 1 2x Ø N FU LL R D FEATURES: 4 3 • 28 V operation • PG = 1.0 dB at 175 W/108 MHz

Motorola 2N6083

Abstract: sem 2106 2N6083
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3tj?2S4 00^4120 MOTOROLA Ô MOTb T -3 5 ~ u • SEM ICONDUCTOR i TECHNICAL DATA 2N6083 The R F Line 30 W - 175 MHz 2 RF POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTORS . . . designed for 1 2.5 V o lt V H F large-signal am plifier applications

ASI2302

Abstract: ASI10534
Contextual Info: ASI2302 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 2L FLG A The ASI 2302 is Designed for General purpose Class C Power Amplifier Applications up to 3000 MHz. 2 ØD B .060 x 45° CHAMFER 3 C E 1 G FEATURES: L • PG = 9.5 dB min. at 2 W / 2300 MHz

ASI10534

Abstract: ASI2302
Contextual Info: ASI2302 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 2L FLG A The ASI 2302 is Designed for General purpose Class C Power Amplifier Applications up to 2300 MHz. 2 ØD B .060 x 45° CHAMFER 3 C E 1 G FEATURES: L • PG = 9.5 dB min. at 2 W / 2300 MHz

VK200 rfc

Abstract: FERROXCUBE VK200 Arco 403 MRF225 vk200 vk200 rf choke transistor 4040 choke vk200 vk200 choke vk200 rfc with 6 turns
Contextual Info: MRF225 silicon T h e R F Lin e 1.5 W - 2 2 5 M H z RF POWER TRANSISTOR NPN SILICO N RF POWER TRANSISTOR NPN S IL IC O N . . . designed fo r 12.5 V o lt large-signal pow er a m p lifie r app lica tio n s in c o m m u n ic a tio n e q u ip m e n t o p e ra tin g a t 225 M H z. Id e a lly suited

2SC2797

Abstract: SR1FM transistor power 5w NPN EPITAXIAL PLANAR TYPE 175mhz 1w
Contextual Info: • b2»H flE«ï 0017b? ALT M ITSU BISHI RF PO W ER TR A N SISTO R h 2S C 2 797 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2797 is a silicon NPN epitaxial planar type transistor designed for RF broad-band power amplifiers in UHF band. Dim ensions in mm

MRF587

Contextual Info: MRF587 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI MRF587 is Designed for High Linearity Power Amplifier Applications up to 500 MHz. A 45° 1 2 B 3 4 FEATURES: C D • PG = 16 dB Typical at 220 W/500 MHz • Low Noise Figure

420 NPN Silicon RF Transistor

Abstract: gp 735
Contextual Info: UML125B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UML125B is Designed for Class A, B and C Power Amplifiers Operating in the 100 to 500 MHz Military Band. PACKAGE STYLE .400 8L FLG C Emitter - 4 FEATURES: D A B Collector- 2 places FULL R • PG = 7.0 dB Min. at 125 W/400 MHz

HF20-12S

Abstract: ASI10595 20WPEP
Contextual Info: HF20-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF20-12S is Designed for 12.5 V Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. PACKAGE STYLE .380 4L STUD .112x45° A C FEATURES: B E E • PG = 15 dB min. at 20 W/30 MHz

MSC81250M

Contextual Info: MSC81250M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG The ASI MSC81250M is Designed for DME/TACAN Applications up to 1150 MHz. 1 2X B 2 3 G H L 55 V 600 W @ TC ≤ 80 °C TSTG -65 °C to +200 °C θJC 0.2 °C/W M IN IM U M in c h e s / m m

F234

Abstract: 1803 TRANSISTOR equivalent MRF234 JL055 MRF-234
Contextual Info: MRF234 silicon The RF Line 25 W - 90 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTORS . .d e s ig n e d fo r 1 2 .5 V o lt , m id -b a n d NPN SILICON large-signal a m p lifie r a p p li­ c ations in in d u s tria l a n d c o m m e rc ia l F M e q u ip m e n t o p e ra tin g in the