20/IGBT FF 450 Search Results

water level controller with ac motor circuit diagram

Abstract: solar inverters circuit diagram eupec igbt 400 A 50Hz sine wave filter circuit eupec igbt water level controller circuit diagram EN60068-2-6 eupec ModSTACK OEA101 3000 watt inverter circuit diagram
Contextual Info: ModSTACK TM Data Sheet: 2B6I 500/800-450W Preliminary Data Key Data 2 x 3 x 450A AC at 500V AC, water cooled General Information Stack with IGBT’s, heatsinks, capacitors, drivers and sensors for several inverter applications. These are only technical data! Please read heedful the complete documentation and attend the

DISC THYRISTOR

Abstract: D170U D1201 D170S single phase bridge rectifier pin configuration "921" Thyristor diode gto EUPEC Thyristor V4500 4500 igbt
Contextual Info: . power the Home Products F-Diode News Contact Editorials GTO Diodes . V RRM = 2500 V 2500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 6000 V 6000 V Company Search Site Content Fast Rectifier Diodes Freewh. Diodes for GCT & IGBT GTO Snubberdiodes part-no.

snubber FOR 3PHASE BRIDGE RECTIFIER

Abstract: EUPEC Thyristor gct thyristor 74x26mm eupec igbt BSM 100 gb FAST HIGH VOLTAGE DIODE 4000 V EUPEC D1201 D1201 D170S eupec phase control thyristor
Contextual Info: . power the Home Products F-Diode News Contact Editorials GTO Diodes . V RRM = 2500 V 2500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 6000 V 6000 V Company Search Site Content Fast Rectifier Diodes Freewh. Diodes for GCT & IGBT GTO Snubberdiodes part-no.

Contextual Info: Target Specification TENTATIVE (450A/1200V-6in1 IGBT Module) IGBT Module This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any

OEA101

Abstract: schiele eupec ModSTACK EN61800-3 TR101 ModSTACK
Contextual Info: ModSTACK Datasheet: B6I 690/1100-375G M, S Preliminary Data Key Data 3 x 375A AC at 690V AC, aircooled, switching frequency max 1000Hz General Information Stack with IGBT, heatsinks, capacitors, drivers and sensors for several inverter applications. These are only technical data! Please read heedful the complete documentation and attend the

eupec igbt FF300R12KE3

Abstract: IGBT FF 300 r12 FF300R12KE3 igbt eupec ff300r12ke3 IGBT FF 300 bsm300gb120 BSM300GB120DLC 250W EN60068-2-6 EN61800-3
Contextual Info: ModSTACK TM Datasheet: B6I 500/800-250W Preliminary Data General Information Stack with IGBT, heatsinks, capacitors, drivers and sensors for several inverter applications. These are only technical data! Please read heedful the complete documentation and attend the

Contextual Info: PD - 5.023B bitemational ^Rectifier CPV363MF Fast IGBT IGBT SIP MODULE Features • • • • Fully isolated printed circuit board mount package Switching-ioss rating includes all "tail" losses HEXFRED soft ultrafast diodes O ptim ized for medium operating frequency 1 to

Contextual Info: PD-5.045 International Iö R Rectifier IGBT SIP MODULE Features CPV362M4K Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 1 0 fis@ 125°C, \feE = 15V • Fully isolated printed circuit board mount package

150RA-060

Abstract: IGBT 6MBP 150 RA 060 30715 fuji ipm 100DC fuji 6mbp
Contextual Info: FUJI IGBT IPM 600V 6MBP 150RA-060 SHÖSGTQSOe 6 x 1 5 0 A Intelligent Power Module R-Series n Maximum Ratings and Characteristics 1A bsolute Maxim um Ratings (i> 2 5 ° c ) Ite m s R a tin g s S y m b o ls V dc 450 D C B us V o lta q e (surqe) 500 D C Bus V o lta g e (short operating)

Contextual Info: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc ICM V ges Ptot Tj, Tstg Visol humidity climate Units 600 600 1 3 0 /1 0 0 1 5 0 /1 5 0 ±20 450 - 4 0 . +150 125) 2500 Class F 40/125/56 Rge = 20 k£^ Toase = 25/70 "C

Contextual Info: HGTP1N120CND, HGT1S1N120CNDS Semiconductor February 1999 Data Sheet 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

IRGKI200F06

Abstract: IGBT FF 300 l200a
Contextual Info: International lü Rectifier PD-9.968C IRGKI200F06 Fast Speed IGBT "CH O PPER “ IGBT INT-A-PAK V CE = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant •Switching-Loss Rating includes all “tail"

20N120C3D

Contextual Info: HGTG20N120C3D Semiconductor October 1998 Data Sheet 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input

30N60A4D

Abstract: TA49373 30N60A4 TA49345 TA49343 hgtp30n60a4d HGTG30N60A4D TIL-220 HGTG*N60A4D la 4830 ic
Contextual Info: i n t e HGTG30N60A4D r r i i J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input

Contextual Info: 7MBP150TEA060 600V / 150A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection

Contextual Info: 7MBP50TEA060 600V / 50A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection

7MBP50TEA060

Abstract: AC200V AC2500 high voltage diode 100 kv TRANSISTOR 15kHZ 30A 300V
Contextual Info: 7MBP50TEA060 600V / 50A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection

Contextual Info: 7MBP150TEA060 600V / 150A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection

Contextual Info: 7MBP50TEA060 600V / 50A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection

7MBP150TEA060

Abstract: AC200V AC2500
Contextual Info: 7MBP150TEA060 600V / 150A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection

20N120C3D

Contextual Info: HGTG20N120C3D S em iconductor Data Sheet 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input

gp20n60

Abstract: transistor fall time MJ10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP20N60U Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

g20n60c3d

Abstract: Transistor No C110 G20N60C g20n60c3d equivalent LG 631 IC TA49178 transistor C110 LG 631 TA49179 HGTG20N60C3D
Contextual Info: HGTG20N60C3D in t e r r ii J a n u a ry . m D ata S h eet 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input

5n120bnd

Abstract: transistor de 1200v 5a TP5N12 HGTG5N120BND HGTP5N120BND
Contextual Info: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Semiconductor J a n u a r y 1999 D ata S h e e t 21 A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high