Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2.4 GHZ 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM Search Results

    2.4 GHZ 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    2.4 GHZ 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications

    Abstract: ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout amplifiers circuit diagram CGH35015S GaN amplifier GaN photo diode operational amplifier discrete schematic
    Text: From June 2007 High Frequency Electronics Copyright 2007 Summit Technical Media, LLC High Frequency Design WiMAX AMPLIFIERS High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications U. H. Andre, R. S. Pengelly, A. R. Prejs and S. M. Wood, Cree Inc., and


    Original     		PDF

    MRFG35010M

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF RDMRFG35010MT1BWA MRFG35010MT1 MRFG35010M

    smd diode J476

    Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
    Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D smd diode J476 VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF RDMRFG35003MT1BWA MRFG35003MT1

    db14g

    Abstract: CDR33BX104AKWS MRFG35010MT1 T491X226K035AS LL1608-FHN2K 85dBp MRFG35010M
    Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF MRFG35010MT1 MRFG35010MT1 RDMRFG35010MT1BWA db14g CDR33BX104AKWS T491X226K035AS LL1608-FHN2K 85dBp MRFG35010M

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF MRFG35003MT1 MRFG35003MT1 RDMRFG35003MT1BWA

    2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
    Text: PTF 10147 10 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10147 is a 10 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 58% efficiency and 16.5 dB of gain. Nitride surface passivation and full gold metallization


    Original     		PDF P4525-ND P5182-ND 1-877-GOLDMOS 1301-PTF 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    Untitled

    Abstract: No abstract text available
    Text: PTF 10147 GOLDMOS Field Effect Transistor 10 Watts, 1.0 GHz Description • The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold


    Original     		PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF

    G200

    Abstract: 10147
    Text: PTF 10147 10 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold


    Original     		PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF G200 10147

    10147

    Abstract: GE capacitor 2R13-6 G200
    Text: PTF 10147 GOLDMOS Field Effect Transistor 10 Watts, 1.0 GHz Description • The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold


    Original     		PDF P4525 P5182 1-877-GOLDMOS 1522-PTF 10147 GE capacitor 2R13-6 G200

    MRFG35005MT1

    Abstract: CDR33BX104AKWS T491X226K035AS 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM LL-210
    Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF MRFG35005MT1 MRFG35005MT1 RDMRFG35005MT1BWA CDR33BX104AKWS T491X226K035AS 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM LL-210

    LL1608-FHN2K

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF MRFG35005MT1 RDMRFG35005MT1BWA LL1608-FHN2K

    gps transmitter circuit diagram

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this


    Original     		PDF 37nces MRF186) MRF186 31JUL04 31JAN05 MRF186 gps transmitter circuit diagram

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index

    MRF186

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this


    Original     		PDF MRF186/D MRF186 DEVICEMRF186/D

    MRF186

    Abstract: C10B4 motorola MOSFET 935 Z11-Z16 RF power amplifier MHz MRF186 equivalent
    Text: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this


    Original     		PDF MRF186/D 31JAN05 MRF186 31JUL04 MRF186 C10B4 motorola MOSFET 935 Z11-Z16 RF power amplifier MHz MRF186 equivalent

    Untitled

    Abstract: No abstract text available
    Text: Applications • WiMAX, WCDMA, and LTE base station receivers Ultra Low Noise Amplifiers LNAs • WLAN enterprise access point receivers Select LNAs Available from Stock for Prototype or High-Volume Production • GPS receivers Skyworks Solutions offers a select group of ultra low noise, high linearity low noise


    Original     		PDF

    MRF186 equivalent

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF186/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this


    Original     		PDF MRF186/D MRF186 MRF186 MRF186/D MRF186 equivalent

    motorola MOSFET 935

    Abstract: MRF186 transistor motorola 236
    Text: MOTOROLA Order this document by MRF186/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.


    Original     		PDF MRF186/D MRF186 motorola MOSFET 935 MRF186 transistor motorola 236

    MRF186

    Abstract: No abstract text available
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF186/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this


    Original     		PDF MRF186/D MRF186 MRF186

    2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF186 9601 mosfet
    Text: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this


    Original     		PDF MRF186/D 31JAN05 MRF186 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF186 9601 mosfet

    HMC 713

    Abstract: hmc713 Logarithmic Amplifier detector HMC713LP3E Logarithmic Amplifier detector rf power
    Text: HMC713LP3E v01.1009 54 dB, LOGARITHMIC DETECTOR / CONTROLLER, 50 - 8000 MHz Typical Applications Features The HMC713LP3E is ideal for: Wide Dynamic Range: up to 54 dB • Cellular Infrastructure High Accuracy: ±1 dB with 54 dB Range Up To 2.7 GHz • WiMAX, WiBro & LTE/4G


    Original     		PDF HMC713LP3E HMC713LP3E HMC 713 hmc713 Logarithmic Amplifier detector Logarithmic Amplifier detector rf power

    transistor D 1666

    Abstract: PTE10021 bq 726
    Text: E R IC SSO N í PTE 10021* 30 Watts, 1 . 4 - 1 . 6 GHz L D M O S Field Effect Transistor Description The 10021 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applica­ tions in the 1.4 to 1.6 GHz range. It is rated at 30 watts minimum output


    OCR Scan     		PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp