20/600 150 ND1J Search Results

Contextual Info: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF9150 D, R, H 2N7323D, 2N7323R 2N7323H Radiation Hardened P-Channel Power MOSFETs March 1996 Package Features • 23A, -1 00V, rDS(ON) = 0.14 0 ft TO-254AA • Second Generation Rad Hard M O SFET Results From New Design Concepts

TC58257A

Abstract: TC58F1001P 0A000-0AFFF 18XXX EPROM sop 40
Contextual Info: TOSHIBA MOS INTEGRATED CIRCUIT IN T E G R A T E D C IR C U IT T O S H IB A TC 58F1001P/F- 15 , T C 58F 1001P /F -20 T E C H N |CAL D A T A SILICON STACKED GATE MOS TENTATIVE DATA TC58F1001P/F 131.072W ORD x 8BIT CMOS FLASH E2 PROM DESCRIPTION T he TC 58F1001P / F is a 1,048,576 bits, F lash E lectrically Erasable and Programmable Read