2 WATT RF TRANSISTOR Search Results
2 WATT RF TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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LXMS21NCMH-230 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag |
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LXMSJZNCMH-225 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag |
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GRM-KIT-OVER100-DE-D | Murata Manufacturing Co Ltd | 0805-1210 over100uF Cap Kit |
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LBUA5QJ2AB-828 | Murata Manufacturing Co Ltd | QORVO UWB MODULE |
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LBAA0QB1SJ-295 | Murata Manufacturing Co Ltd | SX1262 MODULE WITH OPEN MCU |
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2 WATT RF TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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WELWYN c21Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT26HW050S Rev. 2, 7/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous |
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AFT26HW050S AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3 7/2013Semiconductor, WELWYN c21 | |
RA07M4047MS
Abstract: rara RA07M4047M
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RA07M4047M RA07M4047MSA 07M4047 400-470MHz RA07M4047MSA 470-MHz RA07M4047MS rara RA07M4047M | |
RA07M1317MS
Abstract: RA07M1317M RF TRANSISTOR 1 WATT 07M1317
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RA07M1317M RA07M1317MSA 07M1317 135-175MHz RA07M1317MSA 175-MHz RA07M1317MS RA07M1317M RF TRANSISTOR 1 WATT 07M1317 | |
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456678 1234566785 345667859 RoHS Compliance , 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8894M is a 3.6-watt RF MOSFET Amplifier |
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889-941MHz RA03M8894M 941-MHz RA03M8894M | |
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456678 1234566789 34566789A RoHS Compliance , 440-520MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4452M is a 7.5-watt RF MOSFET Amplifier |
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234566789A 440-520MHz RA07N4452M 520-MHz RA07N4452M | |
RA07M4452M
Abstract: generator 4.20 mA
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RA07M4452M RA07M4452MSA 07M4452 440-520MHz RA07M4452MSA 520-MHz RA07M4452M generator 4.20 mA | |
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456367 1234563675 345636758 RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier |
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806-870MHz RA03M8087M 870-MHz RA03M8087M | |
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456364 1234563647 345636478 RoHS Compliance , 400-470MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4047M is a 7.5-watt RF MOSFET Amplifier |
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400-470MHz RA07N4047M 470-MHz RA07N4047M | |
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123453637 1234536378 345363789 RoHS Compliance ,68-88MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H0608M is a 7-watt RF MOSFET Amplifier Module |
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68-88MHz RA07H0608M 88-MHz RA07H0608M | |
RA08N1317M
Abstract: RA08N1317M-101
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RA08N1317M 08N1317 135-175MHz RA08N1317M 175-MHz RA08N1317M-101 | |
marking GG
Abstract: RA07H4452M RA07H4452M-101
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RA07H4452M 07H4452 440-520MHz RA07H4452M 520-MHz marking GG RA07H4452M-101 | |
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456678 1234566789 34566789A RoHS Compliance ,440-520MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H4452M is a 7-watt RF MOSFET Amplifier Module |
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234566789A 440-520MHz RA07H4452M 520-MHz RA07H4452M | |
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE 123456678 1234566785 3456678592A 92A OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4452MSA is a 7-watt RF MOSFET Amplifier |
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23456678592A 440-520MHz RA07M4452MSA 520-MHz RA07M4452MSA | |
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123453637 1234536375 345363758 RoHS Compliance ,66-88MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M0608M is a 7-watt RF MOSFET Amplifier Module |
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66-88MHz RA07M0608M 88-MHz RA07M0608M | |
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RA07H3340M-101
Abstract: marking GG RA*3340 RA07H3340M
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RA07H3340M 07H3340 330-400MHz RA07H3340M 400-MHz RA07H3340M-101 marking GG RA*3340 | |
RA07M1317MS
Abstract: C 829 transistor
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135-175MHz RA07M1317MSA 175-MHz RA07M1317MSA RA07M1317MS C 829 transistor | |
RA07H0608M-101
Abstract: RA07H0608M
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RA07H0608M 07H0608 68-88MHz RA07H0608M 88-MHz RA07H0608M-101 | |
RA08H1317
Abstract: RA08H1317M RA08H1317M-101
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RA08H1317M 08H1317 135-175MHz RA08H1317M 175-MHz RA08H1317 RA08H1317M-101 | |
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456673 1234566738 345667389 RoHS Compliance ,330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module |
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330-400MHz RA07H3340M 400-MHz RA07H3340M | |
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE 123456364 1234563645 34563645728 728 OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 400-470MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4047MSA is a 7-watt RF MOSFET Amplifier |
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400-470MHz RA07M4047MSA 470-MHz RA07M4047MSA | |
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456768 1234567689 34567689A RoHS Compliance , 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO DESCRIPTION The RA08H1317M is a 8-watt RF MOSFET Amplifier Module |
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234567689A 135-175MHz RA08H1317M 175-MHz RA08H1317M | |
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456768 1234567689 34567689A RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module |
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234567689A 135-175MHz RA08N1317M 175-MHz RA08N1317M | |
mosfet mttfContextual Info: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 2, 3/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. |
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AFT18S230S AFT18S230SR3 mosfet mttf | |
AFT21S230S
Abstract: aft21s232s C5750X7S2A106M
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AFT21S230S AFT21S230SR3 AFT21S232SR3 aft21s232s C5750X7S2A106M |